Disclosed herein is a method for making transparent ceramic spinel windows, domes and other complex shapes via edge bonding.

A method of thioacetate deprotection by providing a compound of the formula R1—S—CO—R2, and reacting the compound with a quaternary ammonium cyanide salt in the presence of a protic solvent in an inert atmosphere to convert the compound to a product of the formula R1—SH. R1 is an organic group in which the bonding to sulfur is through a saturated carbon, and R2 is an aliphatic group.

Methods for producing a junction termination extension surrounding the edge of a cathode or anode junction in a semiconductor substrate, where the junction termination extension has a controlled arbitrary lateral doping profile and a controlled arbitrary lateral width, are provided. A photosensitive material is illuminated through a photomask having a pattern of opaque and clear spaces therein, the photomask being separated from the photosensitive material so that the light diffuses before striking the photosensitive material. After processing, the photosensitive material so exposed produces a laterally tapered implant mask. Dopants are introduced into the semiconductor material and follow a shape of the laterally tapered implant mask to create a controlled arbitrary lateral doping profile and a controlled lateral width in the junction termination extension in the semiconductor.

A compound having the formula CF3—CH(OH)—CH2—(L)n—CH2—SH or a disulfide thereof. Each L is substituted or unsubstituted methylene, substituted or unsubstituted oxyalkylene, and alkyl-substituted or unsubstituted siloxanylene. The compound is free of carboxysilane linkages. The value of n is a positive integer. A metal surface having the group CF3—CH(OH)—CH2—(L)n—CH2—S— bound thereto. A method of making CF3—CH(OH)—CH2—(L)n—CH2—SH by: reacting OHC—CH2—(L)n—CH2—X with (trifluoromethyl)trialkylsilane to form CF3—CH(OH)—CH2—(L)n—CH2—X; reacting the intermediate with a thiocarbonyl compound to form an adduct; and hydrolyzing the adduct followed by protonation. X is a halogen.

An oligomer having the formula: Ar1 and Ar2 are each an aromatic group or a bisphenol residue. At least one of Ar1 and Ar2 is the aromatic group. The value of m is zero or one, and n is a positive integer. A polymer made by reacting the above oligomer with a crosslinker having at least two silyl hydrogen atoms. A method of: reacting a compound having the formula: with vinyl(dimethylchloro)silane to form the above oligomer. T is —OH, —Br, or —I.

A compound having the formula: Each R1 is C1-C3 alkyl group or fluoridated C1-C3 alkyl group. The value n is a positive integer. Each R2 is alkylene group or polyethylene glycol group. Y1 is hydrogen, quaternary ammonium-containing group, or phenol-containing group. Y2 is quaternary ammonium-containing group or phenol-containing group. The quaternary ammonium-containing group is non-aromatic and contains no more than one quaternary ammonium.

The compound is a silane surface treatment agent and is useful for modifying the surfaces of silicon oxide and other metal oxides with hexafluorodimethyl carbinol functional groups. Additionally provided is a surface treatment procedure that effectively bonds it and other alkoxysilanes via homogeneous and heterogeneous amine catalysis onto metal oxide surfaces.

Disclosed is a new ionic liquid monomer salt and methods of is synthesis and polymerization. The ionic liquid monomer salt is prepared by mixing equimolar amounts of an amine, such as tris[2-(2-methoxyethoxy)-ethyl]amine and an acid functionalized polymerizable monomer, such as 2-acrylamido-2-methyl-1-propanesulfonic acid (AMPS), which is stirred at ambient temperature until salt formation is complete. Also disclosed is a new ionic liquid polymer salts and method for making the same. The synthesis of AMPS-ammonium salt polymer is accomplished by adding 2,2′-azobisisobutyronitrile (AIBN) to the ionic liquid monomer salt and heating the homogeneous melt at 70° C. for 18 hr.

