Maryland's Defense Patent Database

The defense community in Maryland is an R&D powerhouse.

Use this database to see the innovative patents that are poised for commercialization.

Spinel ceramics via edge bonding

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Disclosed herein is a method for making transparent ceramic spinel windows, domes and other complex shapes via edge bonding.

Inventors: 
Sanghera, Jasbinder S.; Bayya, Shyam S.; Villalobos, Guillermo R.; Aggarwal, Ishwar D.; Miklos, Robert E.
Patent Number: 
US8652281
Technical domain: 
Materials and Coatings
FIle Date: 
2012-01-19
Grant Date: 
2014-02-18
Grant time: 
761 days
Grant time percentile rank: 
13
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Thioacetate deprotection

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A method of thioacetate deprotection by providing a compound of the formula R1—S—CO—R2, and reacting the compound with a quaternary ammonium cyanide salt in the presence of a protic solvent in an inert atmosphere to convert the compound to a product of the formula R1—SH. R1 is an organic group in which the bonding to sulfur is through a saturated carbon, and R2 is an aliphatic group.

Inventors: 
Holmes, Brian T.; Snow, Arthur W.
Patent Number: 
US7173156
Technical domain: 
Materials and Coatings
FIle Date: 
2006-04-10
Grant Date: 
2007-02-06
Grant time: 
302 days
Grant time percentile rank: 
5
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices

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Methods for producing a junction termination extension surrounding the edge of a cathode or anode junction in a semiconductor substrate, where the junction termination extension has a controlled arbitrary lateral doping profile and a controlled arbitrary lateral width, are provided. A photosensitive material is illuminated through a photomask having a pattern of opaque and clear spaces therein, the photomask being separated from the photosensitive material so that the light diffuses before striking the photosensitive material. After processing, the photosensitive material so exposed produces a laterally tapered implant mask. Dopants are introduced into the semiconductor material and follow a shape of the laterally tapered implant mask to create a controlled arbitrary lateral doping profile and a controlled lateral width in the junction termination extension in the semiconductor.

Inventors: 
Imhoff, Eugene A.; Kub, Francis J.; Hobart, Karl D.
Patent Number: 
US7759186
Technical domain: 
Materials and Coatings
FIle Date: 
2009-07-06
Grant Date: 
2010-07-20
Grant time: 
379 days
Grant time percentile rank: 
6
Claim count percentile rank: 
7
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Trifluoromethylcarbinol terminated thiols

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A compound having the formula CF3—CH(OH)—CH2—(L)n—CH2—SH or a disulfide thereof. Each L is substituted or unsubstituted methylene, substituted or unsubstituted oxyalkylene, and alkyl-substituted or unsubstituted siloxanylene. The compound is free of carboxysilane linkages. The value of n is a positive integer. A metal surface having the group CF3—CH(OH)—CH2—(L)n—CH2—S— bound thereto. A method of making CF3—CH(OH)—CH2—(L)n—CH2—SH by: reacting OHC—CH2—(L)n—CH2—X with (trifluoromethyl)trialkylsilane to form CF3—CH(OH)—CH2—(L)n—CH2—X; reacting the intermediate with a thiocarbonyl compound to form an adduct; and hydrolyzing the adduct followed by protonation. X is a halogen.

Inventors: 
Wynne, James H.; Snow, Arthur W.
Patent Number: 
US7189867
Technical domain: 
Materials and Coatings
FIle Date: 
2006-09-19
Grant Date: 
2007-03-13
Grant time: 
175 days
Grant time percentile rank: 
3
Claim count percentile rank: 
8
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis and polymerization of oligomeric divinyl-terminated aromatic ether-containing resins

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An oligomer having the formula: Ar1 and Ar2 are each an aromatic group or a bisphenol residue. At least one of Ar1 and Ar2 is the aromatic group. The value of m is zero or one, and n is a positive integer. A polymer made by reacting the above oligomer with a crosslinker having at least two silyl hydrogen atoms. A method of: reacting a compound having the formula: with vinyl(dimethylchloro)silane to form the above oligomer. T is —OH, —Br, or —I.

Inventors: 
Laskoski, Matthew; Keller, Teddy M.
Patent Number: 
US7723420
Technical domain: 
Materials and Coatings
FIle Date: 
2008-07-25
Grant Date: 
2010-05-25
Grant time: 
669 days
Grant time percentile rank: 
12
Claim count percentile rank: 
7
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Mobile self-spreading biocides

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A compound having the formula: Each R1 is C1-C3 alkyl group or fluoridated C1-C3 alkyl group. The value n is a positive integer. Each R2 is alkylene group or polyethylene glycol group. Y1 is hydrogen, quaternary ammonium-containing group, or phenol-containing group. Y2 is quaternary ammonium-containing group or phenol-containing group. The quaternary ammonium-containing group is non-aromatic and contains no more than one quaternary ammonium.

Inventors: 
Wynne, James H.; Lloyd, Christopher T.; Buckley, Joseph P.; Pant, Ramesh R.; Rasley, Brian T.
Patent Number: 
US7741503
Technical domain: 
Materials and Coatings
FIle Date: 
2007-05-16
Grant Date: 
2010-06-22
Grant time: 
1,133 days
Grant time percentile rank: 
20
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Fluoroalkyl carbinol generating silane surface treatment agents

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The compound is a silane surface treatment agent and is useful for modifying the surfaces of silicon oxide and other metal oxides with hexafluorodimethyl carbinol functional groups. Additionally provided is a surface treatment procedure that effectively bonds it and other alkoxysilanes via homogeneous and heterogeneous amine catalysis onto metal oxide surfaces.

Inventors: 
Snow, Arthur W.; Foos, Edward E.
Patent Number: 
US7750174
Technical domain: 
Materials and Coatings
FIle Date: 
2007-10-12
Grant Date: 
2010-07-06
Grant time: 
998 days
Grant time percentile rank: 
18
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polymerizable sulfonate ionic liquids and liquid polymers therefrom

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Disclosed is a new ionic liquid monomer salt and methods of is synthesis and polymerization. The ionic liquid monomer salt is prepared by mixing equimolar amounts of an amine, such as tris[2-(2-methoxyethoxy)-ethyl]amine and an acid functionalized polymerizable monomer, such as 2-acrylamido-2-methyl-1-propanesulfonic acid (AMPS), which is stirred at ambient temperature until salt formation is complete. Also disclosed is a new ionic liquid polymer salts and method for making the same. The synthesis of AMPS-ammonium salt polymer is accomplished by adding 2,2′-azobisisobutyronitrile (AIBN) to the ionic liquid monomer salt and heating the homogeneous melt at 70° C. for 18 hr.

Inventors: 
Ricks-laskoski, Holly L.; Snow, Arthur W.
Patent Number: 
US7858822
Technical domain: 
Materials and Coatings
FIle Date: 
2010-08-24
Grant Date: 
2010-12-28
Grant time: 
126 days
Grant time percentile rank: 
2
Claim count percentile rank: 
1
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of difunctional oxyethylene-based compounds

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A method of reacting a toluenesulfonyl-terminated polyoxyethylene compound having the formula CH3—C6H4—SO2—(O—CH2—CH2)n—O—R1 with an ammonium salt having the formula NR24X to form a compound having the formula X—CH2—CH2—(O—CH2—CH2)n-1—R3. The value n is a positive integer. X is a halogen, cyanide, cyanate, thiocyanate, or azide. R1 is a terminating group. Each R2 is hydrogen or an alkyl group. —R3 is —O—R1 or —X.

Inventors: 
Holmes, Brian T.; Snow, Arthur W.
Patent Number: 
US7923584
Technical domain: 
Materials and Coatings
FIle Date: 
2009-01-23
Grant Date: 
2011-04-12
Grant time: 
809 days
Grant time percentile rank: 
14
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polyarylacetylenes containing siloxane, silane, and carborane moieties

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Disclosed herein are the compounds shown below. Each R is an organic group, Cb is a carborane group, and —C6H4— is phenylene. The value of each m is a nonnegative integer, q is 0 or 1, with the proviso that if q is 0 then m is 0 or 1, p is a positive integer, r is a positive integer, and n is an integer greater than or equal to 10. Also disclosed are methods of making and crosslinking the compounds. —{SiR2—([O]q—SiR2)m-[Cb-SiR2—([O]q—SiR2)m]p—C≡C—C6H4—C≡C}— —{SiR2—(O—SiR2)m—C≡C—C6H4—C≡C}n—; —{SiR2—([O]q—SiR2)m—[C≡C—C6H4—C≡C—SiR2—([O]q—SiR2)m]p-Cb-[SiR2—([O]q—SiR2)m-Cb]r}-

Inventors: 
Kolel-veetil, Manoj K.; Keller, Teddy M.
Patent Number: 
US8217194
Technical domain: 
Materials and Coatings
FIle Date: 
2011-06-10
Grant Date: 
2012-07-10
Grant time: 
396 days
Grant time percentile rank: 
7
Claim count percentile rank: 
5
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polyarylacetylenes containing siloxane, silane, and carborane moieties

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Disclosed herein are the compounds shown below. Each R is an organic group, Cb is a carborane group, and —C6H4— is phenylene. The value of each m is a nonnegative integer, q is 0 or 1, with the proviso that if q is 0 then m is 0 or 1, p is a positive integer, r is a positive integer, and n is an integer greater than or equal to 10. Also disclosed are methods of making and crosslinking the compounds —{SiR2—([O]q—SiR2)m-[Cb-SiR2—([O]q—SiR2)m]p—C≡C—C6H4—C≡C}— —{SiR2—(O—SiR2)m—C≡C—C6H4—C≡C}n—; —{SiR2—([O]q—SiR2)m—[C≡C—C6H4—SiR2—([O]q—SiR2)m]p-Cb-[SiR2—([O]q—SiR2)m-Cb]r}-.

Inventors: 
Kolel-veetil, Manoj K.; Keller, Teddy M.
Patent Number: 
US8269030
Technical domain: 
Materials and Coatings
FIle Date: 
2012-03-29
Grant Date: 
2012-09-18
Grant time: 
173 days
Grant time percentile rank: 
3
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polyureas made from aminocrotonates and enaminones

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A polymer made by reacting a polyisocyanate with a compound having the formula below. R1 is an organic group. R2 is an aliphatic group or oxyaliphatic group. R3 is an aliphatic group. The reaction forms urea groups from the isocyanate groups of the polyisocyanate and the NH groups of the compound.

Inventors: 
Verborgt, Jozef; Webb, Arthur A.
Patent Number: 
US8710170
Technical domain: 
Materials and Coatings
FIle Date: 
2009-05-13
Grant Date: 
2014-04-29
Grant time: 
1,812 days
Grant time percentile rank: 
33
Claim count percentile rank: 
4
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Hexafluorodimethylcarbinol terminated alkane- and alkenethiols

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A hexafluorodimethylcarbinol terminated compound, method of making it, and a composition of matter are disclosed. The compound may have the formula (CF3)2C(OH)-L-M-R. The substructure L may be selected from an optionally substituted propenylene group (—CH2CH═CH—) and trimethylene group (—CH2CH2CH2—). The substructure M may be selected from a substituted or unsubstituted methylene chain, a substituted or unsubstituted oxyalkylene chain, and a silicon-containing chain or combination thereof. In one embodiment, M may be selected from —(CH2)n—, —(OCH2CH2)m—, and —(Si(CH3)2O)p—Si(CH3)2—(CH2)q—, wherein n is at least 1, e.g., n is up to 10, m can be at least 1, e.g., m is up to 10, p can be 0 and in one embodiment is from 1 to 10, and wherein q can be 1 and in one embodiment is from 1 to 12. The substructure R represents one of a halogen, —SH, —SZ, —S—S-M-L-C(CF3)2(OH), wherein Z represents a thiol protecting group.

Inventors: 
Snow, Arthur W.
Patent Number: 
US8816116
Technical domain: 
Materials and Coatings
FIle Date: 
2013-12-23
Grant Date: 
2014-08-26
Grant time: 
246 days
Grant time percentile rank: 
4
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Acetylene and diacetylene compounds of transition metals

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A compound having the moiety M-[(C≡C)n-M′]m. Each M and each M′ is a transition metal. Each n is 1 or 2, and m is 2 or more. A method of reacting a transition metal halide with 1,2-dilithioacetylene or 1,4-dilithiodiacetylene to form a transition metal compound.

Inventors: 
Kolel-veetil, Manoj K.; Keller, Teddy M.
Patent Number: 
US8957234
Technical domain: 
Materials and Coatings
FIle Date: 
2014-03-07
Grant Date: 
2015-02-17
Grant time: 
347 days
Grant time percentile rank: 
6
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Preparation of graphitic C3N3P material

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A new graphitic material has the empirical formula C3N3P and comprises triazine rings bound together by phosphorus atoms, and/or other 5- or 6-membered rings with various carbon, nitrogen, and phosphorous connectivity. The material is made by polymerizing P(CN)3, for example by using a temperature of at least 220° C. and an elevated pressure, optionally as high as 1500° C. and 12 GPa.

Inventors: 
Epshteyn, Albert; Yonke, Brendan; Strobel, Timothy; Gou, Huiyang
Patent Number: 
US9409936
Technical domain: 
Materials and Coatings
FIle Date: 
2015-08-06
Grant Date: 
2016-08-09
Grant time: 
369 days
Grant time percentile rank: 
6
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Chemically stable visible light photoemission electron source

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A method of producing electrons via photoemission comprising providing diamond doped p-type with boron, treating a surface of the diamond by exposing it to atomic hydrogen inside an ultrahigh vacuum chamber, illuminating the surface with photons, and extracting the photoemitted electrons. A chemically stable visible light photoemission electron source comprising a diamond film having a surface terminated with hydrogen and a light source.

Inventors: 
Shaw, Jonathan L.; Hanna, Jeremy
Patent Number: 
US9421738
Technical domain: 
Materials and Coatings
FIle Date: 
2014-06-16
Grant Date: 
2016-08-23
Grant time: 
799 days
Grant time percentile rank: 
14
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Hexafluorodimethylcarbinol terminated alkane- and alkenethiols

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A hexafluorodimethylcarbinol terminated compound, method of making it, and a composition of matter are disclosed. The compound may have the formula (CF3)2C(OH)-L-M-R. The substructure L may be selected from an optionally substituted propenylene group (—CH2CH═CH—) and trimethylene group (—CH2CH2CH2—). The substructure M may be selected from a substituted or unsubstituted methylene chain, a substituted or unsubstituted oxyalkylene chain, and a silicon-containing chain or combination thereof. In one embodiment, M may be selected from —(CH2)n—, —(OCH2CH2)m—, and —(Si(CH3)2O)p—Si(CH3)2— (CH2)q—, wherein n is at least 1, e.g., n is up to 10, m can be at least 1, e.g., m is up to 10, p can be 0 and in one embodiment is from 1 to 10, and wherein q can be 1 and in one embodiment is from 1 to 12. The substructure R represents one of a halogen, —SH, —SZ, —S—S-M-L-C(CF3)2(OH), wherein Z represents a thiol protecting group.

Inventors: 
Snow, Arthur W.
Patent Number: 
US8957253
Technical domain: 
Materials and Coatings
FIle Date: 
2014-07-17
Grant Date: 
2015-02-17
Grant time: 
215 days
Grant time percentile rank: 
3
Claim count percentile rank: 
1
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polyureas made from aminocrotonates

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A polymer made by reacting a polyisocyanate with a compound having the formula below. R1 is an organic group. R2 is an aliphatic group. R3 is an aliphatic group. The polyisocyanate reactants are at least 50 mol % aromatic polyisocyanates. The reaction forms urea groups from the isocyanate groups of the polyisocyanate and the NH groups of the compound.

Inventors: 
Verborgt, Jozef; Webb, Arthur A.
Patent Number: 
US9051489
Technical domain: 
Materials and Coatings
FIle Date: 
2014-04-29
Grant Date: 
2015-06-09
Grant time: 
406 days
Grant time percentile rank: 
7
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Electrically conducting oligo(pyrazoles)

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This disclosure concerns two novel electrically conducting organic oligomers: oligo(3-amino-1H-pyrazole-4-carbonitrile) or “oligo(AP-CN)” and oligo(4-nitro-1H-pyrazole-3-yl-amine) or “oligo(AP-NO2)”, and methods of making thereof.

Inventors: 
Martin, Brett D.; Trammell, Scott A.; Deschamps, Jeffrey R.; Naciri, Jawad; Depriest, Jeffrey C.
Patent Number: 
US9302995
Technical domain: 
Materials and Coatings
FIle Date: 
2014-05-16
Grant Date: 
2016-04-05
Grant time: 
690 days
Grant time percentile rank: 
12
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Multifunctional self-decontaminating surface coating

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A coating having an adhesive hydrophilic polymer and an amphiphilic additive. The amphiphilic additive has a hydrophilic chain, a biocidal functional group bonded to the hydrophilic chain, and a hydrophobic moiety bonded to the hydrophilic chain or to the biocidal functional group. A method of forming a biocidal surface by providing an article, and coating the article with the above coating. A compound having the formula: Y—(O—CH2—CH2)n—R—(CH2)m—CH3. Y is CH3 or H. R is X is a halogen, and m and n are independently selected positive integers.

Inventors: 
Wynne, James H.; Jones-meehan, Joanne M.; Snow, Arthur W.; Buckley, Leonard J.
Patent Number: 
US7452951
Technical domain: 
Materials and Coatings
FIle Date: 
2008-01-08
Grant Date: 
2008-11-18
Grant time: 
315 days
Grant time percentile rank: 
5
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Multifunctional self-decontaminating surface coating

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A coating having an adhesive hydrophilic polymer and an amphiphilic additive. The amphiphilic additive has a hydrophilic chain, a biocidal functional group bonded to the hydrophilic chain, and a hydrophobic moiety bonded to the hydrophilic chain or to the biocidal functional group. A method of forming a biocidal surface by providing an article, and coating the article with the above coating. A compound having the formula: Y—(O—CH2—CH2)n—R—(CH2)m—CH3. Y is CH3 or H. R is X is a halogen, and m and n are independently selected positive integers.

Inventors: 
Wynne, James H.; Jones-meehan, Joanne M.; Snow, Arthur W.; Buckley, Leonard J.
Patent Number: 
US8436083
Technical domain: 
Materials and Coatings
FIle Date: 
2008-01-07
Grant Date: 
2013-05-07
Grant time: 
1,947 days
Grant time percentile rank: 
35
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Highly aromatic compounds and polymers as precursors to carbon nanotube and metal nano particle compositions shaped solids

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A method of making metal nanoparticles and carbon nanotubes is disclosed. A mixture of a transition metal compound and an aromatic polymer, a precursor of an aromatic polymer, or an aromatic monomer is heated to form a metal nanoparticle composition, optionally containing carbon nanotubes.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew
Patent Number: 
US9085720
Technical domain: 
Materials and Coatings
FIle Date: 
2010-10-25
Grant Date: 
2015-07-21
Grant time: 
1,730 days
Grant time percentile rank: 
31
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Direct to-metal and exterior durable non-skid coating

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A non-skid coating described herein attempts to overcome the deficiencies of the conventional coatings with improved external durability and color retention, a reduced level of VOCs, and direct-to-metal (DTM) adhesion using organo-siloxane chemistry. The non-skid coating has a first component having an amino-functional siloxane resin; a second component having a non-aromatic epoxy resin; a spherical filler for lowering viscosity; a pigment; a coarse aggregate; and a thixotropic agent. The amino-functional siloxane resin can be an amino-functional methyl phenyl polysiloxane, diphenyl polysiloxane or silsesquioxane-based resin. The non-aromatic epoxy resin can be cycloaliphatic or aliphatic. The first component is about 5% to 20% weight of the coating, and the second component is about 80% to 95% weight of the coating.

Inventors: 
Iezzi, Erick B.; Martin, James R.; Slebodnick, Paul
Patent Number: 
US9006307
Technical domain: 
Materials and Coatings
FIle Date: 
2010-09-22
Grant Date: 
2015-04-14
Grant time: 
1,665 days
Grant time percentile rank: 
30
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Highly aromatic compounds and polymers as precursors to carbon nanotube and metal nanoparticle compositions in shaped solids

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A method of making metal nanoparticles and carbon nanotubes is disclosed. A mixture of a transition metal compound and an aromatic polymer, a precursor of an aromatic polymer, or an aromatic monomer is heated to form a metal nanoparticle composition, optionally containing carbon nanotubes.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew
Patent Number: 
US9017445
Technical domain: 
Materials and Coatings
FIle Date: 
2012-11-19
Grant Date: 
2015-04-28
Grant time: 
890 days
Grant time percentile rank: 
16
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of metal nanoparticle compositions from metallic and ethynyl compounds

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A process of making metal nanoparticles comprising the steps of: providing a precursor composition comprising at least one metallic compound and at least one organic compound; wherein the organic compound is selected from the group consisting of an ethynyl compound, a metal-ethynyl complex, and combinations thereof; wherein the precursor composition is a liquid or solid at room temperature; and heating the precursor composition under conditions effective to produce metal nanoparticles. A metal nanoparticle composition comprising metal nanoparticles dispersed homogenously in a matrix selected from the group consisting of ethynyl polymer, crosslinked ethynyl polymer, amorphous carbon, carbon nanotubes, carbon nanoparticles, graphite, and combinations thereof.

Inventors: 
Keller, Teddy M.; Qadri, Syed B.
Patent Number: 
US7374597
Technical domain: 
Materials and Coatings
FIle Date: 
2004-06-24
Grant Date: 
2008-05-20
Grant time: 
1,426 days
Grant time percentile rank: 
26
Claim count percentile rank: 
1
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Low loss visible-IR transmitting glass-ceramic spinel composites and process

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This invention pertains to a composite of Spinel and BGG glass substrates and to process for bonding Spinel to BGG glass. The composite includes a Spinel and a BGG glass bonded together and having transmission in the visible and mid-infrared wavelength region. The process includes the step of heating them together above the softening temperature of the BGG glass, the composite having excellent, i.e., typically in excess of about 80%, transmission in the 0.5-5 wavelength region.

Inventors: 
Bayya, Shyam S.; Sanghera, Jasbinder S.; Villalobos, Guillermo; Chin, Geoffrey; Aggarwal, Ishwar D.
Patent Number: 
US7670685
Technical domain: 
Materials and Coatings
FIle Date: 
2005-10-13
Grant Date: 
2010-03-02
Grant time: 
1,601 days
Grant time percentile rank: 
29
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Magnesium aluminate transparent ceramic having low scattering and absorption loss

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A ceramic having at least about 90% by weight magnesium aluminate and having a bulk scattering and absorption loss of less than about 1/cm at any wavelength in a range of about 0.23 to about 5.3 microns or 0.2/cm at any wavelength in a range of about 0.27 to about 4.5 microns. A method of making a ceramic by providing a plurality of particles having a magnesium aluminate core and a fluoride salt coating; heating the particles in an oxidizing atmosphere to a temperature in the range of about 400° C. to about 750° C.; and sintering the particles to form a solid ceramic.

Inventors: 
Villalobos, Guillermo R.; Sanghera, Jasbinder S.; Bayya, Shyam S.; Aggarwal, Ishwar D.
Patent Number: 
US7875311
Technical domain: 
Materials and Coatings
FIle Date: 
2009-04-06
Grant Date: 
2011-01-25
Grant time: 
659 days
Grant time percentile rank: 
12
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Hot-pressed transparent ceramics and ceramic lasers

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A transparent polycrystalline ceramic having scattering and absorption loss less than 0.2/cm over a region comprising more than 95% of the originally densified shape and further provides a process for fabricating the same by hot pressing. The ceramic can be any suitable ceramic such as yttria (Y2O3) or scandia (Sc2O3) and can have a doping level of from 0 to 20% and a grain size of greater than 30 μm, although the grains can also be smaller than 30 μm. In a process for making a transparent polycrystalline ceramic in accordance with the present invention, ceramic nanoparticles can be coated with a sintering aid to minimize direct contact of adjacent ceramic powder particles and then baked at high temperatures to remove impurities from the coated particles. The thus-coated particles can then be densified by hot pressing into the final ceramic product. The invention further provides a transparent polycrystalline ceramic solid-state laser material and a laser using the hot pressed polycrystalline ceramic.

Inventors: 
Sanghera, Jasbinder S.; Villalobos, Guillermo R.; Kim, Woohong; Bayya, Shyam S.; Aggarwal, Ishwar D.; Sadowski, Bryan
Patent Number: 
US8105509
Technical domain: 
Materials and Coatings
FIle Date: 
2009-11-18
Grant Date: 
2012-01-31
Grant time: 
804 days
Grant time percentile rank: 
14
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Carbon nanotube fibers/filaments formulated from metal nanoparticle catalyst and carbon source

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NRL

Disclosed is a method of: providing a mixture of a polymer or a resin and a transition metal compound, producing a fiber from the mixture, and heating the fiber under conditions effective to form a carbon nanotube-containing carbonaceous fiber. The polymer or resin is an aromatic polymer or a precursor thereof and the mixture is a neat mixture or is combined with a solvent. Also disclosed are a carbonaceous fiber or carbonaceous nanofiber sheet having at least 15 wt. % carbon nanotubes, a fiber or nanofiber sheet having the a polymer or a resin and the transition metal compound, and a fiber or nanofiber sheet having an aromatic polymer and metal nanoparticles.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew
Patent Number: 
US8277534
Technical domain: 
Materials and Coatings
FIle Date: 
2011-02-04
Grant Date: 
2012-10-02
Grant time: 
606 days
Grant time percentile rank: 
11
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Formation of silicon carbide-silicon nitride nanoparticle carbon compositions

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NRL

A composition having nanoparticles of silicon carbide and a carbonaceous matrix or silicon matrix. The composition is not in the form of a powder. A composition having silicon and an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining silicon and the organic compound and heating to form silicon carbide or silicon nitride nanoparticles.

Inventors: 
Keller, Teddy M.; Saab, Andrew; Laskoski, Matthew; Qadri, Syed B.
Patent Number: 
US8778488
Technical domain: 
Materials and Coatings
FIle Date: 
2013-03-11
Grant Date: 
2014-07-15
Grant time: 
491 days
Grant time percentile rank: 
8
Claim count percentile rank: 
9
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Refractory metal ceramics and methods of making thereof

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NRL

A composition having nanoparticles of a refractory-metal carbide or refractory-metal nitride and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising a metal component and an organic component. The metal component is nanoparticles or particles of a refractory metal or a refractory-metal compound capable of decomposing into refractory metal nanoparticles. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining particles of a refractory metal or a refractory-metal compound capable of reacting or decomposing into refractory-metal nanoparticles with an organic compound having a char yield of at least 60% by weight to form a precursor mixture.

Inventors: 
Keller, Teddy M.; Saab, Andrew; Laskoski, Matthew; Kolel-veetil, Manoj K.; Qadri, Syed B.
Patent Number: 
US8822023
Technical domain: 
Materials and Coatings
FIle Date: 
2013-01-25
Grant Date: 
2014-09-02
Grant time: 
585 days
Grant time percentile rank: 
10
Claim count percentile rank: 
11
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Preparation of nanopowders of reactive metals via reduction under sonication

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NRL

A nanopowder and a method of making are disclosed. The nanopowder may be in the form of nanoparticles with an average size of less than about 200 nm and contain a reactive transition metal, such as hafnium, zirconium, or titanium. The nanopowder can be formed in a liquid under sonication by reducing a halide of the transition metal.

Inventors: 
Epshteyn, Albert; Purdy, Andrew P.
Patent Number: 
US9108247
Technical domain: 
Materials and Coatings
FIle Date: 
2014-05-16
Grant Date: 
2015-08-18
Grant time: 
459 days
Grant time percentile rank: 
8
Claim count percentile rank: 
1
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Silicon carbide synthesis from agricultural waste

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NRL

This disclosure concerns a method of making silicon carbide involving adding one from the group of rice husk material, sorghum, peanuts, maple leaves, and/or corn husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC).

Inventors: 
Qadri, Syed B.; Fliflet, Ame W.; Iman, Ashraf M.; Rath, Bhakta B.; Gorzkowski III, Edward P.
Patent Number: 
US9051186
Technical domain: 
Materials and Coatings
FIle Date: 
2013-03-08
Grant Date: 
2015-06-09
Grant time: 
823 days
Grant time percentile rank: 
15
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Metal nanoparticle thermoset and carbon compositions from mixtures of metallocene-aromatic-acetylene compounds

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NRL

The present invention provides for a composition comprising: a composition formed by heating to a temperature of from about 300° C. and above a mixture of:an organometallic composition and an aromatic-acetylene containing compound; andwherein said organometallic composition comprises the formula: wherein A is selected from the group consisting of H, and wherein M is a metal;wherein Rx and Ry are independently selected from the group consisting of an aromatic, a substituted aromatic group and combinations thereof;wherein m, s and z are ≧0;wherein m and s are independently determined in each repeating unit;wherein said aromatic-acetylene containing composition is 1,2,4,5-tetrakis(phenylethynyl)benzene, 1,2,4-tris(phenylethynyl)benzene or 1,3,5-tris(phenylethynyl)benzene; andwherein said organometallic composition and said aromatic-acetylene composition are molar mix proportions of between 1 and 99 of said organometallic composition and between 99 and 1 of said aromatic-acetylene composition.

Inventors: 
Keller, Teddy M.; Perrin, Joseph; Qadri, Syed B.
Patent Number: 
US6884861
Technical domain: 
Materials and Coatings
FIle Date: 
2001-12-10
Grant Date: 
2005-04-26
Grant time: 
1,233 days
Grant time percentile rank: 
22
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Capacitive based sensing of molecular adsorbates on the surface of single wall nanotubes

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NRL

A sensing device having: a bottom electrode, a dielectric on the bottom electrode, a grid of nanoelectrodes on the dielectric, and a top electrode in electrical contact with the grid. A method of chemical or biological sensing comprising: providing a grid of nanoelectrodes; exposing the grid to fluid suspected of containing a chemical or biological analyte; and measuring a change in the capacitance and conductance of the grid.

Inventors: 
Snow, Eric S.; Perkins, Keith F.; Houser, Eric; Stepnowski, Stan V.; Mcgill, Andrew R.
Patent Number: 
US7776269
Technical domain: 
Materials and Coatings
FIle Date: 
2005-09-27
Grant Date: 
2010-08-17
Grant time: 
1,785 days
Grant time percentile rank: 
32
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

High aspect ratio microelectrode arrays

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NRL

A method of electroplating a metal into a plurality of channels within an insulating material includes mounting the material to a cathode; placing the cathode into an electroplating solution containing the metal; placing an anode into the electroplating solution; connecting the cathode and the anode to a power supply; controlling operation of the power supply to provide a beginning current density during deposition at the insulating material and initiating electroplating of the metal within the plurality of channels starting at one face of the insulating material; and controlling operation of the power supply to provide a final current density during deposition at the insulating material and ending electroplating of the metal within the plurality of channels at the other face of the insulating material. The final current density is larger than the beginning current density, and the beginning current density is maintained at a level for a sufficient time to substantially prevent bubble formation during the electroplating.

Inventors: 
Merritt, Charles; Justus, Brian
Patent Number: 
US7465661
Technical domain: 
Materials and Coatings
FIle Date: 
2003-05-28
Grant Date: 
2008-12-16
Grant time: 
2,029 days
Grant time percentile rank: 
37
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method of growing group III nitride crystals

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NRL

This disclosure pertains to a process for making single crystal Group III nitride, particularly gallium nitride, at low pressure and temperature, in the region of the phase diagram of Group III nitride where Group III nitride is thermodynamically stable comprises a charge in the reaction vessel of (a) Group III nitride material as a source, (b) a barrier of solvent interposed between said source of Group III nitride and the deposition site, the solvent being prepared from the lithium nitride (Li3N) combined with barium fluoride (BaF2), or lithium nitride combined with barium fluoride and lithium fluoride (LiF) composition, heating the solvent to render it molten, dissolution of the source of GaN material in the molten solvent and following precipitation of GaN single crystals either self seeded or on the seed, maintaining conditions and then precipitating out.

Inventors: 
Feigelson, Boris N.; Henry, Richard L.
Patent Number: 
US8449672
Technical domain: 
Materials and Coatings
FIle Date: 
2008-04-25
Grant Date: 
2013-05-28
Grant time: 
1,859 days
Grant time percentile rank: 
34
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Tracking carbon to silicon ratio <i>in situ </i>during silicon carbide growth

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NRL

A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and correlating a partial pressure of a carbon species in the exhaust gases to a carbon:silicon ratio in the chamber.

Inventors: 
Vanmil, Brenda L.; Lew, Kok-keong; Myers-ward, Rachael L.; Eddy Jr., Charles R.; Gaskill, David Kurt
Patent Number: 
US8603243
Technical domain: 
Materials and Coatings
FIle Date: 
2008-07-31
Grant Date: 
2013-12-10
Grant time: 
1,958 days
Grant time percentile rank: 
36
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Surface enhanced raman detection on metalized nanostructured polymer films

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NRL

Disclosed herein is a structure having a spatially organized polymer nanostructured thin film and a metal coating on the film. The thin film is made by directing a monomer vapor or pyrolyzed monomer vapor towards a substrate at an angle other than perpendicular to the substrate, and polymerizing the monomer or pyrolyzed monomer on the substrate.

Inventors: 
Demirel, Melik C.; Dressick, Walter J.; Allara, David
Patent Number: 
US8652632
Technical domain: 
Materials and Coatings
FIle Date: 
2009-06-03
Grant Date: 
2014-02-18
Grant time: 
1,721 days
Grant time percentile rank: 
31
Claim count percentile rank: 
8
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Barium copper sulfur fluoride transparent conductive thin films and bulk material

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NRL

A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550° C. for at least two hours, and then heating the ampoule at a temperature between 550 and 950° C. for at least two hours. The BCSF material may be doped with potassium, rubidium, or sodium. Additionally, a p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.

Inventors: 
Frantz, Jesse A.; Sanghera, Jasbinder S.; Nguyen, Vinh Q.; Kim, Woohong; Aggarwal, Ishwar D.
Patent Number: 
US8728284
Technical domain: 
Materials and Coatings
FIle Date: 
2012-03-06
Grant Date: 
2014-05-20
Grant time: 
805 days
Grant time percentile rank: 
14
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Preparing electrodes for electroplating

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NRL

A method of immersing an electrode in an electroplating solution while under vacuum, to substantially eliminate air and/or other gas from microscopic holes, cavities or indentations in the electrode. A method of electroplating an electrode in an electroplating solution including the application of a vacuum to the electrode while it is immersed in the electroplating solution to thereby substantially eliminate air and/or other gas from microscopic holes, cavities or indentations in the electrode. The electroplating liquid may be applied to only one side of the electrode (“the wet side”) in which case, sufficient time is allowed to pass for the immersion liquid to fill the microscopic through-holes, cavities or indentations in the electrode. An enhancement of this mode is to force liquid through the microscopic holes from the wet side. A highly penetrating solvent may be used as an immersion liquid. Alternatively, carbon dioxide can be used as an immersion liquid, in which case the liquid carbon dioxide may be obtained by adjusting the temperature and pressure conditions in a closed container of gaseous carbon dioxide.

Inventors: 
Perkins, Keith F.; Skeath, Perry; Johnson, Lee James; Peele, John R.; Bassett, William
Patent Number: 
US8728293
Technical domain: 
Materials and Coatings
FIle Date: 
2013-02-08
Grant Date: 
2014-05-20
Grant time: 
466 days
Grant time percentile rank: 
8
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method of mediating forward voltage drift in a SiC device

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NRL

A method of reversing Shockley stacking fault expansion includes providing a bipolar or a unipolar SiC device exhibiting forward voltage drift caused by Shockley stacking fault nucleation and expansion. The SiC device is heated to a temperature above 150° C. A current is passed via forward bias operation through the SiC device sufficient to induce at least a partial recovery of the forward bias drift.

Inventors: 
Caldwell, Joshua D.; Stahlbush, Robert E.; Hobart, Karl D.; Tadjer, Marko J.; Glembocki, Orest J.
Patent Number: 
US7915143
Technical domain: 
Materials and Coatings
FIle Date: 
2009-04-30
Grant Date: 
2011-03-29
Grant time: 
698 days
Grant time percentile rank: 
12
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

P-N junction for use as an RF mixer from GHZ to THZ frequencies

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This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.

Inventors: 
Magno, Richard; Ancona, Mario; Boos, John Bradley; Champlain, James G.; Newman, Harvey S.
Patent Number: 
US8076700
Technical domain: 
Materials and Coatings
FIle Date: 
2009-06-02
Grant Date: 
2011-12-13
Grant time: 
924 days
Grant time percentile rank: 
16
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

High power density photo-electronic and photo-voltaic materials and methods of making

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NRL

A high power density photo-electronic and photo-voltaic material comprising a bio-inorganic nanophotoelectronic material with a photosynthetic reaction center protein encapsulated inside a multi-wall carbon nanotube or nanotube array. The array can be on an electrode. The photosynthetic reaction center protein can be immobilized on the electrode surface and the protein molecules can have the same orientation. A method of making a high power density photo-electronic and photo-voltaic material comprising the steps of immobilizing a bio-inorganic nanophotoelectronic material with a photosynthetic reaction center protein inside a carbon nanotube, wherein the immobilizing is by passive diffusion, wherein the immobilizing can include using an organic linker.

Inventors: 
Lebedev, Nikolai; Trammell, Scott A.; Tsoi, Stanislav; Twigg, Mark E.; Schnur, Joel M.
Patent Number: 
US8294135
Technical domain: 
Materials and Coatings
FIle Date: 
2010-05-10
Grant Date: 
2012-10-23
Grant time: 
897 days
Grant time percentile rank: 
16
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectrics

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NRL

Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Inventors: 
Garces, Nelson; Wheeler, Virginia D.; Gaskill, David Kurt; Eddy Jr., Charles R.; Jernigan, Glenn G.
Patent Number: 
US8518491
Technical domain: 
Materials and Coatings
FIle Date: 
2011-07-14
Grant Date: 
2013-08-27
Grant time: 
775 days
Grant time percentile rank: 
14
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Diamond and diamond composite material

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NRL

A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate.

Inventors: 
Kub, Francis J.; Eddy Jr., Charles R.; Feygelson, Boris N.; Johnson, Scooter
Patent Number: 
US9117736
Technical domain: 
Materials and Coatings
FIle Date: 
2013-05-21
Grant Date: 
2015-08-25
Grant time: 
826 days
Grant time percentile rank: 
15
Claim count percentile rank: 
9
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

n- and p-channel field effect transistors with single quantum well for complementary circuits

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NRL

A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

Inventors: 
Bennett, Brian R.; Boos, John Bradley; Ancona, Mario; Champlain, James G.; Papanicolaou, Nicolas A.
Patent Number: 
US8652959
Technical domain: 
Materials and Coatings
FIle Date: 
2013-02-01
Grant Date: 
2014-02-18
Grant time: 
382 days
Grant time percentile rank: 
6
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Silicon carbide rectifier

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NRL

Silicon carbide PiN diodes are presented with reduced temperature coefficient crossover points by limited p type contact area to limit hole injection in the n type drift layer in order to provide a lower current at which the diode shifts from negative temperature coefficient to a positive temperature coefficient of forward voltage for mitigating thermal runaway.

Inventors: 
Hobart, Karl D.; Kub, Francis J.; Ancona, Mario; Imhoff, Eugene A.
Patent Number: 
US8723218
Technical domain: 
Materials and Coatings
FIle Date: 
2012-09-06
Grant Date: 
2014-05-13
Grant time: 
614 days
Grant time percentile rank: 
11
Claim count percentile rank: 
8
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Graphene on semiconductor detector

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NRL

Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.

Inventors: 
Kub, Francis J.; Anderson, Travis; Hobart, Karl D.
Patent Number: 
US8872159
Technical domain: 
Materials and Coatings
FIle Date: 
2012-09-28
Grant Date: 
2014-10-28
Grant time: 
760 days
Grant time percentile rank: 
13
Claim count percentile rank: 
8
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Tunnel diodes incorporating strain-balanced, quantum-confined heterostructures

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A strain-balanced quantum well tunnel junction (SB-QWTJ) device. QW structures are formed from alternating quantum well and barrier layers situated between n++ and p++ layers in a tunnel junction formed on a substrate. The quantum well layers exhibit a compressive strain with respect to the substrate, while the barrier layers exhibit a tensile strain. The composition and layer thicknesses of the quantum well and barrier layers are configured so that the compressive and tensile strains in the structure are balanced.

Inventors: 
Lumb, Matthew; Yakes, Michael K.; González, María; Bailey, Christopher; Walters, Robert J.
Patent Number: 
US8878161
Technical domain: 
Materials and Coatings
FIle Date: 
2014-03-06
Grant Date: 
2014-11-04
Grant time: 
243 days
Grant time percentile rank: 
4
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

High power density photo-electronic and photo-voltaic materials and methods of making

Patent image
NRL

A high power density photo-electronic and photo-voltaic material comprising a bio-inorganic nanophotoelectronic material with a photosynthetic reaction center protein encapsulated inside a multi-wall carbon nanotube or nanotube array. The array can be on an electrode. The photosynthetic reaction center protein can be immobilized on the electrode surface and the protein molecules can have the same orientation. A method of making a high power density photo-electronic and photo-voltaic material comprising the steps of immobilizing a bio-inorganic nanophotoelectronic material with a photosynthetic reaction center protein inside a carbon nanotube, wherein the immobilizing is by passive diffusion, wherein the immobilizing can include using an organic linker.

Inventors: 
Lebedev, Nikolai; Trammell, Scott A.; Tsoi, Stanislav; Twigg, Mark E.; Schnur, Joel M.
Patent Number: 
US8883538
Technical domain: 
Materials and Coatings
FIle Date: 
2012-09-11
Grant Date: 
2014-11-11
Grant time: 
791 days
Grant time percentile rank: 
14
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Strained InGaAs quantum wells for complementary transistors

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An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

Inventors: 
Bennett, Brian R.; Boos, John Bradley; Chick, Theresa F.; Champlain, James G.
Patent Number: 
US8884265
Technical domain: 
Materials and Coatings
FIle Date: 
2014-01-16
Grant Date: 
2014-11-11
Grant time: 
299 days
Grant time percentile rank: 
5
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Transistor having graphene base

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NRL

A transistor device having a graphene base for the transport of electrons into a collector is provided. The transistor consists of a heterostructure comprising an electron emitter, an electron collector, and a graphene material base layer consisting of one or more sheets of graphene situated between the emitter and the collector. The transistor also can further include an emitter transition layer at the emitter interface with the base and/or a collector transition layer at the base interface with the collector. The electrons injected into the graphene material base layer can be “hot electrons” having an energy E substantially greater than EF, the Fermi energy in the graphene material base layer or can be “non-hot electrons” having an energy E approximately equal to than EF. The electrons can have the properties of ballistic transit through the base layer.

Inventors: 
Kub, Francis J.
Patent Number: 
US8901536
Technical domain: 
Materials and Coatings
FIle Date: 
2011-09-21
Grant Date: 
2014-12-02
Grant time: 
1,168 days
Grant time percentile rank: 
21
Claim count percentile rank: 
7
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectrics

Patent image
NRL

Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Inventors: 
Garces, Nelson; Wheeler, Virginia D.; Gaskill, David Kurt; Eddy Jr., Charles R.; Jernigan, Glenn G.
Patent Number: 
US8920877
Technical domain: 
Materials and Coatings
FIle Date: 
2013-07-01
Grant Date: 
2014-12-30
Grant time: 
547 days
Grant time percentile rank: 
9
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Simultaneous modulation of quantum dot photoluminescence using orthogonal fluorescence resonance energy transfer (FRET) and charge transfer quenching (CTQ)

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NRL

Quantum dots are modified with varying amounts of (a) a redox-active moiety effective to perform charge transfer quenching, and (b) a fluorescent dye effective to perform fluorescence resonance energy transfer (FRET), so that the modified quantum dots have a plurality of photophysical properties. The FRET and charge transfer pathways operate independently, providing for two channels of control for varying luminescence of quantum dots having the same innate properties.

Inventors: 
Medintz, Igor L.; Algar, Russ W.; Stewart, Michael H.; Susumu, Kimihiro
Patent Number: 
US8921140
Technical domain: 
Materials and Coatings
FIle Date: 
2014-02-06
Grant Date: 
2014-12-30
Grant time: 
327 days
Grant time percentile rank: 
5
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

III-nitride P-channel field effect transistor with hole carriers in the channel

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A non-inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a nitrogen-polar III-Nitride first material, a barrier material layer, a two-dimensional hole gas in the barrier layer, and wherein the nitrogen-polar III-Nitride material comprises one or more III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is nitrogen-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the nitrogen-polar (001) face is the dominant face, growing a nucleation layer, growing a GaN epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

Inventors: 
Kub, Francis J.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.
Patent Number: 
US9006791
Technical domain: 
Materials and Coatings
FIle Date: 
2014-01-31
Grant Date: 
2015-04-14
Grant time: 
438 days
Grant time percentile rank: 
7
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Graphene on semiconductor detector

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Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.