A method of reacting a toluenesulfonyl-terminated polyoxyethylene compound having the formula CH3—C6H4—SO2—(O—CH2—CH2)n—O—R1 with an ammonium salt having the formula NR24X to form a compound having the formula X—CH2—CH2—(O—CH2—CH2)n-1—R3. The value n is a positive integer. X is a halogen, cyanide, cyanate, thiocyanate, or azide. R1 is a terminating group. Each R2 is hydrogen or an alkyl group. —R3 is —O—R1 or —X.

Disclosed herein are the compounds shown below. Each R is an organic group, Cb is a carborane group, and —C6H4— is phenylene. The value of each m is a nonnegative integer, q is 0 or 1, with the proviso that if q is 0 then m is 0 or 1, p is a positive integer, r is a positive integer, and n is an integer greater than or equal to 10. Also disclosed are methods of making and crosslinking the compounds. —{SiR2—([O]q—SiR2)m-[Cb-SiR2—([O]q—SiR2)m]p—C≡C—C6H4—C≡C}— —{SiR2—(O—SiR2)m—C≡C—C6H4—C≡C}n—; —{SiR2—([O]q—SiR2)m—[C≡C—C6H4—C≡C—SiR2—([O]q—SiR2)m]p-Cb-[SiR2—([O]q—SiR2)m-Cb]r}-

Disclosed herein are the compounds shown below. Each R is an organic group, Cb is a carborane group, and —C6H4— is phenylene. The value of each m is a nonnegative integer, q is 0 or 1, with the proviso that if q is 0 then m is 0 or 1, p is a positive integer, r is a positive integer, and n is an integer greater than or equal to 10. Also disclosed are methods of making and crosslinking the compounds —{SiR2—([O]q—SiR2)m-[Cb-SiR2—([O]q—SiR2)m]p—C≡C—C6H4—C≡C}— —{SiR2—(O—SiR2)m—C≡C—C6H4—C≡C}n—; —{SiR2—([O]q—SiR2)m—[C≡C—C6H4—SiR2—([O]q—SiR2)m]p-Cb-[SiR2—([O]q—SiR2)m-Cb]r}-.

A polymer made by reacting a polyisocyanate with a compound having the formula below. R1 is an organic group. R2 is an aliphatic group or oxyaliphatic group. R3 is an aliphatic group. The reaction forms urea groups from the isocyanate groups of the polyisocyanate and the NH groups of the compound.

A hexafluorodimethylcarbinol terminated compound, method of making it, and a composition of matter are disclosed. The compound may have the formula (CF3)2C(OH)-L-M-R. The substructure L may be selected from an optionally substituted propenylene group (—CH2CH═CH—) and trimethylene group (—CH2CH2CH2—). The substructure M may be selected from a substituted or unsubstituted methylene chain, a substituted or unsubstituted oxyalkylene chain, and a silicon-containing chain or combination thereof. In one embodiment, M may be selected from —(CH2)n—, —(OCH2CH2)m—, and —(Si(CH3)2O)p—Si(CH3)2—(CH2)q—, wherein n is at least 1, e.g., n is up to 10, m can be at least 1, e.g., m is up to 10, p can be 0 and in one embodiment is from 1 to 10, and wherein q can be 1 and in one embodiment is from 1 to 12. The substructure R represents one of a halogen, —SH, —SZ, —S—S-M-L-C(CF3)2(OH), wherein Z represents a thiol protecting group.

A compound having the moiety M-[(C≡C)n-M′]m. Each M and each M′ is a transition metal. Each n is 1 or 2, and m is 2 or more. A method of reacting a transition metal halide with 1,2-dilithioacetylene or 1,4-dilithiodiacetylene to form a transition metal compound.

A new graphitic material has the empirical formula C3N3P and comprises triazine rings bound together by phosphorus atoms, and/or other 5- or 6-membered rings with various carbon, nitrogen, and phosphorous connectivity. The material is made by polymerizing P(CN)3, for example by using a temperature of at least 220° C. and an elevated pressure, optionally as high as 1500° C. and 12 GPa.

A method of producing electrons via photoemission comprising providing diamond doped p-type with boron, treating a surface of the diamond by exposing it to atomic hydrogen inside an ultrahigh vacuum chamber, illuminating the surface with photons, and extracting the photoemitted electrons. A chemically stable visible light photoemission electron source comprising a diamond film having a surface terminated with hydrogen and a light source.

A hexafluorodimethylcarbinol terminated compound, method of making it, and a composition of matter are disclosed. The compound may have the formula (CF3)2C(OH)-L-M-R. The substructure L may be selected from an optionally substituted propenylene group (—CH2CH═CH—) and trimethylene group (—CH2CH2CH2—). The substructure M may be selected from a substituted or unsubstituted methylene chain, a substituted or unsubstituted oxyalkylene chain, and a silicon-containing chain or combination thereof. In one embodiment, M may be selected from —(CH2)n—, —(OCH2CH2)m—, and —(Si(CH3)2O)p—Si(CH3)2— (CH2)q—, wherein n is at least 1, e.g., n is up to 10, m can be at least 1, e.g., m is up to 10, p can be 0 and in one embodiment is from 1 to 10, and wherein q can be 1 and in one embodiment is from 1 to 12. The substructure R represents one of a halogen, —SH, —SZ, —S—S-M-L-C(CF3)2(OH), wherein Z represents a thiol protecting group.

A polymer made by reacting a polyisocyanate with a compound having the formula below. R1 is an organic group. R2 is an aliphatic group. R3 is an aliphatic group. The polyisocyanate reactants are at least 50 mol % aromatic polyisocyanates. The reaction forms urea groups from the isocyanate groups of the polyisocyanate and the NH groups of the compound.

This disclosure concerns two novel electrically conducting organic oligomers: oligo(3-amino-1H-pyrazole-4-carbonitrile) or “oligo(AP-CN)” and oligo(4-nitro-1H-pyrazole-3-yl-amine) or “oligo(AP-NO2)”, and methods of making thereof.

A coating having an adhesive hydrophilic polymer and an amphiphilic additive. The amphiphilic additive has a hydrophilic chain, a biocidal functional group bonded to the hydrophilic chain, and a hydrophobic moiety bonded to the hydrophilic chain or to the biocidal functional group. A method of forming a biocidal surface by providing an article, and coating the article with the above coating. A compound having the formula: Y—(O—CH2—CH2)n—R—(CH2)m—CH3. Y is CH3 or H. R is X is a halogen, and m and n are independently selected positive integers.

A coating having an adhesive hydrophilic polymer and an amphiphilic additive. The amphiphilic additive has a hydrophilic chain, a biocidal functional group bonded to the hydrophilic chain, and a hydrophobic moiety bonded to the hydrophilic chain or to the biocidal functional group. A method of forming a biocidal surface by providing an article, and coating the article with the above coating. A compound having the formula: Y—(O—CH2—CH2)n—R—(CH2)m—CH3. Y is CH3 or H. R is X is a halogen, and m and n are independently selected positive integers.

A method of making metal nanoparticles and carbon nanotubes is disclosed. A mixture of a transition metal compound and an aromatic polymer, a precursor of an aromatic polymer, or an aromatic monomer is heated to form a metal nanoparticle composition, optionally containing carbon nanotubes.

A non-skid coating described herein attempts to overcome the deficiencies of the conventional coatings with improved external durability and color retention, a reduced level of VOCs, and direct-to-metal (DTM) adhesion using organo-siloxane chemistry. The non-skid coating has a first component having an amino-functional siloxane resin; a second component having a non-aromatic epoxy resin; a spherical filler for lowering viscosity; a pigment; a coarse aggregate; and a thixotropic agent. The amino-functional siloxane resin can be an amino-functional methyl phenyl polysiloxane, diphenyl polysiloxane or silsesquioxane-based resin. The non-aromatic epoxy resin can be cycloaliphatic or aliphatic. The first component is about 5% to 20% weight of the coating, and the second component is about 80% to 95% weight of the coating.