Inventors: 
Kub, Francis J.; Hobart, Karl D.; Anderson, Travis J.
Patent Number: 
US9029833
Technical domain: 
Materials and Coatings
FIle Date: 
2014-08-28
Grant Date: 
2015-05-12
Grant time: 
257 days
Grant time percentile rank: 
4
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Graphene resonant tunneling transistor

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A graphene device having a ribbon structure with soft boundaries formed between two thin parallel transport barriers in a “railroad track” configuration. Such a structure permits transport along the ribbon, and also permits transport of electrons across the barriers by means of resonant tunneling through quasi-bound states within the railroad track confinement. The transport barriers can be of any form of so long as transport through the barriers leads to the formation of isolated resonant bands with a transport gap. In some embodiments, the transport barriers can be in the form of a pair of parallel line defects, wherein the line defects delineate the central ribbon section and the two lateral sections. In some such embodiments, the line defects are chemically decorated by the adsorption of diatomic gases. In other embodiments, the transport barriers can be formed by the application of large local potentials directly to the graphene sheet.

Inventors: 
Gunlycke, Daniel L.; White, Carter T.
Patent Number: 
US9059265
Technical domain: 
Materials and Coatings
FIle Date: 
2013-12-06
Grant Date: 
2015-06-16
Grant time: 
557 days
Grant time percentile rank: 
10
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method of forming Cu(InxGa1-x)S2 and Cu(InxGa1-x)Se2 nanoparticles

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A method for synthesizing Cu(InxGa1-x)S2 and Cu(InxGa1-x)Se2 nanopowders using flame spray pyrolysis to form solar cell absorber materials. The flame spray product is the oxide nanoparticles of the absorber materials (copper indium gallium oxide). The oxide nanoparticles may be deposited directly onto glass substrates. The oxide nanoparticles are then sulfurdized or selenized with a post deposition anneal directly on the substrate to form the absorber layer for a solar cell device.

Inventors: 
Baker, Colin C.; Kim, Woohong; Bayya, Shyam S.; Sanghera, Jasbinder S.; Aggarwal, Ishwar D.
Patent Number: 
US9099606
Technical domain: 
Materials and Coatings
FIle Date: 
2014-02-27
Grant Date: 
2015-08-04
Grant time: 
523 days
Grant time percentile rank: 
9
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material

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A device with complementary non-inverted N-channel and inverted P-channel field effect transistors comprising a layer grown epitaxially on a substrate, a barrier layer, a two-dimensional electron gas in the first III-Nitride epitaxial layer, a second III-Nitride material layer, and a two-dimensional hole gas in the second III-Nitride epitaxial layer. A device with complementary inverted N-channel and non-inverted P-channel field effect transistors comprising a nitrogen-polar III-Nitride layer grown epitaxially, a barrier material layer, a two-dimensional hole gas, and a two-dimensional electron gas in the second III-Nitride epitaxial layer. A method of making complementary inverted P-channel and non-inverted N-channel III-Nitride field effect transistors. A method of making a complementary non-inverted P-channel field effect transistor and inverted N-channel III-Nitride field effect transistor on a substrate.

Inventors: 
Kub, Francis J.; Anderson, Travis J.; Mastro, Michael A.; Eddy Jr., Charles R.; Hite, Jennifer K.
Patent Number: 
US9105499
Technical domain: 
Materials and Coatings
FIle Date: 
2015-03-24
Grant Date: 
2015-08-11
Grant time: 
140 days
Grant time percentile rank: 
2
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material

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A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.

Inventors: 
Kub, Francis J.; Anderson, Travis J.; Mastro, Michael A.; Eddy Jr., Charles R.; Hite, Jennifer K.
Patent Number: 
US9111786
Technical domain: 
Materials and Coatings
FIle Date: 
2014-12-19
Grant Date: 
2015-08-18
Grant time: 
242 days
Grant time percentile rank: 
4
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Inverted III-nitride P-channel field effect transistor with hole carriers in the channel

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An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride barrier material, a second material layer, a two-dimensional hole gas in the second layer, and wherein the gallium-polar material comprises one or more III-Nitride epitaxial material layers grown such that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making an inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the gallium-polar (0001) face is the dominant face, growing a nucleation layer, growing a gallium-polar epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

Inventors: 
Kub, Francis J.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.
Patent Number: 
US9196614
Technical domain: 
Materials and Coatings
FIle Date: 
2015-02-09
Grant Date: 
2015-11-24
Grant time: 
288 days
Grant time percentile rank: 
5
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Transistor having graphene base

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A transistor device having a graphene base for the transport of electrons into a collector is provided. The transistor consists of a heterostructure comprising an electron emitter, an electron collector, and a graphene material base layer consisting of one or more sheets of graphene situated between the emitter and the collector. The transistor also can further include an emitter transition layer at the emitter interface with the base and/or a collector transition layer at the base interface with the collector. The electrons injected into the graphene material base layer can be “hot electrons” having an energy E substantially greater than EF, the Fermi energy in the graphene material base layer or can be “non-hot electrons” having an energy E approximately equal to than EF. The electrons can have the properties of ballistic transit through the base layer.

Inventors: 
Kub, Francis J.
Patent Number: 
US9184266
Technical domain: 
Materials and Coatings
FIle Date: 
2014-09-19
Grant Date: 
2015-11-10
Grant time: 
417 days
Grant time percentile rank: 
7
Claim count percentile rank: 
10
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel

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An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride grown epitaxially on a substrate, a barrier, a two-dimensional hole gas in the barrier layer material at the heterointerface of the first material, and wherein the gallium-polar III-Nitride material comprises III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face of a substrate so that the gallium-polar (0001) face is the dominant face for growth of III-Nitride epitaxial layer growth material, growing a GaN epitaxial layer, doping, growing a barrier, etching, forming a contact, performing device isolation, defining a gate opening, defining gate metal, making a contact window, and depositing and defining a thick metal.

Inventors: 
Kub, Francis J.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.
Patent Number: 
US9275998
Technical domain: 
Materials and Coatings
FIle Date: 
2014-04-29
Grant Date: 
2016-03-01
Grant time: 
672 days
Grant time percentile rank: 
12
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Thermally efficient power conversion modules for space solar power

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A space solar power system that has sun-tracking curved reflectors, such as off-axis parabolic reflectors, a secondary reflector, and a power conversion module for converting the sunlight into microwave energy and transmit the energy to remote locations. The power conversion module can have a modular stepped conical shape, with additional radiator area configured in vertical sidewalls, horizontal radiator panels, or both. Hinged, fold-out units can house the microwave conversion electronics and the antenna for transmitting the microwave radiation to the remote ground station.

Inventors: 
Jaffe, Paul I.; Nurnberger, Michael W.; Brown, Michael A.
Patent Number: 
US9276148
Technical domain: 
Materials and Coatings
FIle Date: 
2012-06-20
Grant Date: 
2016-03-01
Grant time: 
1,350 days
Grant time percentile rank: 
24
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Magnetic field controlled reconfigurable semiconductor logic device and method for controlling the same

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A non-volatile reconfigurable logic device executing logical operations and a memory function and controlled by a magnetic field is provided. The reconfigurable logic device includes i) at least one semiconductor device; and ii) a pair of magnetic field controlled devices respectively spaced apart from both sides of the semiconductor device and that are adapted to generate magnetic field leakage to control the semiconductor device. The semiconductor device includes i) a first semiconductor layer; and ii) a second semiconductor layer located on the first semiconductor layer. One of the first semiconductor layer and the second semiconductor layer is a p-type semiconductor layer and the other is an n-type semiconductor layer.

Inventors: 
Chang, Joon Yeon; Hong, Jin Ki; Song, Jin Dong; Johnson, Mark
Patent Number: 
US9331266
Technical domain: 
Materials and Coatings
FIle Date: 
2013-12-18
Grant Date: 
2016-05-03
Grant time: 
867 days
Grant time percentile rank: 
15
Claim count percentile rank: 
7
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Highly conducting and transparent thin polymer films formed from double and multiple layers of poly(3,4-ethylenedioxythiopene) and its derivatives

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A polymer film comprising at least two layers, wherein each layer comprises a compound comprising the formula: wherein R1 and R2 are independently selected organic groups. A method of making a polymer film comprising the steps of: providing a monomer solution comprising one or more monomers comprising the formula: wherein R1 and R2 are independently selected organic groups; dispensing the monomer solution onto a substrate; heating the monomer solution on the substrate to polymerize the monomer; and repeating the steps of providing a monomer solution, dispensing, and heating one or more times, wherein the spin-coating is performed on top of the prior spin-coated layer.

Inventors: 
Martin, Brett D.; Shashidhar, Ranganathan; Nikolov, Nikolay
Patent Number: 
US7026042
Technical domain: 
Materials and Coatings
FIle Date: 
2003-03-26
Grant Date: 
2006-04-11
Grant time: 
1,112 days
Grant time percentile rank: 
20
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Linear chemoselective carbosilane polymers and methods for use in analytical and purification applications

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This invention relates generally to a new class of chemoselective polymer materials. In particular, the invention relates to linear polycarbosilane compounds for use in various analytical applications involving sorbent polymer materials, including chromatoghraphy, chemical trapping, analyte collection, and chemical sensor applications. These polymers have pendant and terminal aryl, alkyl, alkenyl, and alkynyl groups that are functionalized with halogen substituted alcohol or phenol groups, having the general structure: wherein n is an integer greater than 1;wherein at least one of R1 and R2 is a linear or branched arm having at least one group independently selected from the group consisting of alkyl, alkenyl, alkynyl, and aryl groups, or combinations thereof, and having at least one halogen substituted alcohol or phenol groups attached thereto;wherein any said R1 and R2 aryl groups are attached to said [Si—X—]n either directly or through a short hydrocarbon chain;wherein any remaining said R1 or R2 group is a hydrocarbon or carbosilane group;wherein X is a polymer component selected from the group consisting of alkylene, alkenylene, alkynylene, arylene groups, and combinations thereof; andwherein Z1 and Z2 are end groups independently selected from the group consisting of alkyl, alkenyl, alkynyl, aryl, alkyl silanes, aryl silanes, hydroxyl, silicon hydride, alkoxides, phenols, halogen substituted alcohols, halogen substituted phenols, organosilyl, and combinations thereof. These polymeric materials are primarily designed to sorb hydrogen bond basic analytes such as organophosphonate esters (nerve agents and precursors) and nitro-substituted compounds (explosives).

Inventors: 
Mcgill, Robert A.; Houser, Eric J.
Patent Number: 
US7157052
Technical domain: 
Materials and Coatings
FIle Date: 
2003-10-10
Grant Date: 
2007-01-02
Grant time: 
1,180 days
Grant time percentile rank: 
21
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of elastomeric carborane-siloxanes by hydrosilation reactions

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A carborane-siloxane compound is provided having the repeat unit Q contains any of —SiR2—, —SiR2—O—, —C≡C—C≡C—, carboranyl, and U′. Each R and R′ is alkyl, aryl, alkylaryl, haloalkyl, haloaryl, or mixtures thereof. Each U′ is derivable from hydrosilation of an alkenyl or alkynyl group. Each T is alkyl, aryl, alkylaryl, haloalkyl, haloaryl, mixtures thereof, —(O—SiR′2)xH, or the repeat unit. Each x and x′ is a positive integer. The compounds may be made be reacting a carborane-siloxane precursor having unsaturated end groups with a siloxane crosslinker in the presence of a hydrosilation catalyst.

Inventors: 
Keller, Teddy M.; Kolel-veetil, Manoj K.
Patent Number: 
US7238766
Technical domain: 
Materials and Coatings
FIle Date: 
2004-06-22
Grant Date: 
2007-07-03
Grant time: 
1,106 days
Grant time percentile rank: 
20
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of oligomeric cyanate esters

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A cyanate ester system is disclosed. An aryl ether oligomer may be made from a dihydroxyaromatic compound and a dihaloaromatic compound in the presence of a base. The oligomer is then reacted with a cyanide compound in the presence of a base to form the cyanate ester shown below. The cyanate ester may then be cross-linked to a thermoset having triazine ring cross-links. HO—Ar2O—Ar1—O—Ar2nOH

Inventors: 
Keller, Teddy M.; Laskoski, Matthew
Patent Number: 
US7348395
Technical domain: 
Materials and Coatings
FIle Date: 
2006-06-22
Grant Date: 
2008-03-25
Grant time: 
642 days
Grant time percentile rank: 
11
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of elastomeric poly(carborane-siloxane-acetelyene)s

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A linear polymer comprising carborane, siloxane, and acetylene units, which may be cross-linked to a cured polymer and/or pyrolyzed to a ceramic.

Inventors: 
Keller, Teddy
Patent Number: 
US7411030
Technical domain: 
Materials and Coatings
FIle Date: 
2005-11-22
Grant Date: 
2008-08-12
Grant time: 
994 days
Grant time percentile rank: 
18
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Thermoset material made from siloxane-acetylene polymer containing metal-acetylene complex

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A metallized thermoset containing a crosslinked metallized polymer having a backbone having an acetylenic repeat unit and —SiR2—(O—SiR2)n— and/or —SiR2—(O—SiR2)n-[Cb-SiR2—(O—SiR2)n]m—. At least one of the acetylenic repeat units contains a (MLx)y-acetylene complex. The metallized thermoset contains a crosslink between acetylene groups and/or a polycarbosiloxane crosslink. M is a metal, L is a ligand, x and y are positive integers, R is an organic group, Cb is a carborane, and n and m are greater than or equal to zero. A method of making a metallized thermoset by providing a metallized polymer and heating the metallized polymer. The metallized polymer contains the above backbone. Heating the metallized polymer forms crosslinks between acetylene groups and/or polycarbosiloxane crosslinks.

Inventors: 
Keller, Teddy M.; Kolel-veetil, Manoj
Patent Number: 
US7576168
Technical domain: 
Materials and Coatings
FIle Date: 
2005-09-27
Grant Date: 
2009-08-18
Grant time: 
1,421 days
Grant time percentile rank: 
26
Claim count percentile rank: 
10
Citations percentile rank: 
3
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Ceramic material made from siloxane-acetylene polymer containing metal-acetylene complex

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A ceramic made by providing a composition and pyrolyzing the composition. The composition has siloxane polymer, metallic polymer, siloxane thermoset, and/or metallic thermoset having a backbone having: an acetylenic repeat unit; and —SiR2—(O—SiR2)n— and/or —SiR2—(O—SiR2)n-[Cb-SiR2—(O—SiR2)n]m—. R is an organic group, Cb is a carborane, and n and m are integers greater than or equal to zero. Any crosslinking is a crosslink between acetylene groups and/or a polycarbosiloxane crosslink. The composition also has free metal atoms, metal clusters, or metal nanoparticles dispersed homogeneously throughout the composition; (MLx)y-acetylene complex in the backbone; and/or a metallic compound for forming a (MLx)y-acetylene complex. M is a metal, L is a ligand, x and y are positive integers.

Inventors: 
Keller, Teddy M.; Kolel-veetil, Manoj K.; Qadri, Syed B.
Patent Number: 
US7579424
Technical domain: 
Materials and Coatings
FIle Date: 
2005-09-27
Grant Date: 
2009-08-25
Grant time: 
1,428 days
Grant time percentile rank: 
26
Claim count percentile rank: 
8
Citations percentile rank: 
3
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Carbon nanoarchitectures with ultrathin, conformal polymer coatings for electrochemical capacitors

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A composite having an electroactive polymer coating on a porous carbon structure is disclosed. The composite may be used in capacitor electrodes. The composite may be made by self-limiting electropolymerization of a monomer on the carbon structure.

Inventors: 
Long, Jeffrey W.; Rolison, Debra R.
Patent Number: 
US7255924
Technical domain: 
Materials and Coatings
FIle Date: 
2004-01-13
Grant Date: 
2007-08-14
Grant time: 
1,309 days
Grant time percentile rank: 
24
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of elastomeric carborane-siloxanes by hydrosilation reactions

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NRL

A carborane-siloxane compound is provided having the repeat unit Q contains any of —SiR2—, —SiR2—O—, —C≡C—C≡C—, carboranyl, and U′. Each R and R′ is alkyl, aryl, alkylaryl, haloalkyl, haloaryl, or mixtures thereof. Each U′ is derivable from hydrosilation of an alkenyl or alkynyl group. Each T is alkyl, aryl, alkylaryl, haloalkyl, haloaryl mixtures thereof, —(O—SiR′2)xH, or the repeat unit. Each x and x′ is a positive integer. The compounds may be made be reacting a carborane-siloxane precursor having unsaturated end groups with a siloxane crosslinker in the presence of a hydrosilation catalyst.

Inventors: 
Keller, Teddy M.; Kolel-veetil, Manoj K.
Patent Number: 
US7605218
Technical domain: 
Materials and Coatings
FIle Date: 
2007-03-20
Grant Date: 
2009-10-20
Grant time: 
945 days
Grant time percentile rank: 
17
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of elastomeric poly(carborane-siloxane-acetelyene)s

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A linear polymer comprising carborane, siloxane, and acetylene units, which may be cross-linked to a cured polymer and/or pyrolyzed to a ceramic.

Inventors: 
Keller, Teddy M.
Patent Number: 
US7649070
Technical domain: 
Materials and Coatings
FIle Date: 
2008-06-27
Grant Date: 
2010-01-19
Grant time: 
571 days
Grant time percentile rank: 
10
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Coating of organic fibers with siloxane-carborane polymers

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A fiber of linear polymer coated with a siloxane-carborane polymer or a thermoset or ceramic made therefrom. An organic fiber coated with a siloxane-carborane polymer or a thermoset or ceramic made therefrom and a surfactant. An organic fiber coated with a siloxane-carborane polymer made from a hydrosilation reaction of a siloxane-carborane compound containing at least two unsaturated carbon-carbon bonds and a silane compound or a thermoset or ceramic made therefrom. A method of coating a fiber by contacting a fiber to an aqueous solution of a siloxane-carborane polymer and a surfactant or to a solution of a siloxane-carborane polymer in a non-halogenated organic solvent. A method of contacting a fiber to a solution of a siloxane-carborane polymer, drying the coating to a temperature that does not change the polymer to a thermoset or ceramic, and using the dried, coated fiber in a process that requires that the fiber be flexible.

Inventors: 
Keller, Teddy M.; Kolel-veetil, Manoj K.
Patent Number: 
US7705100
Technical domain: 
Materials and Coatings
FIle Date: 
2006-08-30
Grant Date: 
2010-04-27
Grant time: 
1,336 days
Grant time percentile rank: 
24
Claim count percentile rank: 
8
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Divinylsilane-terminated aromatic ether-aromatic ketone-containing compounds

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A compound having the formula: Each Ar is an aromatic group. Each R is an alkyl group. The value n is a positive integer. The values of w, x, y, and z are 0 or 1. If y is 0 than x and z are 0 and w is 1, and if y is 1 than x and z have different values and w equals z. A thermoset made by crosslinking a silane-containing compound with the above compound. A method of making the above compound when y is 1 by: reacting 4,4′-difluorobenzophenone with an aromatic diol to form an oligomer; and reacting the oligomer with a vinyl dialkylsilane. A method of making the below compound by: reacting 4,4′-difluorobenzophenone with a vinyl dialkylsilane. Each R is an independently selected alkyl group.

Inventors: 
Laskoski, Matthew; Keller, Teddy M.
Patent Number: 
US7772355
Technical domain: 
Materials and Coatings
FIle Date: 
2008-01-28
Grant Date: 
2010-08-10
Grant time: 
925 days
Grant time percentile rank: 
16
Claim count percentile rank: 
5
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Divinylsilane-terminated aromatic ether-aromatic ketone-containing compounds

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A compound having the formula: Each Ar is an aromatic group. Each R is an alkyl group. The value n is a positive integer. The values of w, x, y, and z are 0 or 1. If y is 0 than x and z are 0 and w is 1, and if y is 1 than x and z have different values and w equals z. A thermoset made by crosslinking a silane-containing compound with the above compound. A method of making the above compound when y is 1 by: reacting 4,4′-difluorobenzophenone with an aromatic diol to form an oligomer; and reacting the oligomer with a vinyl dialkylsilane. A method of making the below compound by: reacting 4,4′-difluorobenzophenone with a vinyl dialkylsilane. Each R is an independently selected alkyl group.

Inventors: 
Laskoski, Matthew; Keller, Teddy M.
Patent Number: 
US7863401
Technical domain: 
Materials and Coatings
FIle Date: 
2010-07-28
Grant Date: 
2011-01-04
Grant time: 
160 days
Grant time percentile rank: 
2
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Aromatic ether and alkynyl containing phthalonitriles

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NRL

Compounds having the formulas below. R is an aromatic-containing group. Each M is an alkali metal. Each m is a positive integer. The value of n is a positive integer. The value p is 0 or 1. If p is 0 then n is 1. A thermoset made by curing a composition containing the below phthalonitrile monomers. A method of reacting a diphenyl acetylene compound with an excess of an aromatic diol in the presence of an alkali metal carbonate to form the above oligomer. A method of reacting a phenoxyphthalonitrile with an acetylene compound to form the phthalonitrile monomer below.

Inventors: 
Laskowski, Matthew; Keller, Teddy M.
Patent Number: 
US8530607
Technical domain: 
Materials and Coatings
FIle Date: 
2011-07-05
Grant Date: 
2013-09-10
Grant time: 
798 days
Grant time percentile rank: 
14
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of and curing additives for phthalonitriles

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NRL

A method of: providing a solution of a dichloroaromatic compound having an electron-withdrawing group bound to each aromatic ring containing one of the chloride groups; an excess of a dihydroxyaromatic compound; an organic transition metal complex or a transition metal salt; a base; and a solvent; and heating the solution to a temperature at which the dichloroaromatic compound and the dihydroxyaromatic compound react to form an aromatic ether oligomer that is a dihydroxy-terminated compound or a dimetallic salt thereof. Water formed during the heating is concurrently distilled from the solution. A method of curing a phthalonitrile monomer in the presence of an acid and a curing agent to form a phthalonitrile thermoset.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew; Saab, Andrew
Patent Number: 
US8735532
Technical domain: 
Materials and Coatings
FIle Date: 
2013-03-15
Grant Date: 
2014-05-27
Grant time: 
438 days
Grant time percentile rank: 
7
Claim count percentile rank: 
8
Citations percentile rank: 
3
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of and curing additives for phthalonitriles

Patent image
NRL

A method of: providing a solution of a dichloroaromatic compound having an electron-withdrawing group bound to each aromatic ring containing one of the chloride groups; a dihydroxyaromatic compound; an organic transition metal complex or a transition metal salt; a base; and a solvent; and heating the solution to a temperature at which the dichloroaromatic compound and the dihydroxyaromatic compound react to form a dimetallic salt of an aromatic ether oligomer. The molar ratio of the dihydroxyaromatic compound to the dichloroaromatic compound is greater than 2:1. Water formed during the heating is concurrently distilled from the solution.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew; Saab, Andrew
Patent Number: 
US8859712
Technical domain: 
Materials and Coatings
FIle Date: 
2014-05-27
Grant Date: 
2014-10-14
Grant time: 
140 days
Grant time percentile rank: 
2
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

C-substituted, 1H-azoles for amphoteric, solvent-less proton conductivity

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NRL

Disclosed herein are the compounds shown below. Also disclosed are methods of making the compounds. R1=—O—;R2=any alkyl chain;R3=—CH3, —CN, —COOCH3, -tetrazole, -imidazole, or -triazole;R4=—H or —R5;R5=—H, -halogen, —C≡CH, or —C≡C—;n is a positive integer; andm is a positive integer.