A method of making metal nanoparticles and carbon nanotubes is disclosed. A mixture of a transition metal compound and an aromatic polymer, a precursor of an aromatic polymer, or an aromatic monomer is heated to form a metal nanoparticle composition, optionally containing carbon nanotubes.

A process of making metal nanoparticles comprising the steps of: providing a precursor composition comprising at least one metallic compound and at least one organic compound; wherein the organic compound is selected from the group consisting of an ethynyl compound, a metal-ethynyl complex, and combinations thereof; wherein the precursor composition is a liquid or solid at room temperature; and heating the precursor composition under conditions effective to produce metal nanoparticles. A metal nanoparticle composition comprising metal nanoparticles dispersed homogenously in a matrix selected from the group consisting of ethynyl polymer, crosslinked ethynyl polymer, amorphous carbon, carbon nanotubes, carbon nanoparticles, graphite, and combinations thereof.

This invention pertains to a composite of Spinel and BGG glass substrates and to process for bonding Spinel to BGG glass. The composite includes a Spinel and a BGG glass bonded together and having transmission in the visible and mid-infrared wavelength region. The process includes the step of heating them together above the softening temperature of the BGG glass, the composite having excellent, i.e., typically in excess of about 80%, transmission in the 0.5-5 wavelength region.

A ceramic having at least about 90% by weight magnesium aluminate and having a bulk scattering and absorption loss of less than about 1/cm at any wavelength in a range of about 0.23 to about 5.3 microns or 0.2/cm at any wavelength in a range of about 0.27 to about 4.5 microns. A method of making a ceramic by providing a plurality of particles having a magnesium aluminate core and a fluoride salt coating; heating the particles in an oxidizing atmosphere to a temperature in the range of about 400° C. to about 750° C.; and sintering the particles to form a solid ceramic.

A transparent polycrystalline ceramic having scattering and absorption loss less than 0.2/cm over a region comprising more than 95% of the originally densified shape and further provides a process for fabricating the same by hot pressing. The ceramic can be any suitable ceramic such as yttria (Y2O3) or scandia (Sc2O3) and can have a doping level of from 0 to 20% and a grain size of greater than 30 μm, although the grains can also be smaller than 30 μm. In a process for making a transparent polycrystalline ceramic in accordance with the present invention, ceramic nanoparticles can be coated with a sintering aid to minimize direct contact of adjacent ceramic powder particles and then baked at high temperatures to remove impurities from the coated particles. The thus-coated particles can then be densified by hot pressing into the final ceramic product. The invention further provides a transparent polycrystalline ceramic solid-state laser material and a laser using the hot pressed polycrystalline ceramic.

Disclosed is a method of: providing a mixture of a polymer or a resin and a transition metal compound, producing a fiber from the mixture, and heating the fiber under conditions effective to form a carbon nanotube-containing carbonaceous fiber. The polymer or resin is an aromatic polymer or a precursor thereof and the mixture is a neat mixture or is combined with a solvent. Also disclosed are a carbonaceous fiber or carbonaceous nanofiber sheet having at least 15 wt. % carbon nanotubes, a fiber or nanofiber sheet having the a polymer or a resin and the transition metal compound, and a fiber or nanofiber sheet having an aromatic polymer and metal nanoparticles.

A composition having nanoparticles of silicon carbide and a carbonaceous matrix or silicon matrix. The composition is not in the form of a powder. A composition having silicon and an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining silicon and the organic compound and heating to form silicon carbide or silicon nitride nanoparticles.

A composition having nanoparticles of a refractory-metal carbide or refractory-metal nitride and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising a metal component and an organic component. The metal component is nanoparticles or particles of a refractory metal or a refractory-metal compound capable of decomposing into refractory metal nanoparticles. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining particles of a refractory metal or a refractory-metal compound capable of reacting or decomposing into refractory-metal nanoparticles with an organic compound having a char yield of at least 60% by weight to form a precursor mixture.

A nanopowder and a method of making are disclosed. The nanopowder may be in the form of nanoparticles with an average size of less than about 200 nm and contain a reactive transition metal, such as hafnium, zirconium, or titanium. The nanopowder can be formed in a liquid under sonication by reducing a halide of the transition metal.

This disclosure concerns a method of making silicon carbide involving adding one from the group of rice husk material, sorghum, peanuts, maple leaves, and/or corn husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC).

The present invention provides for a composition comprising: a composition formed by heating to a temperature of from about 300° C. and above a mixture of:an organometallic composition and an aromatic-acetylene containing compound; andwherein said organometallic composition comprises the formula: wherein A is selected from the group consisting of H, and wherein M is a metal;wherein Rx and Ry are independently selected from the group consisting of an aromatic, a substituted aromatic group and combinations thereof;wherein m, s and z are ≧0;wherein m and s are independently determined in each repeating unit;wherein said aromatic-acetylene containing composition is 1,2,4,5-tetrakis(phenylethynyl)benzene, 1,2,4-tris(phenylethynyl)benzene or 1,3,5-tris(phenylethynyl)benzene; andwherein said organometallic composition and said aromatic-acetylene composition are molar mix proportions of between 1 and 99 of said organometallic composition and between 99 and 1 of said aromatic-acetylene composition.

A sensing device having: a bottom electrode, a dielectric on the bottom electrode, a grid of nanoelectrodes on the dielectric, and a top electrode in electrical contact with the grid. A method of chemical or biological sensing comprising: providing a grid of nanoelectrodes; exposing the grid to fluid suspected of containing a chemical or biological analyte; and measuring a change in the capacitance and conductance of the grid.

A method of electroplating a metal into a plurality of channels within an insulating material includes mounting the material to a cathode; placing the cathode into an electroplating solution containing the metal; placing an anode into the electroplating solution; connecting the cathode and the anode to a power supply; controlling operation of the power supply to provide a beginning current density during deposition at the insulating material and initiating electroplating of the metal within the plurality of channels starting at one face of the insulating material; and controlling operation of the power supply to provide a final current density during deposition at the insulating material and ending electroplating of the metal within the plurality of channels at the other face of the insulating material. The final current density is larger than the beginning current density, and the beginning current density is maintained at a level for a sufficient time to substantially prevent bubble formation during the electroplating.

This disclosure pertains to a process for making single crystal Group III nitride, particularly gallium nitride, at low pressure and temperature, in the region of the phase diagram of Group III nitride where Group III nitride is thermodynamically stable comprises a charge in the reaction vessel of (a) Group III nitride material as a source, (b) a barrier of solvent interposed between said source of Group III nitride and the deposition site, the solvent being prepared from the lithium nitride (Li3N) combined with barium fluoride (BaF2), or lithium nitride combined with barium fluoride and lithium fluoride (LiF) composition, heating the solvent to render it molten, dissolution of the source of GaN material in the molten solvent and following precipitation of GaN single crystals either self seeded or on the seed, maintaining conditions and then precipitating out.

A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and correlating a partial pressure of a carbon species in the exhaust gases to a carbon:silicon ratio in the chamber.

Disclosed herein is a structure having a spatially organized polymer nanostructured thin film and a metal coating on the film. The thin film is made by directing a monomer vapor or pyrolyzed monomer vapor towards a substrate at an angle other than perpendicular to the substrate, and polymerizing the monomer or pyrolyzed monomer on the substrate.

A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550° C. for at least two hours, and then heating the ampoule at a temperature between 550 and 950° C. for at least two hours. The BCSF material may be doped with potassium, rubidium, or sodium. Additionally, a p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.

A method of immersing an electrode in an electroplating solution while under vacuum, to substantially eliminate air and/or other gas from microscopic holes, cavities or indentations in the electrode. A method of electroplating an electrode in an electroplating solution including the application of a vacuum to the electrode while it is immersed in the electroplating solution to thereby substantially eliminate air and/or other gas from microscopic holes, cavities or indentations in the electrode. The electroplating liquid may be applied to only one side of the electrode (“the wet side”) in which case, sufficient time is allowed to pass for the immersion liquid to fill the microscopic through-holes, cavities or indentations in the electrode. An enhancement of this mode is to force liquid through the microscopic holes from the wet side. A highly penetrating solvent may be used as an immersion liquid. Alternatively, carbon dioxide can be used as an immersion liquid, in which case the liquid carbon dioxide may be obtained by adjusting the temperature and pressure conditions in a closed container of gaseous carbon dioxide.