Inventors: 
Ricks-laskoski, Holly L.; Snow, Arthur W.; Laskoski, Matthew; Deese, Stephen M.; Chaloux, Brian L.
Patent Number: 
US9217062
Technical domain: 
Materials and Coatings
FIle Date: 
2013-08-01
Grant Date: 
2015-12-22
Grant time: 
873 days
Grant time percentile rank: 
16
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method for making electro-optical devices using a hydrogenion splitting technique

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NRL

A method is provided for transferring an electro-optical layer grown on a growth substrate to a handle substrate. The method includes implanting hydrogen ions in the transfer substrate to form an intermediate hydrogen ion implant layer and bonding the transfer substrate to the handle substrate to form a joined structure. The joined structure is heated to a temperature sufficient to split the joined structure to thereby transfer a portion of the electro-optical layer to the handle substrate.

Inventors: 
Kub, Francis J.; Hobart, Karl D.
Patent Number: 
US6593212
Technical domain: 
Materials and Coatings
FIle Date: 
2001-10-29
Grant Date: 
2003-07-15
Grant time: 
624 days
Grant time percentile rank: 
11
Claim count percentile rank: 
7
Citations percentile rank: 
2
'Cited by' percentile rank: 
3
Assignee: 
US NAVY

Semiconductor substrate incorporating a neutron conversion layer

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NRL

A semiconductor substrate incorporating a neutron conversion layer (such as boron-10) that is sensitive enough to permit the counting of single neutron events. The substrate includes an active semiconductor device layer, a base substrate, an insulating layer provided between the active semiconductor device layer and the base substrate, and a neutron conversion layer provided between the active semiconductor device layer and the base substrate. The neutron conversion layer is located within the insulating layer, between the insulating layer and the base substrate or between the active semiconductive device layer and the insulating layer. A barrier layer is provided between at least one of the neutron conversion layer and the active semiconductor device layer and the neutron conversion layer and the base substrate to prevent diffusion of the neutron conversion material provided in the neutron conversion layer. Further, a plurality of trenches may be formed in the active semiconductor device layer. In such a case, a trench neutron conversion layer is formed in at least one of the trenches to improve device sensitivity.

Inventors: 
Hughes, Harold L.
Patent Number: 
US6867444
Technical domain: 
Materials and Coatings
FIle Date: 
2003-10-20
Grant Date: 
2005-03-15
Grant time: 
512 days
Grant time percentile rank: 
9
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
2
Assignee: 
US NAVY

Polymeric and carbon compositions with metal nanoparticles

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NRL

The invention comprises a chemical composition with the structure shown below. The composition can be polymerized or pyrolyzed, forming transition metal nanoparticles homogeneously dispersed in a thermoset or carbon composition. The size of the nanoparticles can be controlled by manipulating the number and arrangement of functional groups in the composition and by changing the conditions of the polymerization or pyrolysis. The resulting thermosets and carbon compositions have useful magnetic, electric, mechanical, catalytic and/or optical properties. wherein A is selected from the group consisting of H, wherein M is a metal selected independently from the group consisting of Fe, Mn, Ru, Co, Ni, Cr and V;wherein Rx is independently selected from the group consisting of an aromatic, a substituted aromatic group and combinations thereof;wherein Ry is independently selected from the group consisting of an aromatic, a substituted aromatic group and combinations thereof;wherein m is ≧0;wherein s is ≧0;wherein z is ≧0; andwherein m and s are independently determined in each repeating unit.

Inventors: 
Keller, Teddy M.; Qadri, Syed B.
Patent Number: 
US6890504
Technical domain: 
Materials and Coatings
FIle Date: 
2003-08-28
Grant Date: 
2005-05-10
Grant time: 
621 days
Grant time percentile rank: 
11
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Deposition of thin films using an infrared laser

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NRL

This invention pertains to transfer of a solid target material onto a substrate by vaporizing the material by irradiating it with intense light of a resonant vibrational mode of the material and depositing the vaporized material on a substrate in a solid form.

Inventors: 
Bubb, Daniel; Horwitz, James; Callahan, John; Haglund Jr., Richard; Papantonakis, Michael
Patent Number: 
US6998156
Technical domain: 
Materials and Coatings
FIle Date: 
2002-01-29
Grant Date: 
2006-02-14
Grant time: 
1,477 days
Grant time percentile rank: 
27
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Design and selection of genetic targets for sequence resolved organism detection and identification

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NRL

A computer-implemented method as follows. Providing a list of target sequences associated with one or more organisms. Providing a list of candidate prototype sequences suspected of hybridizing to one or more of the target sequences. Generating a collection of probes corresponding to each candidate prototype sequence, each collection of probes having a set of probes for every subsequence. The sets consist of the corresponding subsequence and every variation of the corresponding subsequence formed by varying a center nucleotide of the corresponding subsequence. Generating a set of fragments corresponding to each target sequence. Calculating the binding free energy of each fragment with a perfect complimentary sequence of the fragment. Determining which extended fragments are perfect matches to any of the probes. Assembling a base call sequence corresponding to each candidate prototype sequence.

Inventors: 
Malanoski, Anthony P.; Wang, Zheng; Lin, Baochuan; Stenger, David A.; Schnur, Joel M.
Patent Number: 
US7668664
Technical domain: 
Materials and Coatings
FIle Date: 
2007-08-22
Grant Date: 
2010-02-23
Grant time: 
916 days
Grant time percentile rank: 
16
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Low temperature refining and formation of refractory metals

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NRL

This invention discloses and claims the low temperature reduction and purification of refractory metals, metal compounds, and semi-metals. The reduction is accomplished using non-aqueous ionic solvents in an electrochemical cell with the metal entity to be reduced. Using this invention, TiO2 is reduced directly to Ti metal at room temperature.

Inventors: 
O'gardy, William E.; Cheeck, Graham T.
Patent Number: 
US6958115
Technical domain: 
Materials and Coatings
FIle Date: 
2003-06-24
Grant Date: 
2005-10-25
Grant time: 
854 days
Grant time percentile rank: 
15
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of metal nanoparticle compositions from metallic and ethynyl compounds

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NRL

A process of making metal nanoparticles comprising the steps of: providing a precursor composition comprising at least one metallic compound and at least one organic compound; wherein the organic compound is selected from the group consisting of an ethynyl compound, a metal-ethynyl complex, and combinations thereof; wherein the precursor composition is a liquid or solid at room temperature; and heating the precursor composition under conditions effective to produce metal nanoparticles. A metal nanoparticle composition comprising metal nanoparticles dispersed homogenously in a matrix selected from the group consisting of ethynyl polymer, crosslinked ethynyl polymer, amorphous carbon, carbon nanotubes, carbon nanoparticles, graphite, and combinations thereof.

Inventors: 
Keller, Teddy M.; Qadri, Syed B.
Patent Number: 
US7347885
Technical domain: 
Materials and Coatings
FIle Date: 
2004-06-24
Grant Date: 
2008-03-25
Grant time: 
1,370 days
Grant time percentile rank: 
25
Claim count percentile rank: 
1
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of oligomeric cyanate esters

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NRL

A cyanate ester system is disclosed. An aryl ether oligomer may be made from a dihydroxyaromatic compound and a dihaloaromatic compound in the presence of a base. The oligomer is then reacted with a cyanide compound in the presence of a base to form the cyanate ester shown below. The cyanate ester may then be cross-linked to a thermoset having triazine ring cross-links HO—Ar2O—Ar1—O—Ar2nOH.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew
Patent Number: 
US7342085
Technical domain: 
Materials and Coatings
FIle Date: 
2006-06-22
Grant Date: 
2008-03-11
Grant time: 
628 days
Grant time percentile rank: 
11
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Wafer bonding of thinned electronic materials and circuits to high performance substrate

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NRL

A method of bonding a wafer to a substrate comprising the steps of: providing a wafer having a front surface and a back surface; attaching the front surface of the wafer to a support; thinning the wafer from the back surface; bonding the back surface of the wafer to a substrate using a thin bonding technique; and removing the support from the front surface of the wafer. A circuit comprising: a substrate; and a wafer; wherein the wafer is at most about 50 microns thick; wherein the wafer has a front surface comprising features; and wherein the wafer has a back surface bonded to the substrate using a thin bonding technique.

Inventors: 
Kub, Francis; Hobart, Karl
Patent Number: 
US7358152
Technical domain: 
Materials and Coatings
FIle Date: 
2005-11-22
Grant Date: 
2008-04-15
Grant time: 
875 days
Grant time percentile rank: 
16
Claim count percentile rank: 
7
Citations percentile rank: 
1
'Cited by' percentile rank: 
2
Assignee: 
US NAVY

High electron mobility transistors with Sb-based channels

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NRL

This invention pertains to an electronic device containing a semi-insulating substrate, a buffer layer of an antimony-based material disposed on said substrate, a channel layer of InAsySb1-y material disposed on said buffer layer, a barrier layer of an antimony-based disposed on said channel layer, and a cap layer of InAsySb1-y material disposed on said barrier layer, wherein the device can have frequency of on the order of 500 GHz and a reduced power dissipation.

Inventors: 
Boos, John Bradley; Bennett, Brian R.; Magno, Richard; Papanicolou, Nicholas A.; Tinkham, Brad P.
Patent Number: 
US7388235
Technical domain: 
Materials and Coatings
FIle Date: 
2005-09-20
Grant Date: 
2008-06-17
Grant time: 
1,001 days
Grant time percentile rank: 
18
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Low loss chalcogenide glass and process for making same using arsenic monochalcogenide

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NRL

This invention pertains to a chalcogenide glass of low optical loss that can be on the order of 30 dB/km or lower, and to a process for preparing the chalcogenide glass. The process includes the steps of optionally preparing arsenic monochalcogenide precursor or the precursor can be provided beforehand; dynamically distilling the precursor in an open system under vacuum from a hot section to a cold section to purify same; homogenizing the precursor in a closed system so that it is of a uniform color; disposing the distilled or purified precursor and at least one chalcogenide element at a hot section of an open distillation system; dynamically distilling under vacuum in an open system so that the precursor and the at least one chalcogenide element are deposited at a cold section of the open system in a more purified state; homogenizing the precursor and the at least chalcogenide element in a closed system while converting the precursor and the at least one chalcogenide element from crystalline phase to glassy phase.

Inventors: 
Nguyen, Vinh Q.; Sanghera, Jasbinder S.; Aggarwal, Ishwar D.
Patent Number: 
US7418835
Technical domain: 
Materials and Coatings
FIle Date: 
2004-04-15
Grant Date: 
2008-09-02
Grant time: 
1,601 days
Grant time percentile rank: 
29
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Phthalocyanines with peripheral siloxane substitution

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NRL

The present invention is phthalocyanine compounds with peripheral siloxane substitution, as well as methods for making these compounds and various uses thereof, having the basic structure: wherein —W—X—Y—Z are peripheral groups comprising individual W, X, Y, and Z subgroups;W is a linkage represented by the formula: —D—(R1)0.1—, where D═S or O;X is: —(CH2)n—, n=2 to 8;Y is a siloxane chain;Z is an aryl or alkyl terminal cap;M is two protons or a metal ion; and forms a transparent film of high optical quality with large nonlinear absorption and thermal refraction, free of scattering from solid or liquid crystalline domains making them highly suitable for use as the active component in thin films protective eye wear, and optical data storage applications.

Inventors: 
Snow, Arthur W.; Shirk, James S.; Maya, Eva M.; Pong, Richard G. S.; Flom, Steven R.
Patent Number: 
US7550586
Technical domain: 
Materials and Coatings
FIle Date: 
2005-04-12
Grant Date: 
2009-06-23
Grant time: 
1,533 days
Grant time percentile rank: 
28
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polyhedral oligomeric silsesquioxane and carborane containing network polymers

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NRL

A thermoset and method of making such by crosslinking a mixture of a polyhedral oligomeric silsesquioxane having pendent siloxane groups or unsaturated carbon bonds and a siloxylcarborane compound having unsaturated carbon bonds.

Inventors: 
Keller, Teddy M.; Kolel-veetil, Manoj K.
Patent Number: 
US7655738
Technical domain: 
Materials and Coatings
FIle Date: 
2007-08-07
Grant Date: 
2010-02-02
Grant time: 
910 days
Grant time percentile rank: 
16
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Highly conducting transparent thin polymers films formed from double and multiple layers of poly(3,4, ethylenedioxythiophene) and its derivatives

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NRL

A polymer film comprising at least two layers, wherein each layer comprises a compound comprising the formula: wherein R1 and R2 are independently selected organic groups. A method of making a polymer film comprising the steps of: providing a monomer solution comprising one or more monomers comprising the formula: wherein R1 and R2 are independently selected organic groups; dispensing the monomer solution onto a substrate; heating the monomer solution on the substrate to polymerize the monomer; and repeating the steps of providing a monomer solution, dispensing, and heating one or more times, wherein the spin-coating is performed on top of the prior spin-coated layer.

Inventors: 
Martin, Brett; Nikolov, Nikolay; Shashidhar, Ranganathan
Patent Number: 
US7691439
Technical domain: 
Materials and Coatings
FIle Date: 
2006-01-04
Grant Date: 
2010-04-06
Grant time: 
1,553 days
Grant time percentile rank: 
28
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Coating of organic fibers with siloxane-carborane polymers

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NRL

A fiber of linear polymer coated with a siloxane-carborane polymer or a thermoset or ceramic made therefrom. An organic fiber coated with a siloxane-carborane polymer or a thermoset or ceramic made therefrom and a surfactant. An organic fiber coated with a siloxane-carborane polymer made from a hydrosilation reaction of a siloxane-carborane compound containing at least two unsaturated carbon-carbon bonds and a silane compound or a thermoset or ceramic made therefrom. A method of coating a fiber by contacting a fiber to an aqueous solution of a siloxane-carborane polymer and a surfactant or to a solution of a siloxane-carborane polymer in a non-halogenated organic solvent. A method of contacting a fiber to a solution of a siloxane-carborane polymer, drying the coating to a temperature that does not change the polymer to a thermoset or ceramic, and using the dried, coated fiber in a process that requires that the fiber be flexible.

Inventors: 
Keller, Teddy M.; Kolel-veetil, Manoj K.
Patent Number: 
US7723454
Technical domain: 
Materials and Coatings
FIle Date: 
2006-08-30
Grant Date: 
2010-05-25
Grant time: 
1,364 days
Grant time percentile rank: 
25
Claim count percentile rank: 
7
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Highly aromatic compounds and polymers as precursors to carbon nanotube and metal nanoparticle compositions in shaped solids

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NRL

A method of making metal nanoparticles and carbon nanotubes is disclosed. A mixture of a transition metal compound and an aromatic polymer, a precursor of an aromatic polymer, or an aromatic monomer is heated to form a metal nanoparticle composition, optionally containing carbon nanotubes.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew
Patent Number: 
US7819938
Technical domain: 
Materials and Coatings
FIle Date: 
2004-12-22
Grant Date: 
2010-10-26
Grant time: 
2,134 days
Grant time percentile rank: 
39
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor

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NRL

A structure including a Si1-xGex substrate and a distributed Bragg reflector layer disposed directly onto the substrate. The distributed Bragg reflector layer includes a repeating pattern that includes at least one aluminum nitride layer and a second layer having the general formula AlyGa1-yN. Another aspect of the present invention is various devices including this structure. Another aspect of the present invention is directed to a method of forming such a structure comprising providing a Si1-xGex substrate and depositing a distributed Bragg reflector layer directly onto the substrate. Another aspect of the present invention is directed to a photodetector or photovoltaic cell device, including a Si1-xGex substrate device, a group III-nitride device and contacts to provide a conductive path for a current generated across at least one of the Si1-xGex substrate device and the group III-nitride device upon incident light.

Inventors: 
Mastro, Michael A.; Eddy Jr., Charles R.; Akbar, Shahzad
Patent Number: 
US7928471
Technical domain: 
Materials and Coatings
FIle Date: 
2006-12-04
Grant Date: 
2011-04-19
Grant time: 
1,597 days
Grant time percentile rank: 
29
Claim count percentile rank: 
10
Citations percentile rank: 
1
'Cited by' percentile rank: 
2
Assignee: 
US NAVY

Carbosilane polymers and methods for use in analytical and purification applications

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This invention relates generally to a new class of chemoselective polymer materials primarily designed to sorb hydrogen bond basic analytes such as organophosphonate esters (nerve agents and precursors) and nitro-substituted compounds (explosives). In particular, the invention relates to linear polycarbosilane compounds for use in various analytical applications involving sorbent polymer materials, including chromatography, chemical trapping, analyte collection, and chemical sensor applications. These polymers have pendant and terminal aryl, alkyl, alkenyl, and alkynyl groups that are functionalized with halogen substituted alcohol or phenol groups, having the general structure: wherein n is an integer greater than 1;wherein at least one of R1 and R2 is a pendant group having at least one aryl group independently selected from the group consisting of a phenol, a halogen substituted phenol, and an aryl hydrocarbon with a halogen substituted alcohol substitutent, or combinations thereof;wherein any said R1 and R2 aryl groups are attached to said [Si—X—], either directly or through a short hydrocarbon chain;wherein any remaining said R1 or R2 group is a hydrocarbon or carbosilane group;wherein X is a polymer component selected from the group consisting of alkylene, alkenylene, alkynylene, arylene groups, and combinations thereof; andwherein Z1 and Z2 are end groups independently selected from the group consisting of alkyl, alkenyl, alkynyl, aryl, alkyl silanes, aryl silanes, hydroxyl, silicon hydride, alkoxides, phenols, halogen substituted alcohols, halogen substituted phenols, organosilyl, and combinations thereof.

Inventors: 
Mcgill, Robert A.; Houser, Eric J.
Patent Number: 
US7939337
Technical domain: 
Materials and Coatings
FIle Date: 
2006-10-31
Grant Date: 
2011-05-10
Grant time: 
1,652 days
Grant time percentile rank: 
30
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Direct-write laser transfer and processing

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NRL

A device and method for depositing a material of interest onto a receiving substrate includes a first laser and a second laser, a receiving substrate, and a target substrate. The target substrate comprises a laser transparent support having a back surface and a front surface. The front surface has a coating that comprises the source material, which is a material that can be transformed into the material of interest. The first laser can be positioned in relation to the target substrate so that a laser beam is directed through the back surface of the target substrate and through the laser-transparent support to strike the coating at a defined location with sufficient energy to remove and lift the source material from the surface of the support. The receiving substrate can be positioned in a spaced relation to the target substrate so that the source material is deposited at a defined location on the receiving substrate. The second laser is then positioned to strike the deposited source material to transform the source material into the material of interest.

Inventors: 
Piqué, Alberto; Auyeung, Raymond; Fitzgerald, James; Chrisey, Douglas B.; Wu, Huey-daw; Kydd, Paul; Richard, David L.
Patent Number: 
US7014885
Technical domain: 
Materials and Coatings
FIle Date: 
2000-07-19
Grant Date: 
2006-03-21
Grant time: 
2,071 days
Grant time percentile rank: 
38
Claim count percentile rank: 
5
Citations percentile rank: 
2
'Cited by' percentile rank: 
2
Assignee: 
US NAVY

Synthesis of hydrocarbons via catalytic reduction of CO2

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A method of: introducing hydrogen and a feed gas containing at least 50 vol % carbon dioxide into a reactor containing a Fischer-Tropsch catalyst; and heating the hydrogen and carbon dioxide to a temperature of at least about 190° C. to produce hydrocarbons in the reactor. An apparatus having: a reaction vessel for containing a Fischer-Tropsch catalyst, capable of heating gases to at least about 190° C.; a hydrogen delivery system feeding into the reaction vessel; a carbon dioxide delivery system for delivering a feed gas containing at least 50 vol % carbon dioxide feeding into the reaction vessel; and a trap for collecting hydrocarbons generated in the reaction vessel.

Inventors: 
Tran, Nick E.; Hardy, Dennis R.; Lambrakos, Samuel G.; Michopoulos, John G.
Patent Number: 
US8017658
Technical domain: 
Materials and Coatings
FIle Date: 
2007-09-05
Grant Date: 
2011-09-13
Grant time: 
1,469 days
Grant time percentile rank: 
27
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Process of making low loss visible-IR transmitting glass-ceramic spinel composites

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This invention pertains to a process of bonding a magnesium aluminate spinel article or articles and a germanate glass article or articles including the step of heating them together above the softening temperature of the glass.

Inventors: 
Bayya, Shyam S.; Sanghera, Jasbinder S.; Villalobos, Guillermo R.; Chin, Geoff; Aggarwal, Ishwar D.
Patent Number: 
US8266924
Technical domain: 
Materials and Coatings
FIle Date: 
2010-01-14
Grant Date: 
2012-09-18
Grant time: 
978 days
Grant time percentile rank: 
17
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polymers made from polyhedral oligomeric silsesquioxanes acetylene-containing compounds

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NRL

A compound having the formula below. Each R is methyl or phenyl; R2 comprises one or more of silane, siloxane, and aromatic groups; n is a nonnegative integer; and m is 1 or 2. The dashed bond is a single bond and the double dashed bond is a double bond, or the dashed bond is a double bond and the double dashed bond is a triple bond. A polymer made by a hydrosilation reaction of a polyhedral oligomeric silsesquioxane having pendant siloxane groups with an acetylene- and silicon-containing compound having at least two vinyl or ethynyl groups, and a crosslinked polymer thereof. The reaction occurs between the pendant siloxane groups and the vinyl or ethynyl groups.

Inventors: 
Kolel-veetil, Manoj K.; Keller, Teddy M.
Patent Number: 
US8263727
Technical domain: 
Materials and Coatings
FIle Date: 
2012-05-24
Grant Date: 
2012-09-11
Grant time: 
110 days
Grant time percentile rank: 
1
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polymeric compositions containing microspheres

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Disclosed herein is a composition having a thermoset polymer and a plurality of hollow microsphere homogenously dispersed in the composition. The polymer is a cyanate ester thermoset, a phthalonitrile thermoset, a crosslinked acetylene thermoset, or a hydrosilation thermoset. Also disclosed herein is a method of: providing a thermosetting compound; adding microspheres to the thermosetting compound; and mixing the thermosetting compound while initiating crosslinking of the thermosetting compound.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew; Kolel-veetil, Manoj K.
Patent Number: 
US8288454
Technical domain: 
Materials and Coatings
FIle Date: 
2009-08-11
Grant Date: 
2012-10-16
Grant time: 
1,162 days
Grant time percentile rank: 
21
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Magnesium aluminate transparent ceramic having low scattering and absorption loss

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NRL

A ceramic having at least about 90% by weight magnesium aluminate and having a bulk scattering and absorption loss of less than about 1/cm at any wavelength in a range of about 0.23 to about 5.3 microns or 0.2/cm at any wavelength in a range of about 0.27 to about 4.5 microns. A method of making a ceramic by providing a plurality of particles having a magnesium aluminate core and a fluoride salt coating; heating the particles in an oxidizing atmosphere to a temperature in the range of about 400° C. to about 750° C.; and sintering the particles to form a solid ceramic.

Inventors: 
Villalobos, Guillermo E.; Sanghera, Jasbinder S.; Bayya, Shyam; Aggarwal, Ishwar D.
Patent Number: 
US7528086
Technical domain: 
Materials and Coatings
FIle Date: 
2005-03-24
Grant Date: 
2009-05-05
Grant time: 
1,503 days
Grant time percentile rank: 
27
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Transistor with enhanced channel charge inducing material layer and threshold voltage control

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High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.

Inventors: 
Kub, Francis J.; Hobart, Karl D.; Eddy Jr., Charles R.; Mastro, Michael A.; Anderson, Travis
Patent Number: 
US8384129
Technical domain: 
Materials and Coatings
FIle Date: 
2010-06-25
Grant Date: 
2013-02-26
Grant time: 
977 days
Grant time percentile rank: 
17
Claim count percentile rank: 
7
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Preparing electrodes for electroplating

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A method of immersing an electrode in an electroplating solution while under vacuum, to substantially eliminate air and/or other gas from microscopic holes, cavities or indentations in the electrode. A method of electroplating an electrode in an electroplating solution including the application of a vacuum to the electrode while it is immersed in the electroplating solution to thereby substantially eliminate air and/or other gas from microscopic holes, cavities or indentations in the electrode. The electroplating liquid may be applied to only one side of the electrode (“the wet side”) in which case, sufficient time is allowed to pass for the immersion liquid to fill the microscopic through-holes, cavities or indentations in the electrode. An enhancement of this mode is to force liquid through the microscopic holes from the wet side. A highly penetrating solvent may be used as an immersion liquid. Alternatively, carbon dioxide can be used as an immersion liquid, in which case the liquid carbon dioxide may be obtained by adjusting the temperature and pressure conditions in a closed container of gaseous carbon dioxide.

Inventors: 
Perkins, Keith F.; Skeath, Perry; Johnson, Lee; Peele, John; Bassett, William
Patent Number: 
US8404095
Technical domain: 
Materials and Coatings
FIle Date: 
2009-06-02
Grant Date: 
2013-03-26
Grant time: 
1,393 days
Grant time percentile rank: 
25
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polyarylacetylenes containing siloxane, silane, and carborane moieties

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Disclosed herein are the compounds shown below. Each R is an organic group, Cb is a carborane group, and —C6H4— is phenylene. The value of each m is a nonnegative integer, q is 0 or 1, with the proviso that if q is 0 then m is 0 or 1, p is a positive integer, r is a positive integer, and n is an integer greater than or equal to 10. Also disclosed are methods of making and crosslinking the compounds. —{SiR2—([O]q—SiR2)m-[Cb-SiR2—([O]q—SiR2)m]p—C≡C—C6H4—C≡C}— —{SiR2—(O—SiR2)m—C≡C—C6H4—C≡C}n—; —{SiR2—([O]q—SiR2)m—[C≡C—C6H4—C≡C—SiR2—([O]q—SiR2)m]p-Cb-[SiR2—([O]q—SiR2)m-Cb]r}-

Inventors: 
Kolel-veetil, Manoj K.; Keller, Teddy M.
Patent Number: 
US8440850
Technical domain: 
Materials and Coatings
FIle Date: 
2012-03-29
Grant Date: 
2013-05-14
Grant time: 
411 days
Grant time percentile rank: 
7
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method of forming graphene on a surface

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Methods of forming a graphene material on a surface are presented. A metal material is disposed on a material substrate or material layer and is infused with carbon, for example, by exposing the metal to a carbon-containing vapor. The carbon-containing metal material is annealed to cause graphene to precipitate onto the bottom of the metal material to form a graphene layer between the metal material and the material substrate/material layer and also onto the top and/or sides of the metal material. Graphene material is removed from the top and sides of the metal material and then the metal material is removed, leaving only the graphene layer that was formed on the bottom of the metal material. In some cases graphene material that formed on one or more side of the sides of the metal material is not removed so that a vertical graphene material layer is formed.

Inventors: 
Kub, Francis J.; Anderson, Travis; Feygelson, Boris N.
Patent Number: 
US8501531
Technical domain: 
Materials and Coatings
FIle Date: 
2012-04-06
Grant Date: 
2013-08-06
Grant time: 
487 days
Grant time percentile rank: 
8
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Hydrophobic nanostructured thin films

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Provided herein are the polymers shown below. The value n is a positive integer. R1 is an organic group, and each R2 is H or a chemisorbed group, with at least one R2 being a chemisorbed group. The polymer may be a nanostructured film. Also provided herein is a method of: converting a di-p-xylylene paracyclophane dimer to a reactive vapor of monomers; depositing the reactive vapor onto a substrate held at an angle relative to the vapor flux to form nanostructured poly(p-xylylene) film; reacting the film with an agent to form hydrogen atoms that are reactive with a precursor of a chemisorbed group, if the film does not contain the hydrogen atoms; and reacting the hydrogen atoms with the precursor. Also provided herein is a device having a nanostructured poly(p-xylylene) film on a pivotable substrate. The film has directional hydrophobic or oleophobic properties and directional adhesive properties.

Inventors: 
Demirel, Melik C.; Dressick, Walter J.; Singh, Alok
Patent Number: 
US8535805
Technical domain: 
Materials and Coatings
FIle Date: 
2009-04-28
Grant Date: 
2013-09-17
Grant time: 
1,603 days
Grant time percentile rank: 
29
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Nanoporous thin films and multi-functional layers via spatially organized polymers

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A spatially organized polymer nanostructured thin film and a ligand adsorbate attached to the polymer nanostructured thin film and, optionally, an additional material or materials attached to the ligand adsorbate. A method for forming a structure by: providing a spatially organized polymer nanostructured thin film and a ligand adsorbate, and adsorbing the ligand adsorbate onto the thin film and, optionally, binding additional material or materials to the ligand adsorbate.

Inventors: 
Demirel, Melik C.; Singh, Alok K.; Dressick, Walter J.
Patent Number: 
US8603623
Technical domain: 
Materials and Coatings
FIle Date: 
2008-04-24
Grant Date: 
2013-12-10
Grant time: 
2,056 days
Grant time percentile rank: 
37
Claim count percentile rank: 
7
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Hexafluorodimethylcarbinol terminated alkane- and alkenethiols

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A hexafluorodimethylcarbinol terminated compound, method of making it, and a composition of matter are disclosed. The compound may have the formula (CF3)2C(OH)-L-M-R. The substructure L may be selected from an optionally substituted propenylene group (—CH2CH═CH—) and trimethylene group (—CH2CH2CH2—). The substructure M may be selected from a substituted or unsubstituted methylene chain, a substituted or unsubstituted oxyalkylene chain, and a silicon-containing chain or combination thereof. In one embodiment, M may be selected from —(CH2)n—, —(OCH2CH2)m—, and —(Si(CH3)2O)p—Si(CH3)2—(CH2)q—, wherein n is at least 1, e.g., n is up to 10, m can be at least 1, e.g., m is up to 10, p can be 0 and in one embodiment is from 1 to 10, and wherein q can be 1 and in one embodiment is from 1 to 12. The substructure R represents one of a halogen, —SH, —SZ, —S—S-M-L-C(CF3)2(OH), wherein Z represents a thiol protecting group.

Inventors: 
Snow, Arthur W.
Patent Number: 
US8618330
Technical domain: 
Materials and Coatings
FIle Date: 
2009-08-27
Grant Date: 
2013-12-31
Grant time: 
1,587 days
Grant time percentile rank: 
29
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Transistor with enhanced channel charge inducing material layer and threshold voltage control

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High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.

Inventors: 
Kub, Francis J.; Hobart, Karl D.; Eddy Jr., Charles R.; Mastro, Michael A.; Anderson, Travis
Patent Number: 
US8648390
Technical domain: 
Materials and Coatings
FIle Date: 
2013-02-25
Grant Date: 
2014-02-11
Grant time: 
351 days
Grant time percentile rank: 
6
Claim count percentile rank: 
8
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method of producing epitaxial layers with low basal plane dislocation concentrations

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A method of: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxial grow silicon carbide on a wafer in the growth chamber; stopping or reducing the flow of the silicon source gas to interrupt the silicon carbide growth and maintaining the flow of the carrier gas while maintaining an elevated temperature in the growth chamber for a period of time; and resuming the flow of the silicon source gas to reinitiate silicon carbide growth. The wafer remains in the growth chamber throughout the method.

Inventors: 
Stahlbush, Robert E.; Vanmil, Brenda L.; Lew, Kok-keong; Myers-ward, Rachael L.; Gaskill, David Kurt; Eddy Jr., Charles R.
Patent Number: 
US8652255
Technical domain: 
Materials and Coatings
FIle Date: 
2008-10-09
Grant Date: 
2014-02-18
Grant time: 
1,958 days
Grant time percentile rank: 
36
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of metal nanoparticle compositions from metallic and ethynyl compounds

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A process of making metal nanoparticles comprising the steps of: providing a precursor composition comprising at least one metallic compound and at least one organic compound; wherein the organic compound is selected from the group consisting of an ethynyl compound, a metal-ethynyl complex, and combinations thereof, wherein the precursor composition is a liquid or solid at room temperature; and heating the precursor composition under conditions effective to produce metal nanoparticles. A metal nanoparticle composition comprising metal nanoparticles dispersed homogenously in a matrix selected from the group consisting of ethynyl polymer, crosslinked ethynyl polymer, amorphous carbon, carbon nanotubes, carbon nanoparticles, graphite, and combinations thereof.

Inventors: 
Keller, Teddy M.; Qadri, Syed B.
Patent Number: 
US6846345
Technical domain: 
Materials and Coatings
FIle Date: 
2002-07-26
Grant Date: 
2005-01-25
Grant time: 
914 days
Grant time percentile rank: 
16
Claim count percentile rank: 
9
Citations percentile rank: 
1
'Cited by' percentile rank: 
4
Assignee: 
US NAVY

Inorganic particle conjugates

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The ionic conjugates include an inorganic particle electrostatically associated with a macromolecule which can interact specifically with predetermined chemical species or biological targets.

Inventors: 
Anderson, George P.; Mattoussi, Hedi; Mauro, Matthew J.; Bawendi, Moungi G.; Sundar, Vikram C.
Patent Number: 
US6921496
Technical domain: 
Materials and Coatings
FIle Date: 
2001-03-20
Grant Date: 
2005-07-26
Grant time: 
1,589 days
Grant time percentile rank: 
29
Claim count percentile rank: 
8
Citations percentile rank: 
2
'Cited by' percentile rank: 
9
Assignee: 
US NAVY

Simultaneous modulation of quantum dot photoluminescence using orthogonal fluorescence resonance energy transfer (FRET) and charge transfer quenching (CTQ)

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Quantum dots are modified with varying amounts of (a) a redox-active moiety effective to perform charge transfer quenching, and (b) a fluorescent dye effective to perform fluorescence resonance energy transfer (FRET), so that the modified quantum dots have a plurality of photophysical properties. The FRET and charge transfer pathways operate independently, providing for two channels of control for varying luminescence of quantum dots having the same innate properties.

Inventors: 
Medintz, Igor L.; Algar, Russ W.; Stewart, Michael H.; Susumu, Kimihiro
Patent Number: 
US8680506
Technical domain: 
Materials and Coatings
FIle Date: 
2012-04-04
Grant Date: 
2014-03-25
Grant time: 
720 days
Grant time percentile rank: 
13
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of elastomeric carborane-siloxanes by hydrosilation reactions

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A crosslinked polymer and process of making it are disclosed. A copolymer having at least one alkyne group, carborane group, and alkylsiloxane group is reacted with a siloxane crosslinker in a hydrosilation reaction. This produces a crosslinked polymer where the crosslink sites are reacted alkyne groups.

Inventors: 
Keller, Teddy M.; Kolel-veetil, Manoj K.
Patent Number: 
US7153921
Technical domain: 
Materials and Coatings
FIle Date: 
2004-08-18
Grant Date: 
2006-12-26
Grant time: 
860 days
Grant time percentile rank: 
15
Claim count percentile rank: 
9
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Fluoride salt coated magnesium aluminate

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A particle having a magnesium aluminate core and a fluoride salt coating on the core. The particle has been heated in an oxidizing atmosphere to a temperature in the range of about 400° C. to about 750° C. A method of making a particle by mixing a magnesium aluminate core with a solution of a fluoride salt in a solvent to form a slurry and spraying the slurry into a drying column. The slurry enters the column as an aerosol under thermal conditions that avoid boiling the solvent. The thermal conditions in the column evaporate the solvent as the aerosol moves through the column to form a coating of the fluoride salt on the core while substantially avoiding spalling.

Inventors: 
Villalobos, Guollermo R.; Sanghera, Jasbinder S.; Bayya, Shyam; Aggarwal, Ishwar D.
Patent Number: 
US7211325
Technical domain: 
Materials and Coatings
FIle Date: 
2005-03-24
Grant Date: 
2007-05-01
Grant time: 
768 days
Grant time percentile rank: 
14
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Biological laser printing via indirect photon-biomaterial interactions

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A method of laser forward transfer is disclosed. Photon energy is directed through a photon-transparent support and absorbed by an interlayer coated thereon. The energized interlayer causes the transfer of a biological material coated thereon across a gap and onto a receiving substrate.

Inventors: 
Barron, Jason; Ringeisen, Bradley R.; Kim, Heungsoo; Wu, Peter
Patent Number: 
US7294367
Technical domain: 
Materials and Coatings
FIle Date: 
2004-06-04
Grant Date: 
2007-11-13
Grant time: 
1,257 days
Grant time percentile rank: 
23
Claim count percentile rank: 
12
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Biological laser printing for tissue microdissection via indirect photon-biomaterial interactions

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A method of laser forward transfer is disclosed. Photo energy is directed through a photon-transparent support and absorbed by an interlayer coated thereon. The energized interlayer causes the transfer of specific regions of a heterogeneous tissue sample coated thereon across a gap and onto a receiving substrate or into a receiving vessel.

Inventors: 
Ringeisen, Bradley R.; Barron, Jason; Wu, Peter; Krizman, David B.; Darfler, Marlene M.
Patent Number: 
US7381440
Technical domain: 
Materials and Coatings
FIle Date: 
2004-06-04
Grant Date: 
2008-06-03
Grant time: 
1,460 days
Grant time percentile rank: 
26
Claim count percentile rank: 
10
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
EXPRESSION PATHOLOGY INC

LiF-coated doped and undoped yttrium oxide

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An embodiment of the invention includes a particle. The particle includes a first yttria core; and a fluoride salt coating on the first yttria core. The coating is sufficiently continuous to prevent a large number of sites where a second yttria core may come into contact with the first yttria core. Optionally, the particle has been heated in an oxidizing atmosphere to a temperature in the range of about 400° C. to about 750° C. Optionally, the particle is substantially free of at least one of carbon-containing species and water. Optionally, the fluoride salt is lithium fluoride. Optionally, the fluoride salt is aluminum fluoride.

Inventors: 
Villalobos, Guillermo R.; Sanghera, Jasbinder S.; Bayya, Shyam; Aggarwal, Ishwar D.; Kim, Woohong; Sadowski, Bryan
Patent Number: 
US7449238
Technical domain: 
Materials and Coatings
FIle Date: 
2007-09-26
Grant Date: 
2008-11-11
Grant time: 
412 days
Grant time percentile rank: 
7
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

High-temperature interband cascade lasers

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A gain medium and an interband cascade laser, an interband cascade amplifier, and an external cavity laser having the gain medium are presented. The gain medium can include any one or more of the following features: (1) the active quantum well region includes a thick and In-rich GaInSb hole well; (2) the hole injector includes two or more GaSb hole wells having thicknesses in a specified range; (3) the electron and hole injectors are separated by a thick AlSb barrier to suppress interband absorption; (4) a first electron barrier of the hole injector region separating the hole injector region from an adjacent active quantum well region has a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states to not more than 5%; (5) the thickness of the first InAs electron well in the electron injector, as well as the total thickness of the electron injector, is reduced; (6) the number of cascaded stages is reduced; (7) transition regions are inserted at the interfaces between the various regions of the gain medium so as to smooth out abrupt shifts of the conduction-band minimum; (8) thick separate confinement layers comprising Ga(InAlAs)Sb are disposed between the active gain region and the cladding to confine the optical mode and increase its overlap with the active stages; and (9) the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AlSb SL cladding layers. An interband cascade laser, an interband cascade amplifier, or an external cavity laser employing a gain medium having these features can emit at a wavelength of about 2.5 μm to about 8 μm at high temperatures.

Inventors: 
Vurgaftman, Igor; Meyer, Jerry R.; Canedy, Chadwick L.; Bewley, William W.; Lindle, James R.; Kim, Chul-soo; Kim, Mijin
Patent Number: 
US8125706
Technical domain: 
Materials and Coatings
FIle Date: 
2009-03-12
Grant Date: 
2012-02-28
Grant time: 
1,083 days
Grant time percentile rank: 
19
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Technique for perfecting the active regions of wide bandgap semiconductor nitride devices

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This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

Inventors: 
Henry, Richard L.; Peckerar, Martin C.; Koleske, Daniel D.; Wickenden, Alma E.; Eddy Jr., Charles R.; Holm, Ronald T.; Twigg, Mark E.
Patent Number: 
US7470989
Technical domain: 
Materials and Coatings
FIle Date: 
2006-08-02
Grant Date: 
2008-12-30
Grant time: 
881 days
Grant time percentile rank: 
16
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Wafer bonding of thinned electronic materials and circuits to high performance substrates

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NRL

A method of bonding a wafer to a substrate comprising the steps of: providing a wafer having a front surface and a back surface; attaching the front surface of the wafer to a support; thinning the wafer from the back surface; bonding the back surface of the wafer to a substrate using a thin bonding technique; and removing the support from the front surface of the wafer. A circuit comprising: a substrate; and a wafer; wherein the wafer is at most about 50 microns thick; wherein the wafer has a front surface comprising features; and wherein the wafer has a back surface bonded to the substrate using a thin bonding technique.

Inventors: 
Kub, Francis J.; Hobart, Karl D.
Patent Number: 
US7535100
Technical domain: 
Materials and Coatings
FIle Date: 
2003-05-20
Grant Date: 
2009-05-19
Grant time: 
2,191 days
Grant time percentile rank: 
40
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
3
Assignee: 
US NAVY

Applications of the binding interaction of proanthocyanidins with bacteria and bacterial components

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A composition having: a proanthocyanidin; and a macromolecule, an assembly of macromolecules, a semi-solid, or a solid surface to which the proanthocyanidin is immobilized.

Inventors: 
Delehanty, James B.; White, Brandy J.; Lin, Baochuan; Ligler, Frances S.
Patent Number: 
US8715949
Technical domain: 
Materials and Coatings
FIle Date: 
2007-08-02
Grant Date: 
2014-05-06
Grant time: 
2,469 days
Grant time percentile rank: 
45
Claim count percentile rank: 
6
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method for fluoride salt coated magnesium aluminate

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NRL

A particle having a magnesium aluminate core and a fluoride salt coating on the core. The particle has been heated in an oxidizing atmosphere to a temperature in the range of about 400° C. to about 750° C. A method of making a particle by mixing a magnesium aluminate core with a solution of a fluoride salt in a solvent to form a slurry and spraying the slurry into a drying column. The slurry enters the column as an aerosol under thermal conditions that avoid boiling the solvent. The thermal conditions in the column evaporate the solvent as the aerosol moves through the column to form a coating of the fluoride salt on the core while substantially avoiding spalling.

Inventors: 
Villalobos, Guillermo R.; Sanghera, Jasbinder S.; Bayya, Shyam; Aggarwal, Ishwar D.
Patent Number: 
US7563480
Technical domain: 
Materials and Coatings
FIle Date: 
2006-09-18
Grant Date: 
2009-07-21
Grant time: 
1,037 days
Grant time percentile rank: 
19
Claim count percentile rank: 
4
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Spinel and process for making same

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NRL

This invention pertains to product and process. The product is a transparent product of a density in excess 99.5% comprising spinel and having uniform mechanical properties. The process pertains to fabrication of a transparent spinel product comprising the steps of dissolving a sintering aid in water to form a neutral sintering aid solution, adding a suitable additive to the sintering aid solution, applying the sintering aid solution to spinel particles to form a spinel dispersion, sub-dividing or atomizing the spinel dispersion to form droplets comprising one or more spinel particles coated with the final spinel solution, drying the droplets to form dried coated particles comprising one or more spinel particles coated with a dried layer of the sintering aid, and densifying the dried coated particles to form a transparent spinel product having, uniform optical and mechanical properties in absence of grains of exaggerated size.

Inventors: 
Villalobos, Guillermo R.; Sanghera, Jas S.; Bayya, Shyam S.; Aggarwal, Ishwar D.
Patent Number: 
US7611661
Technical domain: 
Materials and Coatings
FIle Date: 
2005-03-24
Grant Date: 
2009-11-03
Grant time: 
1,685 days
Grant time percentile rank: 
31
Claim count percentile rank: 
1
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polyenureas and method of making the same

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A method of making a polymer by providing an imine and reacting the imine with a polyisocyanate in the presence of a hydroxyl group. The imine is a polyaldimine, hydroxyaldimine, polyketimine, or hydroxyketimines. The polymer has urea linkages formed from the imine and polyisocyanate and urethane linkages formed from the hydroxyl group and the polyisocyanate. The polymer has at least as many urea linkages as urethane linkages. A polymer having urea units and urethane units having a molar ratio of at least about 2:1. A polymer comprising a urea-urethane repeat unit.

Inventors: 
Verborgt, Jozef; Webb, Arthur
Patent Number: 
US8735526
Technical domain: 
Materials and Coatings
FIle Date: 
2005-09-15
Grant Date: 
2014-05-27
Grant time: 
3,176 days
Grant time percentile rank: 
58
Claim count percentile rank: 
6
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Selective membranes/thin films for analytical applications

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Disclosed herein is a composition having: a polymer having a carbosilane or siloxane backbone and pendant hydrogen-bond acidic groups; and a filler material having polar groups. The polymer is not covalently bound to the filler material.

Inventors: 
Higgins, Bernadette A.; Simonson, Duane L.; Nguyen, Viet; Stepnowski, Jennifer L.; Mcgill, Andrew R.
Patent Number: 
US8148161
Technical domain: 
Materials and Coatings
FIle Date: 
2009-05-01
Grant Date: 
2012-04-03
Grant time: 
1,068 days
Grant time percentile rank: 
19
Claim count percentile rank: 
7
Citations percentile rank: 
3
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polymeric material made from siloxane-acetylene polymer containing metal-acetylene complex

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NRL

A metallized polymer having a backbone having an acetylenic repeat unit and —SiR2—(O—SiR2)n— and/or —SiR2—(O—SiR2)n-[Cb-SiR2—(O—SiR2)n]m—. At least one of the acetylenic repeat units contains a (MLx)y-acetylene complex. M is a metal, L is a ligand, x and y are positive integers, R is an organic group, Cb is a carborane, and n and m are greater than or equal to zero. A composition containing a siloxane polymer and a metallic compound. The siloxane polymer has a backbone having one or more acetylene groups and —SiR2—(O—SiR2)n— and/or —SiR2—(O—SiR2)n-[Cb-SiR2—(O—SiR2)n]m—. The metallic compound is capable of reacting with the acetylene group to form a (MLx)y-acetylene complex.

Inventors: 
Keller, Teddy M.; Kolel-veetil, Manoj
Patent Number: 
US7579430
Technical domain: 
Materials and Coatings
FIle Date: 
2005-09-27
Grant Date: 
2009-08-25
Grant time: 
1,428 days
Grant time percentile rank: 
26
Claim count percentile rank: 
7
Citations percentile rank: 
3
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polyurethane coating

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A polyurethane coating made by: applying to a surface a polyol composition and an isocyanate composition, such that a mixture of the polyol composition and the isocyanate composition is formed during the application; and allowing the mixture to cure to the polyurethane coating. The polyol composition has a polyol monomer having the chemical formula: R1 is a divalent radical selected from aliphatic, aromatic, and ether-containing group. R2 is a monovalent radical selected from aliphatic, aromatic, ester-containing group, ether-containing group, and acrylic-containing group. R2 is free of —O—CH2—CH(OH)— groups, and the polyol monomer is free of epoxy groups and amino hydrogens. The isocyanate composition comprises an isocyanate compound having at least two isocyanate groups. The polyol composition or the isocyanate composition comprises a water scavenger. The polyol composition or the isocyanate composition comprises a polyurethane catalyst.

Inventors: 
Verborgt, Jozef; Webb, Arthur A.
Patent Number: 
US7622541
Technical domain: 
Materials and Coatings
FIle Date: 
2007-07-26
Grant Date: 
2009-11-24
Grant time: 
852 days
Grant time percentile rank: 
15
Claim count percentile rank: 
6
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors

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This invention pertains to heterojunction bipolar transistors containing a semiconductor substrate, a buffer layer of an antimony-based material deposited on the substrate, a sub-collector layer of an antimony-based material deposited on the buffer layer, a collector layer of an antimony-based material deposited on the sub-collector layer, a base layer of an antimony-based material deposited on the collector layer, an emitter layer of an antimony-based material deposited on the base layer, and a cap layer of an antimony-based material deposited on the emitter layer.

Inventors: 
Boos, John Bradley; Bennett, Brian R.; Campbell, Paul; Magno, Richard
Patent Number: 
US7635879
Technical domain: 
Materials and Coatings
FIle Date: 
2005-09-20
Grant Date: 
2009-12-22
Grant time: 
1,554 days
Grant time percentile rank: 
28
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Carbon nanoarchitectures with ultrathin, conformal polymer coatings for electrochemical capacitors

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A composite having an electroactive polymer coating on a porous carbon structure is disclosed. The composite may be used in capacitor electrodes. The composite may be made by self-limiting electropolymerization of a monomer on the carbon structure.

Inventors: 
Long, Jeffrey W.; Rolison, Debra R.
Patent Number: 
US7672114
Technical domain: 
Materials and Coatings
FIle Date: 
2007-07-06
Grant Date: 
2010-03-02
Grant time: 
970 days
Grant time percentile rank: 
17
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Formulation for dust abatement and prevention of erosion

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A composition of matter containing a solution made from: from about 18 to about 70 wt % of a sugar; from about 2 to about 10 wt % of a water-soluble polysaccharide; from about 0.1 to about 1 wt % of a phosphate; from about 0.01 to about 1 wt % of a surfactant; and from about 18 wt % to remainder of water. A method for dust and sand abatement and erosion prevention by: providing the above solution, applying the solution to sand or dust particles wherein the solution binds to the particles; and allowing the solution to bind to the sand or dust particles and to dry thereby forming a hardened crust.

Inventors: 
Wynne, James; Spargo, Barry; Lloyd, Christopher; Laplante, Marc
Patent Number: 
US7682519
Technical domain: 
Materials and Coatings
FIle Date: 
2006-02-28
Grant Date: 
2010-03-23
Grant time: 
1,484 days
Grant time percentile rank: 
27
Claim count percentile rank: 
4
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Pyrolytic formation of metallic nanoparticles

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A method and a ceramic made therefrom by: providing a composition of a compound having the formula below and a metallic component, and pyrolyzing the composition. R is an organic group. The value n is a positive integer. Q is an acetylenic repeat unit having an acetylene group, crosslinked acetylene group, (MLx)y-acetylene complex, and/or crosslinked (MLx)y-acetylene complex. M is a metal. L is a ligand. The values x and y are positive integers. The metallic component is the (MLx)y-acetylene complex in the compound or a metallic compound capable of reacting with the acetylenic repeat unit to form the (MLx)y-acetylene complex. The ceramic comprises metallic nanoparticles.

Inventors: 
Keller, Teddy M.; Kolel-veetil, Manoj K.; Qadri, Syed B.
Patent Number: 
US7700710
Technical domain: 
Materials and Coatings
FIle Date: 
2008-03-19
Grant Date: 
2010-04-20
Grant time: 
762 days
Grant time percentile rank: 
13
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Nanoporous organosilicas as pre-concentration materials for sensors

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A molecularly imprinted material made from polymerizing a monomer having the structural formula (OR)3Si—B-A-B—Si(OR)3. A is a divalent organic group, B is a saturated or unsaturated divalent hydrocarbon group or a covalent bond, and R is an independently selected saturated or unsaturated monovalent hydrocarbon group. A preconcentrator having: a container comprising in inlet and an outlet and the above material within the container. The inlet is capable of allowing a fluid to enter the container. The outlet is capable of being coupled to a sensor and of allowing the fluid to exit the container.

Inventors: 
Markowitz, Michael; Zeinali, Mazyar; Trammell, Scott; Charles, Paul
Patent Number: 
US7705062
Technical domain: 
Materials and Coatings
FIle Date: 
2006-01-31
Grant Date: 
2010-04-27
Grant time: 
1,547 days
Grant time percentile rank: 
28
Claim count percentile rank: 
5
Citations percentile rank: 
3
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material

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A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.

Inventors: 
Kub, Francis J.; Anderson, Travis J.; Mastro, Michael A.; Eddy Jr., Charles R.; Hite, Jennifer K.
Patent Number: 
US9018056
Technical domain: 
Materials and Coatings
FIle Date: 
2014-01-31
Grant Date: 
2015-04-28
Grant time: 
452 days
Grant time percentile rank: 
8
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polyhedral oligomeric silsesquioxane and carborane containing network polymers

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A thermoset and method of making such by crosslinking a mixture of a polyhedral oligomeric silsesquioxane having pendent siloxane groups or unsaturated carbon bonds and a siloxylcarborane compound having unsaturated carbon bonds.

Inventors: 
Keller, Teddy M.; Kolel-veetil, Manoj K.
Patent Number: 
US8097683
Technical domain: 
Materials and Coatings
FIle Date: 
2010-01-25
Grant Date: 
2012-01-17
Grant time: 
722 days
Grant time percentile rank: 
13
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Low loss chalcogenide glass fiber

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This invention pertains to a chalcogenide glass of low optical loss that can be on the order of 30 dB/km or lower, and to a process for preparing the chalcogenide glass. The process includes the steps of optionally preparing arsenic monochalcogenide precursor or the precursor can be provided beforehand; dynamically distilling the precursor in an open system under vacuum from a hot section to a cold section to purify same; homogenizing the precursor in a closed system so that it is of a uniform color; disposing the distilled or purified precursor and at least one chalcogenide element at a hot section of an open distillation system; dynamically distilling under vacuum in an open system so that the precursor and the at least one chalcogenide element are deposited at a cold section of the open system in a more purified state; homogenizing the precursor and the at least chalcogenide element in a closed system while converting the precursor and the at least one chalcogenide element from crystalline phase to glassy phase.

Inventors: 
Nguyen, Vinh Q.; Sanghera, Jasbinder S.; Aggarwal, Ishwar D.
Patent Number: 
US7807595
Technical domain: 
Materials and Coatings
FIle Date: 
2008-07-31
Grant Date: 
2010-10-05
Grant time: 
796 days
Grant time percentile rank: 
14
Claim count percentile rank: 
3
Citations percentile rank: 
2
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Formulation for dust abatement and prevention of erosion

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A safe, biodegradable, environmentally benign, non-toxic, water-soluble solution consisting of water, sugar, starch, sodium phosphate, and surfactant that can be applied to dust and sand particles to bind the particles and form a hardened crust. Also disclosed is the related method for abating dust and preventing erosion.

Inventors: 
Wynne, James H.; Spargo, Barry J.; Lloyd, Christopher T.; Schultz, Warren W.
Patent Number: 
US7854857
Technical domain: 
Materials and Coatings
FIle Date: 
2009-10-30
Grant Date: 
2010-12-21
Grant time: 
417 days
Grant time percentile rank: 
7
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method for activating nitride surfaces for amine-reactive chemistry

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Provided is a method for controllably activating a surface for stable amine-reactive chemistries. A surface containing nitride is exposed to a plasma having a reactive species containing hydrogen for a period of time sufficient to activate the substrate for amine-reactive chemistries. Amine-reactive chemical processes can then be applied to the activated surface to reliably and controllably bond molecules directly to said surface. The method is designed to create stable primary amines on the nitride substrate, so that any subsequent amine-reactive chemistry may proceed in a controlled manner that is directly proportional to the density of surface amines so created.

Inventors: 
Cole, Christina L.; Whitman, Lloyd J.
Patent Number: 
US7867915
Technical domain: 
Materials and Coatings
FIle Date: 
2006-06-16
Grant Date: 
2011-01-11
Grant time: 
1,670 days
Grant time percentile rank: 
30
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Biological laser printing via indirect photon-biomaterial interactions

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A method of laser forward transfer is disclosed. Photon energy is directed through a photon-transparent support and absorbed by a polymer interlayer coated thereon. The energized interlayer causes the transfer of a biological material coated thereon across a gap and onto a receiving substrate.

Inventors: 
Barron, Jason; Ringeisen, Bradley R.; Kim, Heungsoo; Wu, Peter K.
Patent Number: 
US7875324
Technical domain: 
Materials and Coatings
FIle Date: 
2007-08-30
Grant Date: 
2011-01-25
Grant time: 
1,244 days
Grant time percentile rank: 
22
Claim count percentile rank: 
7
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Process and System for producing synthetic liquid hydrocarbon fuels

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A process for producing synthetic hydrocarbons that reacts carbon dioxide, obtained from seawater of air, and hydrogen obtained from water, with a catalyst in a chemical process such as reverse water gas shift combined with Fischer Tropsch synthesis. The hydrogen is produced by nuclear reactor electricity, nuclear waste heat conversion, ocean thermal energy conversion, or any other source that is fossil fuel-free, such as wind or wave energy. The process can be either land based or sea based.

Inventors: 
Hardy, Dennis R.; Coffey, Timothy
Patent Number: 
US7420004
Technical domain: 
Materials and Coatings
FIle Date: 
2005-04-12
Grant Date: 
2008-09-02
Grant time: 
1,239 days
Grant time percentile rank: 
22
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
6
Assignee: 
US NAVY

Synthesis of elastomeric poly(carborane-siloxane-acetelyene)S

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A linear polymer comprising carborane, siloxane, and acetylene units, which may be cross-linked to a cured polymer and/or pyrolyzed to a ceramic.

Inventors: 
Keller, Teddy M.; Kolel-veetil, Manoj K.
Patent Number: 
US7923523
Technical domain: 
Materials and Coatings
FIle Date: 
2009-12-09
Grant Date: 
2011-04-12
Grant time: 
489 days
Grant time percentile rank: 
8
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Low loss visible-IR transmitting glass-aluminum oxynitride composites and process

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This invention pertains to a composite of AlON and a germanate glass, and to a process for bonding AlON to the glass. The composite includes AlON and glass bonded together and having transmission in the visible and mid-infrared wavelength region. The process includes the step of heating them together above the softening temperature of the glass, the composite having excellent, i.e., typically in excess of about 60%, transmission in the 0.4-5 wavelength region.

Inventors: 
Bayya, Shyam S.; Sanghera, Jasbinder S.; Villalobos, Guillermo; Chin, Geoffrey; Aggarwal, Ishwar D.
Patent Number: 
US7927705
Technical domain: 
Materials and Coatings
FIle Date: 
2005-10-13
Grant Date: 
2011-04-19
Grant time: 
2,014 days
Grant time percentile rank: 
37
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Aromatic ether and alkynyl containing phthalonitriles

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Compounds having the formulas below. R is an aromatic-containing group. Each M is an alkali metal. Each m is a positive integer. The value of n is a positive integer. The value p is 0 or 1. If p is 0 then n is 1. A thermoset made by curing a composition containing the below phthalonitrile monomers. A method of reacting a diphenyl acetylene compound with an excess of an aromatic diol in the presence of an alkali metal carbonate to form the above oligomer. A method of reacting a phenoxyphthalonitrile with an acetylene compound to form the phthalonitrile monomer below.

Inventors: 
Laskoski, Matthew; Keller, Teddy M.
Patent Number: 
US8039576
Technical domain: 
Materials and Coatings
FIle Date: 
2007-09-06
Grant Date: 
2011-10-18
Grant time: 
1,503 days
Grant time percentile rank: 
27
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polymers made from polyhedral oligomeric silsesquioxanes and diacetylene-containing compounds

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A compound having the formula below. Each R is methyl or phenyl; R2 comprises one or more of silane, siloxane, and aromatic groups; n is a nonnegative integer; and m is 1 or 2. The dashed bond is a single bond and the double dashed bond is a double bond, or the dashed bond is a double bond and the double dashed bond is a triple bond. A polymer made by a hydrosilation reaction of a polyhedral oligomeric silsesquioxane having pendant siloxane groups with an acetylene- and silicon-containing compound having at least two vinyl or ethynyl groups, and a crosslinked polymer thereof. The reaction occurs between the pendant siloxane groups and the vinyl or ethynyl groups.

Inventors: 
Kolel-veetil, Manoj K.; Keller, Teddy M.
Patent Number: 
US8026331
Technical domain: 
Materials and Coatings
FIle Date: 
2009-04-21
Grant Date: 
2011-09-27
Grant time: 
889 days
Grant time percentile rank: 
16
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Gate after diamond transistor

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A gate after diamond transistor and method of making comprising the steps of depositing a first dielectric layer on a semiconductor substrate, depositing a diamond particle nucleation layer on the first dielectric layer, growing a diamond thin film layer on the first dielectric layer, defining an opening for the gate in the diamond thin film layer, patterning of the diamond thin film layer for a gate metal to first dielectric layer surface, etching the first dielectric layer, depositing and defining a gate metal, and forming a contact window opening in the diamond thin film layer and the first dielectric layer to the ohmic contact.

Inventors: 
Kub, Francis; Hobart, Karl
Patent Number: 
US8039301
Technical domain: 
Materials and Coatings
FIle Date: 
2008-12-05
Grant Date: 
2011-10-18
Grant time: 
1,047 days
Grant time percentile rank: 
19
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Etching agent for type II InAs/GaInSb superlattice epitaxial materials

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This disclosure involves a formula, mixing procedure, etching technique and application of an etchant for revealing defects in T2SL's grown lattice matched to (100) GaSb. The etching agent comprises a (2.5:4.5:16.5:280) solution by volume or (1%:2%:9%:88%) by weight, of HF:H2O2:H2SO4:H2O. The etchant is made by mixing (49%) hydrofluoric aqueous solution with (30%) water-based peroxide, followed by sulfuric acid, and diluted with de-ionized H2O (DI-water).

Inventors: 
Aifer, Edward H.; Maximenko, Sergey I.
Patent Number: 
US8685273
Technical domain: 
Materials and Coatings
FIle Date: 
2012-11-06
Grant Date: 
2014-04-01
Grant time: 
511 days
Grant time percentile rank: 
9
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Process of making a nematic elastomer fiber with mechanical properties of a muscle

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A method of making a liquid crystalline fiber is disclosed. A copolymer having a liquid crystalline side group and a crosslinking side group is crosslinked. A fiber of the crosslinking copolymer is drawn before the crosslinking reaction is complete.

Inventors: 
Naciri, Jawad; Jeon, Hong; Keller, Patrick N.; Ratna, Banahalli R.
Patent Number: 
US8105519
Technical domain: 
Materials and Coatings
FIle Date: 
2010-07-29
Grant Date: 
2012-01-31
Grant time: 
551 days
Grant time percentile rank: 
10
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polymerizable sulfonate ionic liquids and liquid polymers therefrom and methods of making same

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Disclosed is a new ionic liquid monomer salt and methods of is synthesis and polymerization. The ionic liquid monomer salt is prepared by mixing equimolar amounts of an amine, such as tris[2-(2-methoxyethoxy)-ethyl]amine and an acid functionalized polymerizable monomer, such as 2-acrylamido-2-methyl-1-propanesulfonic acid, which is stirred at ambient temperature until salt formation is complete. Also disclosed is a new ionic liquid polymer salts and method for making the same. The synthesis of 2-acrylamido-2-methyl-1-propanesulfonic acid-ammonium salt polymer is accomplished by adding 2,2′-azobisisobutyronitrile (AIBN) to the ionic liquid monomer salt and heating the homogeneous melt at 70° C. for 18 hr.

Inventors: 
Ricks-laskoski, Holly L.; Snow, Arthur W.
Patent Number: 
US8134024
Technical domain: 
Materials and Coatings
FIle Date: 
2010-10-05
Grant Date: 
2012-03-13
Grant time: 
525 days
Grant time percentile rank: 
9
Claim count percentile rank: 
1
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

GaN whiskers and methods of growing them from solution

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Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.

Inventors: 
Feigelson, Boris N.; Hite, Jennifer K.; Kub, Francis J.; Eddy Jr., Charles R.
Patent Number: 
US8679248
Technical domain: 
Materials and Coatings
FIle Date: 
2010-11-23
Grant Date: 
2014-03-25
Grant time: 
1,218 days
Grant time percentile rank: 
22
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Methods of preparing metal carbides

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The present embodiments relate methods of preparing metal carbides, for example some embodiments relate to methods of preparing metal carbides that do not contain the formation of an intermediate oxide compound. Some embodiments relate to methods that do not employ hydrocarbons in the reaction. Some embodiments relate to a method of preparing metal carbides that involves citrate gel precursors and a non-hydrocarbon gas but does not use a hydrocarbon gas, does not form an oxide intermediate species and does not produce carbon monoxide. In some embodiments, the metal carbides are transition metal carbides.

Inventors: 
Lyons, Karen Swider; Stux, Arnold M.
Patent Number: 
US8158094
Technical domain: 
Materials and Coatings
FIle Date: 
2009-05-12
Grant Date: 
2012-04-17
Grant time: 
1,071 days
Grant time percentile rank: 
19
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Low loss visible-IR transmitting glass-aluminum oxynitride composites and process

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NRL

This invention pertains to a composite of AlON and a germanate glass, and to a process for bonding AlON to the glass. The composite includes AlON and glass bonded together and having transmission in the visible and mid-infrared wavelength region. The process includes the step of heating them together above the softening temperature of the glass, the composite having excellent, i.e., typically in excess of about 60%, transmission in the 0.4-5 wavelength region.

Inventors: 
Bayya, Shyam S.; Sanghera, Jasbinder S.; Villalobos, Guillermo; Chin, Geoffrey; Aggarwal, Ishwar D.
Patent Number: 
US8221887
Technical domain: 
Materials and Coatings
FIle Date: 
2011-03-14
Grant Date: 
2012-07-17
Grant time: 
491 days
Grant time percentile rank: 
8
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polymers made from polyhedral oligomeric silsesquioxanes and diacetylene-containing compounds

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NRL

A compound having the formula. Each R is methyl or phenyl; R2 comprises one or more of silane, siloxane, and aromatic groups; n is a nonnegative integer; and m is 1 or 2. The dashed bond is a single bond and the double dashed bond is a double bond, or the dashed bond is a double bond and the double dashed bond is a triple bond. A polymer made by a hydrosilation reaction of a polyhedral oligomeric silsesquioxane having pendant siloxane groups with an acetylene- and silicon-containing compound having at least two vinyl or ethynyl groups, and a crosslinked polymer thereof. The reaction occurs between the pendant siloxane groups and the vinyl or ethynyl groups.

Inventors: 
Kolel-veetil, Manoj K.; Keller, Teddy M.
Patent Number: 
US8211994
Technical domain: 
Materials and Coatings
FIle Date: 
2011-08-17
Grant Date: 
2012-07-03
Grant time: 
321 days
Grant time percentile rank: 
5
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Multifunctional metal-chelating ligands

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Disclosed herein are the compounds shown below and methods of their synthesis. The value m is a positive integer. R comprises an alkyl chain or an alkoxy chain. Each X comprises a metal binding group. Each E is a methoxy group or comprises a biomolecule reactive group or a residue thereof. E optionally comprises a protecting group. The value n is a positive integer. The value p is zero or one. Y is OCH3, OH, NH2, or COOH.

Inventors: 
Stewart, Michael; Susumu, Kimihiro; Mei, Bing C.; Mattoussi, Hedi M.
Patent Number: 
US8263639
Technical domain: 
Materials and Coatings
FIle Date: 
2010-04-21
Grant Date: 
2012-09-11
Grant time: 
874 days
Grant time percentile rank: 
16
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Composite for controlled release of small molecules in aquatic environments

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A composite material formulated for slow release of a small molecule in seawater includes a porous inorganic oxide framework and micelles embedded within the pores of the framework. The micelles include a surfactant and a small molecule, the surfactant being present in the composite material at no more than 80 parts by weight per 100 parts by weight inorganic oxide, the composite material being stable in seawater for releasing the small molecule over at least 20 days.

Inventors: 
Melde, Brian; Markowitz, Michael A.
Patent Number: 
US8283027
Technical domain: 
Materials and Coatings
FIle Date: 
2010-06-11
Grant Date: 
2012-10-09
Grant time: 
851 days
Grant time percentile rank: 
15
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Interband cascade lasers

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NRL

A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.

Inventors: 
Vurgaftman, Igor; Meyer, Jerry R.; Canedy, Chadwick L.; Bewley, William W.; Lindle, James R.; Kim, Chul-soo; Kim, Mijin
Patent Number: 
US8290011
Technical domain: 
Materials and Coatings
FIle Date: 
2011-02-09
Grant Date: 
2012-10-16
Grant time: 
615 days
Grant time percentile rank: 
11
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Interband cascade lasers

Patent image
NRL

A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.

Inventors: 
Vurgaftman, Igor; Meyer, Jerry R.; Canedy, Chadwick Lawrence; Bewley, William W.; Lindle, James R.; Kim, Chul Soo; Kim, Mijin
Patent Number: 
US8385378
Technical domain: 
Materials and Coatings
FIle Date: 
2012-09-10
Grant Date: 
2013-02-26
Grant time: 
169 days
Grant time percentile rank: 
2
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Fluoroalkyl carbinol generating silane surface treatment agents

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NRL

The compound is a silane surface treatment agent and is useful for modifying the surfaces of silicon oxide and other metal oxides with hexafluorodimethyl carbinol functional groups. Additionally provided is a surface treatment procedure that effectively bonds it and other alkoxysilanes via homogeneous and heterogeneous amine catalysis onto metal oxide surfaces.

Inventors: 
Snow, Arthur W.; Foos, Edward E.
Patent Number: 
US8420843
Technical domain: 
Materials and Coatings
FIle Date: 
2010-05-17
Grant Date: 
2013-04-16
Grant time: 
1,065 days
Grant time percentile rank: 
19
Claim count percentile rank: 
1
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of hydrocarbons via catalytic reduction of CO2

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NRL

A method of: introducing hydrogen and a feed gas containing at least 50 vol % carbon dioxide into a reactor containing a Fischer-Tropsch catalyst; and heating the hydrogen and carbon dioxide to a temperature of at least about 190° C. to produce hydrocarbons in the reactor. An apparatus having: a reaction vessel for containing a Fischer-Tropsch catalyst, capable of heating gases to at least about 190° C.; a hydrogen delivery system feeding into the reaction vessel; a carbon dioxide delivery system for delivering a feed gas containing at least 50 vol % carbon dioxide feeding into the reaction vessel; and a trap for collecting hydrocarbons generated in the reaction vessel.

Inventors: 
Tran, Nick E.; Hardy, Dennis R.; Lambrakos, Samuel G.; Michopoulos, John G.
Patent Number: 
US8435457
Technical domain: 
Materials and Coatings
FIle Date: 
2011-07-13
Grant Date: 
2013-05-07
Grant time: 
664 days
Grant time percentile rank: 
12
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Formation of boron carbide-boron nitride carbon compositions

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NRL

A composition having nanoparticles of a boron carbide and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising boron and an organic component. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining boron and an organic compound having a char yield of at least 60% by weight, and heating to form boron carbide or boron nitride nanoparticles.

Inventors: 
Keller, Teddy M.; Saab, Andrew; Laskoski, Matthew; Qadri, Syed B.
Patent Number: 
US8815381
Technical domain: 
Materials and Coatings
FIle Date: 
2013-02-28
Grant Date: 
2014-08-26
Grant time: 
544 days
Grant time percentile rank: 
9
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

N- and p-channel field-effect transistors with single quantum well for complementary circuits

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NRL

A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

Inventors: 
Bennett, Brian R.; Boos, John Bradley; Ancona, Mario; Champlain, James G.; Papanicolaou, Nicolas A.
Patent Number: 
US8461664
Technical domain: 
Materials and Coatings
FIle Date: 
2011-05-25
Grant Date: 
2013-06-11
Grant time: 
748 days
Grant time percentile rank: 
13
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

High-temperature interband cascade lasers

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NRL

An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 Å, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.

Inventors: 
Vurgaftman, Igor; Meyer, Jerry R.; Canedy, Chadwick Lawrence; Bewley, William W.; Lindle, James R.; Kim, Chul-soo; Kim, Mijin
Patent Number: 
US8493654
Technical domain: 
Materials and Coatings
FIle Date: 
2012-01-19
Grant Date: 
2013-07-23
Grant time: 
551 days
Grant time percentile rank: 
10
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polymeric compositions containing microspheres

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NRL

Disclosed herein is a composition having a thermoset polymer and a plurality of hollow microsphere homogenously dispersed in the composition. The polymer is a cyanate ester thermoset, a phthalonitrile thermoset, a crosslinked acetylene thermoset, or a hydrosilation thermoset. Also disclosed herein is a method of: providing a thermosetting compound; adding microspheres to the thermosetting compound; and mixing the thermosetting compound while initiating crosslinking of the thermosetting compound.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew
Patent Number: 
US8569399
Technical domain: 
Materials and Coatings
FIle Date: 
2012-09-13
Grant Date: 
2013-10-29
Grant time: 
411 days
Grant time percentile rank: 
7
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

RuO2-coated fibrous insulator

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NRL

An article having: a nonconductive fiber and a RuO2 coating. A method of: immersing a nonconductive article in a solution of RuO4 and a nonpolar solvent at a temperature that is below the temperature at which RuO4 decomposes to RuO2 in the nonpolar solvent in the presence of the article; and warming the article and solution to ambient temperature under ambient conditions to cause the formation of a RuO2 coating on a portion of the article. An article having: a nonconductive fiber and a coating. The coating is made by electroless deposition, sputtering, atomic-layer deposition, chemical vapor deposition, or physical vapor deposition.

Inventors: 
Rolison, Debra R.; Long, Jeffrey W.; Chervin, Christopher N.; Lytle, Justin C.; Pettigrew, Katherine A.
Patent Number: 
US8889257
Technical domain: 
Materials and Coatings
FIle Date: 
2008-10-06
Grant Date: 
2014-11-18
Grant time: 
2,234 days
Grant time percentile rank: 
41
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method of forming metal oxide nano-powders

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NRL

Monodisperse metal oxide nanopowders are prepared by treating a dispersion of crude metal oxide nanopowder with ultrasonication, allowing the dispersion to settle, and subjecting the remaining suspended portion to centrifugation to obtain a supernatant comprising metal oxide nanopowder.

Inventors: 
Kim, Woohong; Villalobos, Guillermo R.; Sanghera, Jasbinder S.; Aggarwal, Ishwar D.
Patent Number: 
US8646612
Technical domain: 
Materials and Coatings
FIle Date: 
2012-03-19
Grant Date: 
2014-02-11
Grant time: 
694 days
Grant time percentile rank: 
12
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Mobile self-spreading biocides

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NRL

A compound having the formula: Each R1 is C1-C3 alkyl group or fluoridated C1-C3 alkyl group. The value n is a positive integer. Each R2 is alkylene group or polyethylene glycol group. Y1 is hydrogen, quaternary ammonium containing group, or phenol-containing group. Y2 is quaternary ammonium-containing group or phenol-containing group. The quaternary ammonium-containing group is non-aromatic and contains no more than one quaternary ammonium.

Inventors: 
Wynne, James H.; Pant, Ramesh R.
Patent Number: 
US8653293
Technical domain: 
Materials and Coatings
FIle Date: 
2013-01-07
Grant Date: 
2014-02-18
Grant time: 
407 days
Grant time percentile rank: 
7
Claim count percentile rank: 
1
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Spinel-germanate glass composite as an IR window

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NRL

This disclosure involves a new spinel and glass micro-composite material and process for making such. The composite has excellent transmission in the 0.5-5.0 μm wavelength region suitable for various visible and mid IR applications utilizing windows, domes and other geometric shapes. The composite can be made at a temperature about 40% lower than the glass melting temperature and about 50% lower than the spinel sintering temperature. The composite material has high modulus and fracture toughness which are important for impact resistance in armor and other practical applications.

Inventors: 
Bayya, Shyam S.; Sanghera, Jasbinder S.; Villalobos, Guillermo R.; Aggarwal, Ishwar D.
Patent Number: 
US8658083
Technical domain: 
Materials and Coatings
FIle Date: 
2012-06-26
Grant Date: 
2014-02-25
Grant time: 
609 days
Grant time percentile rank: 
11
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Metal nanoparticles with a pre-selected number of atoms

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NRL

A metron refers to a molecule which contains a pre-defined number of high affinity binding sites for metal ions. Metrons may be used to prepare homogenous populations of nanoparticles each composed of a same, specific number of atoms, wherein each particle has the same size ranging from 2 atoms to about ten nanometers.

Inventors: 
Kidwell, David A.; Epshteyn, Albert
Patent Number: 
US8728197
Technical domain: 
Materials and Coatings
FIle Date: 
2011-12-12
Grant Date: 
2014-05-20
Grant time: 
890 days
Grant time percentile rank: 
16
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates

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NRL

A method for reducing graphene film thickness on a donor substrate and transferring graphene films from a donor substrate to a handle substrate includes applying a bonding material to the graphene on the donor substrate, releasing the bonding material from the donor substrate thereby leaving graphene on the bonding material, applying the bonding material with graphene onto the handle substrate, and releasing the bonding material from the handle substrate thereby leaving the graphene on the handle substrate. The donor substrate may comprise SiC, metal foil or other graphene growth substrate, and the handle substrate may comprise a semiconductor or insulator crystal, semiconductor device, epitaxial layer, flexible substrate, metal film, or organic device.

Inventors: 
Caldwell, Joshua D.; Hobart, Karl D.; Anderson, Travis; Kub, Francis J.
Patent Number: 
US8753468
Technical domain: 
Materials and Coatings
FIle Date: 
2010-08-12
Grant Date: 
2014-06-17
Grant time: 
1,405 days
Grant time percentile rank: 
25
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Inverted light-emitting diode having plasmonically enhanced emission

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NRL

An LED device having plasmonically enhanced emission is provided. The device includes an inverted LED structure with a coating of metal nanoparticles on the surface chosen to match the plasmonic response to the peak emission from the active quantum well (QW) emission region of the LED. The active QW emission region is separated from the metal nanoparticles on the surface by a thin n-type contact layer disposed on a top side of the active QW emission. A p-type layer is disposed immediately beneath the active QW emission region and injects holes into the active QW emission region. The n-type contact layer is sufficiently thin to permit a coupling of the surface plasmons (SPs) from the metal nanoparticles and the excitons in the active QW emission region. The SP-exciton coupling provides an alternative decay route for the excitons and thus enhances the photon emission from the LED device.

Inventors: 
Mastro, Michael A.
Patent Number: 
US8779456
Technical domain: 
Materials and Coatings
FIle Date: 
2013-12-16
Grant Date: 
2014-07-15
Grant time: 
211 days
Grant time percentile rank: 
3
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Monoclinic india stabilized gadolinia

Patent image
NRL

A composition comprising india stabilized gadolinia wherein the india stabilized gadolinia is an oxide with a direct substitution of the indium ion for the gadolinia ion resulting in a compound with the formula InxGd2-xO3.

Inventors: 
Qadri, Syed B.; Villalobos, Guillermo R.; Sanghera, Jasbinder S.
Patent Number: 
US8883326
Technical domain: 
Materials and Coatings
FIle Date: 
2013-03-13
Grant Date: 
2014-11-11
Grant time: 
608 days
Grant time percentile rank: 
11
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Refractory metal boride ceramics and methods of making thereof

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NRL

A composition having nanoparticles of a refractory-metal boride and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising a metal component, boron, and an organic component. The metal component is nanoparticles or particles of a refractory metal or a refractory-metal compound capable of decomposing into refractory metal nanoparticles. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining particles of a refractory metal or a refractory-metal compound capable of reacting or decomposing into refractory-metal nanoparticles, boron, and an organic compound having a char yield of at least 60% by weight to form a precursor mixture. A composition having nanoparticles of a refractory-metal boride that is not in the form of a powder.

Inventors: 
Keller, Teddy M.; Saab, Andrew; Laskoski, Matthew; Qadri, Syed B.
Patent Number: 
US8865301
Technical domain: 
Materials and Coatings
FIle Date: 
2013-02-15
Grant Date: 
2014-10-21
Grant time: 
613 days
Grant time percentile rank: 
11
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Ordered supramolecular system for organic photovoltaics

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NRL

A structure having: a molecule of carboxymethyl amylose (CMA) in a super-helical conformation; cyanine molecules on the exterior surface of the CMA arranged in a J-aggregate formation; and a chromophore molecule in the interior space of the CMA.

Inventors: 
Kim, Oh-kil
Patent Number: 
US8866009
Technical domain: 
Materials and Coatings
FIle Date: 
2009-01-22
Grant Date: 
2014-10-21
Grant time: 
2,098 days
Grant time percentile rank: 
38
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Transistor with enhanced channel charge inducing material layer and threshold voltage control

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NRL

High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.

Inventors: 
Kub, Francis J.; Anderson, Travis; Hobart, Karl D.; Mastro, Michael A.; Eddy Jr., Charles R.
Patent Number: 
US8900939
Technical domain: 
Materials and Coatings
FIle Date: 
2014-01-28
Grant Date: 
2014-12-02
Grant time: 
308 days
Grant time percentile rank: 
5
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Phthalonitrile prepolymer intermediate

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NRL

A compound having: one or more of the below repeat units, one or more terminating Ar—NH— groups bound to carbon radicals, and one or more terminating —H groups bound to nitrogen radicals. Each R is an organic group and each Ar is an aromatic group. The compound is not a thermoset. A method of: mixing an aromatic amine having the formula Ar—NH2 with a phthalonitrile compound, heating the mixture to form the compound described above, and cooling the mixture before the onset of gelation.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew
Patent Number: 
US8921510
Technical domain: 
Materials and Coatings
FIle Date: 
2014-09-26
Grant Date: 
2014-12-30
Grant time: 
95 days
Grant time percentile rank: 
1
Claim count percentile rank: 
6
Citations percentile rank: 
3
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Elastomeric composites with tether-containing, conducting polymers for nanoscale diffusion control

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NRL

A redox-active conductive polymer includes a charged tether. An interpenetrating network including such a conducting polymer can be switched between two states of diffusivity (porosity) by application of a voltage. Such a material can be useful in breathable protective clothing, controlled release, intelligent sensing/filtration, novel separation processes, nanomanufacturing, and other areas.

Inventors: 
Martin, Brett D.; Moore, Martin H.; Ratna, Banahalli R.; Justin, Gusphyl; Naciri, Jawad
Patent Number: 
US8931114
Technical domain: 
Materials and Coatings
FIle Date: 
2011-11-15
Grant Date: 
2015-01-13
Grant time: 
1,155 days
Grant time percentile rank: 
21
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Melt stabilization and vapor-phase synthesis of cesium germanium halides

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NRL

The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt. This disclosure allows for a direct synthesis of these materials without the use of water or the introduction of other possible contaminants.

Inventors: 
Condon, Nicholas J.; Bowman, Steven R.; O'connor, Shawn P.
Patent Number: 
US8945418
Technical domain: 
Materials and Coatings
FIle Date: 
2012-11-13
Grant Date: 
2015-02-03
Grant time: 
812 days
Grant time percentile rank: 
14
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Methods for preparing linked peptide rings and peptide nanotubes obtained thereby

Patent image
NRL

Peptide nanotube polymers and methods of making such are disclosed. The peptide nanotube polymers are comprised of alternating monomers of the first peptide ring and monomers of the second peptide ring covalently bonded to one another via a linker, and can be functionalized. The described peptide nanotube polymers can enjoy the combined properties of healing and toughness, self-reporting, and tunability and actuation.

Inventors: 
Kulp III, John L.; Kolel-veetil, Manoj K.; Clark, Thomas D.
Patent Number: 
US8975368
Technical domain: 
Materials and Coatings
FIle Date: 
2010-08-12
Grant Date: 
2015-03-10
Grant time: 
1,671 days
Grant time percentile rank: 
30
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polymeric compositions containing microspheres

Patent image
NRL

Disclosed herein is a composition having a thermoset polymer and a plurality of hollow microsphere homogenously dispersed in the composition. The polymer is a cyanate ester thermoset, a phthalonitrile thermoset, a crosslinked acetylene thermoset, or a hydrosilation thermoset. Also disclosed herein is a method of: providing a thermosetting compound; adding microspheres to the thermosetting compound; and mixing the thermosetting compound while initiating crosslinking of the thermosetting compound.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew; Kolel-veetil, Manoj K.
Patent Number: 
US8969434
Technical domain: 
Materials and Coatings
FIle Date: 
2013-09-12
Grant Date: 
2015-03-03
Grant time: 
537 days
Grant time percentile rank: 
9
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis of and curing additives for phthalonitriles

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NRL

A composition having a mixture of the below compounds having a mole ratio of at least 1:20. Ar1 and Ar2 are independently selected aromatic groups. A composition comprising phthalonitrile compounds that comprise at least 5 mol % of the first compound below. A method of: providing a solution of a dichloroaromatic compound having an electron-withdrawing group bound to each aromatic ring containing one of the chloride groups; a dihydroxyaromatic compound or anion thereof; an organic transition metal complex or a transition metal salt; an alkaline hydroxide base; and a solvent; and heating the solution to a temperature at which the dichloroaromatic compound and the dihydroxyaromatic compound react to form a dimetallic salt of an aromatic ether oligomer. The molar ratio of the dihydroxyaromatic compound to the dichloroaromatic compound is greater than 2:1. Water formed during the heating is concurrently distilled from the solution.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew
Patent Number: 
US8981036
Technical domain: 
Materials and Coatings
FIle Date: 
2014-09-11
Grant Date: 
2015-03-17
Grant time: 
187 days
Grant time percentile rank: 
3
Claim count percentile rank: 
7
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Diamond and diamond composite material

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NRL

A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate.

Inventors: 
Kub, Francis J.; Eddy Jr., Charles R.; Feygelson, Boris N.; Johnson, Scooter
Patent Number: 
US9099375
Technical domain: 
Materials and Coatings
FIle Date: 
2013-05-21
Grant Date: 
2015-08-04
Grant time: 
805 days
Grant time percentile rank: 
14
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature

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NRL

Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.

Inventors: 
Feigelson, Boris N.; Hite, Jennifer K.; Kub, Francis J.; Eddy Jr., Charles R.
Patent Number: 
US8999060
Technical domain: 
Materials and Coatings
FIle Date: 
2013-03-12
Grant Date: 
2015-04-07
Grant time: 
756 days
Grant time percentile rank: 
13
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Low-resistivity p-type GaSb quantum wells

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NRL

A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of In0.52Al0.48As on an InP substrate, where the In0.52Al0.48As is lattice matched to InP, followed by an AlAsxSb1-x buffer layer on the In0.52Al0.48As layer, an AlAsxSb1-x spacer layer on the AlAsxSb1-x buffer layer, a GaSb quantum well layer on the AlAsxSb1-x spacer layer, an AlAsxSb1-x barrier layer on the GaSb quantum well layer, an In0.2Al0.8Sb etch-stop layer on the AlAsxSb1-x barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

Inventors: 
Bennett, Brian R.; Chick, Theresa F.; Ancona, Mario G.; Boos, John Bradley
Patent Number: 
US9006708
Technical domain: 
Materials and Coatings
FIle Date: 
2013-05-16
Grant Date: 
2015-04-14
Grant time: 
698 days
Grant time percentile rank: 
12
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Sonochemical synthesis of boron and boron-carbon nanomaterials by alkali metal reduction

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NRL

A method of preparing a nanomaterial comprising boron includes sonicating a boron trihalide and/or boron alkoxide in a hydrocarbon solvent with an alkali metal under an inert atmosphere to form a dark solid, and annealing the dark solid at a temperature sufficient to sublime alkali metal salt therein, thereby obtaining a boron nanomaterial. Reacting with a Group IVB metal produces a metal boride, and combining an alkali metal salt of a hydrocarbon with the boron trihalide prior to sonicating produces a carbonaceous boron material.

Inventors: 
Purdy, Andrew P.
Patent Number: 
US9017628
Technical domain: 
Materials and Coatings
FIle Date: 
2013-11-25
Grant Date: 
2015-04-28
Grant time: 
519 days
Grant time percentile rank: 
9
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Nanometer-scale level structures and fabrication method for digital etching of nanometer-scale level structures

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A ramped etalon cavity structure and a method of fabricating same. A bi-layer stack is deposited on a substrate. The bi-layer stack includes a plurality of bi-layers. Each bi-layer of the plurality of bi-layers includes an etch stop layer and a bulk layer. A three dimensional photoresist structure is formed by using gray-tone lithography. The three dimensional photoresist is plasma etched into the bi-layer stack, thereby generating an etched bi-layer stack. The etched bi-layer stack is chemically etched with a first chemical etchant to generate a multiple-step structure on the substrate, wherein the first chemical etchant stops at the etch stop layer.

Inventors: 
Boudreau, Andrew J.; Yetzbacher, Michael K.; Christophersen, Marc; Phlips, Bernard F.
Patent Number: 
US9035408
Technical domain: 
Materials and Coatings
FIle Date: 
2014-05-05
Grant Date: 
2015-05-19
Grant time: 
379 days
Grant time percentile rank: 
6
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Melt stabilization and vapor-phase synthesis of cesium germanium halides

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The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt. This disclosure allows for a direct synthesis of these materials without the use of water or the introduction of other possible contaminants.

Inventors: 
Bowman, Steven R.; Condon, Nicholas J.; O'connor, Shawn P.
Patent Number: 
US9051516
Technical domain: 
Materials and Coatings
FIle Date: 
2014-12-19
Grant Date: 
2015-06-09
Grant time: 
172 days
Grant time percentile rank: 
3
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Strained InGaAs quantum wells for complementary transistors

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An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

Inventors: 
Bennett, Brian R.; Boos, John Bradley; Chick, Theresa F.; Champlain, James G.
Patent Number: 
US9054169
Technical domain: 
Materials and Coatings
FIle Date: 
2014-10-02
Grant Date: 
2015-06-09
Grant time: 
250 days
Grant time percentile rank: 
4
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method for the formation of PbSe nanowires in non-coordinating solvent

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This disclosure concerns a method of making nanowires in a single flask and in non-coordinating solvent involving the reaction of PbO with oleic acid to produce Pb oleate, heating the Pb oleate to a preferred temperature with additional coordinating ligands, injecting a solution of Se to produce a second solution, heating the second solution, and maintaining the temperature, resulting in nucleation and growth of PbSe nanowires.

Inventors: 
Foos, Edward E.
Patent Number: 
US9067787
Technical domain: 
Materials and Coatings
FIle Date: 
2011-04-15
Grant Date: 
2015-06-30
Grant time: 
1,537 days
Grant time percentile rank: 
28
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Spinel-germanate glass composite as an IR window

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This disclosure involves a new spinel and glass micro-composite material and process for making such. The composite has excellent transmission in the 0.5-5.0 μm wavelength region suitable for various visible and mid IR applications utilizing windows, domes and other geometric shapes. The composite can be made at a temperature about 40% lower than the glass melting temperature and about 50% lower than the spinel sintering temperature. The composite material has high modulus and fracture toughness which are important for impact resistance in armor and other practical applications.

Inventors: 
Bayya, Shyam S.; Sanghera, Jasbinder S.; Villalobos, Guillermo R.; Aggarwal, Ishwar D.
Patent Number: 
US9067819
Technical domain: 
Materials and Coatings
FIle Date: 
2013-12-11
Grant Date: 
2015-06-30
Grant time: 
566 days
Grant time percentile rank: 
10
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

CVD nanocrystalline silicon as thermoelectric material

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A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

Inventors: 
Liu, Xiao; Metcalf, Thomas H.; Queen, Daniel R.; Jugdersuren, Battogtokh; Wang, Qi; Nemeth, William
Patent Number: 
US9472745
Technical domain: 
Materials and Coatings
FIle Date: 
2016-02-19
Grant Date: 
2016-10-18
Grant time: 
242 days
Grant time percentile rank: 
4
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Concentric forster resonance energy transfer relay for the parallel detection of two bio/physicochemical process

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Described herein is a Förster (or fluorescence) resonance energy transfer (FRET) configuration with three energy transfer pathways between three luminescent components, where two of the energy transfer steps occur in sequence as a relay, and the first step of the relay is in competition with a third energy transfer process (energy transfer from the donor to the intermediary is in competition with energy transfer from the donor directly to the terminal acceptor).

Inventors: 
Medintz, Igor L.; Algar, Russ W.
Patent Number: 
US9120967
Technical domain: 
Materials and Coatings
FIle Date: 
2014-03-07
Grant Date: 
2015-09-01
Grant time: 
543 days
Grant time percentile rank: 
9
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Transistor with diamond gate

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A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN high-electron-mobility transistor (HEMT). The diamond gate electrode is formed so that it directly contacts the barrier layer. In some embodiments, the diamond gate electrode is formed from boron-doped nanocrystalline diamond (NCD), while in other embodiments, the diamond gate electrode is formed from single crystal diamond.

Inventors: 
Koehler, Andrew D.; Anderson, Travis J.; Tadjer, Marko J.; Feygelson, Tatyana I.; Hobart, Karl D.
Patent Number: 
US9331163
Technical domain: 
Materials and Coatings
FIle Date: 
2014-08-28
Grant Date: 
2016-05-03
Grant time: 
614 days
Grant time percentile rank: 
11
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Synthesis and polymerization of oligomeric aliphatic-aromatic based phthalonitriles

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A phthalonitrile compound having the formula below. The value n is a positive integer. Each R has a hydrocarbon chain optionally having —O— or —SiR′2—O—. Each R′ is an aliphatic group. Each Ar is an aromatic group with the proviso that Ar contains at least two aromatic rings when n is 1 and R is an alkylene group. A method of: reacting an excess of a dihydroxyaromatic compound with a dihalocompound to form an oligomer; and reacting the oligomer with 4-nitrophthalonitrile to form the phthalonitrile compound, where Ar is an aromatic group.

Inventors: 
Laskoski, Matthew; Keller, Teddy M.; Saab, Andrew P.
Patent Number: 
US9394404
Technical domain: 
Materials and Coatings
FIle Date: 
2015-12-14
Grant Date: 
2016-07-19
Grant time: 
218 days
Grant time percentile rank: 
3
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Carboxybetaine-functionalized diols and zwitterionic polyurethane hydrogels derived therefrom

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A compound having the formula: X−N+(CH3)(CH2CH2OH)2[(CH2)n—COO—R1] and a polymer having the repeat unit: X−{—OCH2CH2—N+(CH3)[(CH2)n—CO—Y]—CH2CH2O—CO—NH—R2—NH—CO—}. R1 is an ester protecting group, R2 is an organic group, X is a halide, and n is a positive integer. Each Y is O−Z+ or O—R1, where Z+ is a cation from an aqueous base. A method of reacting N-methyldiethanolamine with an ω-halo-n-alkanoate ester to form the above compound.

Inventors: 
Coneski, Peter N.; Wynne, James H.
Patent Number: 
US9139684
Technical domain: 
Materials and Coatings
FIle Date: 
2013-03-04
Grant Date: 
2015-09-22
Grant time: 
932 days
Grant time percentile rank: 
17
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Single-component moisture-curable coatings based on N-substituted urea polymers with extended chains and terminal alkoxysilanes

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Moisture-curable single-component (1K) coatings based on N-substituted urea polymers with extended chains and terminal alkoxysilane groups. The coatings are highly flexible, are gloss retentive, provide fast tack-free and dry-through times, provide high solvent resistance, and provide excellent exterior color stability to sunlight. The coatings can be formulated to produce high-gloss, semi-gloss and low-gloss finishes, and thus have application as both commercial and military coatings.

Inventors: 
Iezzi, Erick B.
Patent Number: 
US9139753
Technical domain: 
Materials and Coatings
FIle Date: 
2014-02-24
Grant Date: 
2015-09-22
Grant time: 
575 days
Grant time percentile rank: 
10
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates

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An array of through-silicon vias (TSVs) are formed in a silicone substrate. The vias can be tapered such that the diameter of the via at the surface of the substrate is larger than the diameter of the via at its bottom, with the diameter varying continuously along its depth. After the via is formed, it is seeded with a thin layer of nanocrystalline diamond (NCD) particles, and a NCD film is grown on the bottom and along the sidewalls of the via. The presence of the diamond-filled vias provides improved thermal management to semiconductor devices formed on the silicon substrate.

Inventors: 
Hobart, Karl D.; Tadjer, Marko J.; Feygelson, Tatyana I.; Pate, Bradford B.; Anderson, Travis J.
Patent Number: 
US9159641
Technical domain: 
Materials and Coatings
FIle Date: 
2014-03-14
Grant Date: 
2015-10-13
Grant time: 
578 days
Grant time percentile rank: 
10
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Self-decontaminating surface coatings and articles prepared therefrom

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The present invention is directed toward a self-decontaminating surface coating, which when cured has a partially hydrophobic surface. The coating comprises a polymeric coating resin which, when cured, is hydrophilic. The coating also comprises a biocide, a germinating agent, and a hydrophobic micro/nano particulate material. The coating is suitable for application to ceramics, metals, and polymer substrates. Articles coated with the coating of the present invention are resistant to spores.

Inventors: 
Rogers, Martin E.; Phillips, Janice P.; Koene, Bryan; Hirsch, Marc S.; Wynne, James H.
Patent Number: 
US9241482
Technical domain: 
Materials and Coatings
FIle Date: 
2006-10-11
Grant Date: 
2016-01-26
Grant time: 
3,394 days
Grant time percentile rank: 
62
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method of forming graphene on a surface

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Methods of forming a graphene material on a surface are presented. A metal material is disposed on a material substrate or material layer and is infused with carbon, for example, by exposing the metal to a carbon-containing vapor. The carbon-containing metal material is annealed to cause graphene to precipitate onto the bottom of the metal material to form a graphene layer between the metal material and the material substrate/material layer and also onto the top and/or sides of the metal material. Graphene material is removed from the top and sides of the metal material and then the metal material is removed, leaving only the graphene layer that was formed on the bottom of the metal material. In some cases graphene material that formed on one or more side of the sides of the metal material is not removed so that a vertical graphene material layer is formed.

Inventors: 
Kub, Francis J.; Anderson, Travis; Feygelson, Boris N.
Patent Number: 
US9327982
Technical domain: 
Materials and Coatings
FIle Date: 
2013-03-05
Grant Date: 
2016-05-03
Grant time: 
1,155 days
Grant time percentile rank: 
21
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Aspartic resins

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A composition having a polyurea made by reacting a polyisocyanate with one of the below compounds. The value x is 2 or 3. A method of: providing a polyisocyanate and one of the below compounds, spraying the polyisocyanate and the compound with a plural component pump onto a surface to form a mixture, and allowing the mixture to cure to a polyurea.

Inventors: 
Webb, Arthur A.; Verborgt, Jozef; Lucas, Keith E.
Patent Number: 
US9284400
Technical domain: 
Materials and Coatings
FIle Date: 
2013-03-15
Grant Date: 
2016-03-15
Grant time: 
1,096 days
Grant time percentile rank: 
20
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Large scale preparation method for functionalizing the surface of magnetic microparticles with an inorganic phosphorous dendrimer

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A method of attaching a phosphorous dendrimer onto magnetic microparticles by taking magnetic microparticles in a water-based solution, then performing a solvent exchange, then suspending the microparticles in a phosphorous dendrimer solution and shaking, then washing the microparticles with an organic solvent, and then washing the microparticles with a transition solvent. The solvent exchange is done by washing the microparticles with a first concentration of a transition solvent, then washing the microparticles with a second concentration of the transition solvent where the second concentration is greater than the first concentration, then washing the microparticles with an organic solvent, then washing the microparticles with the transition solvent, then washing the microparticles with the organic solvent, and then suspending the microparticles in the transition solvent. Also disclosed is the related phosphorous dendrimer made by this method.

Inventors: 
Archer, Marie J.; Lin, Baochuan
Patent Number: 
US9296771
Technical domain: 
Materials and Coatings
FIle Date: 
2014-03-13
Grant Date: 
2016-03-29
Grant time: 
747 days
Grant time percentile rank: 
13
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Extraction of carbon dioxide and hydrogen from seawater and hydrocarbon production therefrom

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Apparatus for seawater acidification including an ion exchange, cathode and anode electrode compartments and cation-permeable membranes that separate the electrode compartments from the ion exchange compartment. Means is provided for feeding seawater through the ion exchange compartment and for feeding a dissociable liquid media through the anode and cathode electrode compartments. A cathode is located in the cathode electrode compartment and an anode is located in the anode electrode compartment and a means for application of current to the cathode and anode is provided. A method for the acidification of seawater by subjecting the seawater to an ion exchange reaction to exchange H+ ions for Na+ ions. Carbon dioxide may be extracted from the acidified seawater. Optionally, the ion exchange reaction can be conducted under conditions which produce hydrogen as well as carbon dioxide. The carbon dioxide and hydrogen may be used to produce hydrocarbons.

Inventors: 
Dimascio, Felice; Hardy, Dennis R.; Lewis, Kathleen M.; Willauer, Heather D.; Williams, Frederick
Patent Number: 
US9303323
Technical domain: 
Materials and Coatings
FIle Date: 
2013-03-15
Grant Date: 
2016-04-05
Grant time: 
1,117 days
Grant time percentile rank: 
20
Claim count percentile rank: 
9
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Self-assembly of metallic nanoparticles into macroscopic, high-density, monolayer films

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A method of forming a monolayer film of nanoparticles includes forming a fluid mixture by combining nanoparticles dispersed in water with a water-miscible organic solvent and a molecular ligand comprising a head group with affinity for the nanoparticle, and introducing the fluid mixture to a substrate in the presence of an air/fluid interface, thereby causing a monolayer film of nanoparticles to form on the substrate. Such monolayers films can include metallic nanoparticles such as gold, and possess substantially uniform spacing over at least a one centimeter length scale.

Inventors: 
Fontana, Jake; Naciri, Jawad; Ratna, Banahalli R.
Patent Number: 
US9321920
Technical domain: 
Materials and Coatings
FIle Date: 
2013-02-20
Grant Date: 
2016-04-26
Grant time: 
1,161 days
Grant time percentile rank: 
21
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates

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NRL

An array of through-silicon vias (TSVs) are formed in a silicone substrate. The vias can be tapered such that the diameter of the via at the surface of the substrate is larger than the diameter of the via at its bottom, with the diameter varying continuously along its depth. After the via is formed, it is seeded with a thin layer of nanocrystalline diamond (NCD) particles, and a NCD film is grown on the bottom and along the sidewalls of the via. The presence of the diamond-filled vias provides improved thermal management to semiconductor devices formed on the silicon substrate.

Inventors: 
Hobart, Karl D.; Tadjer, Marko J.; Feygelson, Tatyana I.; Pate, Bradford B.; Anderson, Travis J.
Patent Number: 
US9305858
Technical domain: 
Materials and Coatings
FIle Date: 
2015-08-07
Grant Date: 
2016-04-05
Grant time: 
242 days
Grant time percentile rank: 
4
Claim count percentile rank: 
6
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Solvent-free, self-polishing polyurethane matrix for use in solvent-free antifoulings

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A polyol having the formula Si(O—R1—OH)m(O—R2)nR3. Each R1 is a divalent radical derived from diethylene glycol, triethylene glycol, dipropylene glycol, or tripropylene glycol, each R2 is an aliphatic group, and R3 is an alkyl group or aromatic group. The value m is 2 or 3 and n is 0 or 1. A process of making the above polyol by: providing a reactant having the formula Si(O—R2)3R3, and reacting the reactant with a diol having the formula HO—R1—OH. An antifouling coating comprising a thermoset formed by reacting a polyisocyanate with the above polyol. The coating is not a foam.

Inventors: 
Verborgt, Jozef; Webb, Arthur A.
Patent Number: 
US9404018
Technical domain: 
Materials and Coatings
FIle Date: 
2015-10-20
Grant Date: 
2016-08-02
Grant time: 
287 days
Grant time percentile rank: 
5
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Method for vertical and lateral control of III-N polarity

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Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.

Inventors: 
Hite, Jennifer K.; Kub, Francis J.; Eddy Jr., Charles R.; Garces, Nelson
Patent Number: 
US9396941
Technical domain: 
Materials and Coatings
FIle Date: 
2011-09-19
Grant Date: 
2016-07-19
Grant time: 
1,765 days
Grant time percentile rank: 
32
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Perforated contact electrode on vertical nanowire array

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Disclosed herein is a structure having: a support, a plurality of nanowires perpendicular to the support, and an electrode in contact with a first end of each nanowire. Each nanowire has a second end in contact with the support. The electrode contains a plurality of perforations. The electrode contains a plurality of perforations. Also disclosed herein is a method of: providing the above support and nanowires; depositing a layer of a filler material that covers a portion of each nanowire and leaves a first end of each nanowire exposed; depositing a plurality of nanoparticles onto the filler material; depositing an electrode material on the nanoparticles, the ends of the nanowires, and any exposed filler material; and removing the nanoparticles and filler material to form an electrode in contact with the first end of each nanowire; wherein the electrode contains a plurality of perforations.

Inventors: 
Pehrsson, Pehr E.; Field, Chistopher; In, Hyun Jin
Patent Number: 
US9422158
Technical domain: 
Materials and Coatings
FIle Date: 
2011-11-10
Grant Date: 
2016-08-23
Grant time: 
1,748 days
Grant time percentile rank: 
32
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Growth of high-performance III-nitride transistor passivation layer for GaN electronics

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Methods for forming a high-quality III-nitride passivation layer on an AlGaN/GaN HEMT. A III-nitride passivation layer is formed on the surface of an AlGaN/GaN HEMT by means of atomic layer epitaxy (ALE), either before or after deposition of a gate metal electrode on the AlGaN barrier layer. Depending on the gate metal and/or the passivation material used, the III-nitride passivation layer can be formed by ALE at temperatures between about 300° C. and about 85020 C. In a specific embodiment, the III-nitride passivation layer can be an AlN layer formed by ALE at about 550° C. after deposition of a Schottky metal gate electrode. The III-nitride passivation layer can be grown so as to conformally cover the entire device, providing a hermetic seal that protects the against environmental conditions.

Inventors: 
Koehler, Andrew D.; Anderson, Travis J.; Hobart, Karl D.; Kub, Francis J.
Patent Number: 
US9490356
Technical domain: 
Materials and Coatings
FIle Date: 
2016-03-25
Grant Date: 
2016-11-08
Grant time: 
228 days
Grant time percentile rank: 
4
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Reduction of basal plane dislocations in epitaxial SiC

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A method for reducing/eliminating basal plane dislocations from SiC epilayers is disclosed. An article having: an off-axis SiC substrate having an off-axis angle of no more than 6°; and a SiC epitaxial layer grown on the substrate. The epitaxial layer has no more than 2 basal plane dislocations per cm2 at the surface of the epitaxial layer. A method of growing an epitaxial SiC layer on an off-axis SiC substrate by: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxially grow SiC on the substrate in the growth chamber. The substrate has an off-axis angle of no more than 6°. The growth conditions include: a growth temperature of 1530-1650° C.; a pressure of 50-125 mbar; a C/H gas flow ratio of 9.38×10−5-1.5×10−3; a C/Si ratio of 0.5-3; a carbon source gas flow rate during ramp to growth temperature from 0 to 15 sccm; and an electron or hole concentration of 1013-1019/cm3.

Inventors: 
Myers-ward, Rachael L.; Gaskill, David Kurt; Vanmil, Brenda L.; Stahlbush, Robert E.; Eddy Jr., Charles R.
Patent Number: 
US9464366
Technical domain: 
Materials and Coatings
FIle Date: 
2010-08-20
Grant Date: 
2016-10-11
Grant time: 
2,244 days
Grant time percentile rank: 
41
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Controlling crosslinking density and processing parameters of phthalonitriles

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Disclosed is a composition having: a diphthalonitrile compound having at least two phthalonitrile groups; a reactive plasticizer; and an amine curing agent. Also disclosed is a composition having: a diphthalonitrile compound having at least two phthalonitrile groups; a nonreactive plasticizer; and an amine curing agent. Also disclosed is a method of: providing a composition having a phthalonitrile compound; heating the composition to a processing temperature until the composition has a viscosity of 30-40 Pa·s at the processing temperature to form a partially cured composition; placing the partially cured composition into a material chamber of an extrusion machine; heating the partially cured composition and the material chamber to within 10° C. of the processing temperature; and extruding fiber from the extrusion machine.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew; Saab, Andrew P.
Patent Number: 
US9464170
Technical domain: 
Materials and Coatings
FIle Date: 
2015-10-29
Grant Date: 
2016-10-11
Grant time: 
348 days
Grant time percentile rank: 
6
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Transistor with diamond gate

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A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN high-electron-mobility transistor (HEMT). The diamond gate electrode is formed so that it directly contacts the barrier layer. In some embodiments, the diamond gate electrode is formed from boron-doped nanocrystalline diamond (NCD), while in other embodiments, the diamond gate electrode is formed from single crystal diamond.

Inventors: 
Koehler, Andrew D.; Anderson, Travis J.; Tadjer, Marko J.; Hobart, Karl D.; Feygelson, Tatyana I.
Patent Number: 
US9466684
Technical domain: 
Materials and Coatings
FIle Date: 
2016-03-25
Grant Date: 
2016-10-11
Grant time: 
200 days
Grant time percentile rank: 
3
Claim count percentile rank: 
2
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Solvent-free, self-polishing polyurethane matrix for use in solvent-free antifoulings

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NRL

A polyol having the formula X(O—R1—OH)m(O—R2)nHq. X is Si, C, B, Ti, P, Al, Mg, or Ca. Each R1 is derived from dipropylene glycol or tripropylene glycol, and each R2 is an aliphatic group. m is 2, 3, or 4; n is 0, 1, or 2; and q is 1 or 2 when X is C, and is 0 when X is not C. A thermoset formed by reacting a polyisocyanate with the polyol. An antifouling coating containing the thermoset and optionally a biocide. An antifouling coating that is not foam formed by reacting Si(O—R1—OH)m(O—R2)nR3 with a polyisocyanate. Each R3 is an alkyl group or aromatic group.

Inventors: 
Verborgt, Jozef; Webb, Arthur A.
Patent Number: 
US9193875
Technical domain: 
Materials and Coatings
FIle Date: 
2005-07-14
Grant Date: 
2015-11-24
Grant time: 
3,785 days
Grant time percentile rank: 
68
Claim count percentile rank: 
4
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Formation of silicon carbide-silicon nitride nanoparticle carbon compositions

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NRL

A composition having nanoparticles of silicon carbide and a carbonaceous matrix or silicon matrix. The composition is not in the form of a powder. A composition having silicon and an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining silicon and the organic compound and heating to form silicon carbide or silicon nitride nanoparticles.

Inventors: 
Keller, Teddy M.; Saab, Andrew; Laskoski, Matthew
Patent Number: 
US9045374
Technical domain: 
Materials and Coatings
FIle Date: 
2014-05-19
Grant Date: 
2015-06-02
Grant time: 
379 days
Grant time percentile rank: 
6
Claim count percentile rank: 
5
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

Polymeric compositions containing microspheres

Patent image
NRL

Disclosed herein is a composition having a thermoset polymer and a plurality of hollow microsphere homogenously dispersed in the composition. The polymer is a cyanate ester thermoset, a phthalonitrile thermoset, a crosslinked acetylene thermoset, or a hydrosilation thermoset. Also disclosed herein is a method of: providing a thermosetting compound; adding microspheres to the thermosetting compound; and mixing the thermosetting compound while initiating crosslinking of the thermosetting compound.

Inventors: 
Keller, Teddy M.; Laskoski, Matthew
Patent Number: 
US8946321
Technical domain: 
Materials and Coatings
FIle Date: 
2013-09-12
Grant Date: 
2015-02-03
Grant time: 
509 days
Grant time percentile rank: 
9
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY

High strength Zr (Hf or Ti)-Ta-B ceramics

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NSWCCD

The crystal structure of three compositions of matter has been determined to be iso-structural with FeB ortho-rhombic (space group Pnma). The crystalline structures are: Ti0.5Ta0.5B, Zr0.5Ta0.5B and Hf0.5Ta0.5B. A