A method of reversing Shockley stacking fault expansion includes providing a bipolar or a unipolar SiC device exhibiting forward voltage drift caused by Shockley stacking fault nucleation and expansion. The SiC device is heated to a temperature above 150° C. A current is passed via forward bias operation through the SiC device sufficient to induce at least a partial recovery of the forward bias drift.

This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.

A high power density photo-electronic and photo-voltaic material comprising a bio-inorganic nanophotoelectronic material with a photosynthetic reaction center protein encapsulated inside a multi-wall carbon nanotube or nanotube array. The array can be on an electrode. The photosynthetic reaction center protein can be immobilized on the electrode surface and the protein molecules can have the same orientation. A method of making a high power density photo-electronic and photo-voltaic material comprising the steps of immobilizing a bio-inorganic nanophotoelectronic material with a photosynthetic reaction center protein inside a carbon nanotube, wherein the immobilizing is by passive diffusion, wherein the immobilizing can include using an organic linker.

Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate.

A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

Silicon carbide PiN diodes are presented with reduced temperature coefficient crossover points by limited p type contact area to limit hole injection in the n type drift layer in order to provide a lower current at which the diode shifts from negative temperature coefficient to a positive temperature coefficient of forward voltage for mitigating thermal runaway.

Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.

A strain-balanced quantum well tunnel junction (SB-QWTJ) device. QW structures are formed from alternating quantum well and barrier layers situated between n++ and p++ layers in a tunnel junction formed on a substrate. The quantum well layers exhibit a compressive strain with respect to the substrate, while the barrier layers exhibit a tensile strain. The composition and layer thicknesses of the quantum well and barrier layers are configured so that the compressive and tensile strains in the structure are balanced.

A high power density photo-electronic and photo-voltaic material comprising a bio-inorganic nanophotoelectronic material with a photosynthetic reaction center protein encapsulated inside a multi-wall carbon nanotube or nanotube array. The array can be on an electrode. The photosynthetic reaction center protein can be immobilized on the electrode surface and the protein molecules can have the same orientation. A method of making a high power density photo-electronic and photo-voltaic material comprising the steps of immobilizing a bio-inorganic nanophotoelectronic material with a photosynthetic reaction center protein inside a carbon nanotube, wherein the immobilizing is by passive diffusion, wherein the immobilizing can include using an organic linker.

An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

A transistor device having a graphene base for the transport of electrons into a collector is provided. The transistor consists of a heterostructure comprising an electron emitter, an electron collector, and a graphene material base layer consisting of one or more sheets of graphene situated between the emitter and the collector. The transistor also can further include an emitter transition layer at the emitter interface with the base and/or a collector transition layer at the base interface with the collector. The electrons injected into the graphene material base layer can be “hot electrons” having an energy E substantially greater than EF, the Fermi energy in the graphene material base layer or can be “non-hot electrons” having an energy E approximately equal to than EF. The electrons can have the properties of ballistic transit through the base layer.

Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Quantum dots are modified with varying amounts of (a) a redox-active moiety effective to perform charge transfer quenching, and (b) a fluorescent dye effective to perform fluorescence resonance energy transfer (FRET), so that the modified quantum dots have a plurality of photophysical properties. The FRET and charge transfer pathways operate independently, providing for two channels of control for varying luminescence of quantum dots having the same innate properties.

A non-inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a nitrogen-polar III-Nitride first material, a barrier material layer, a two-dimensional hole gas in the barrier layer, and wherein the nitrogen-polar III-Nitride material comprises one or more III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is nitrogen-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the nitrogen-polar (001) face is the dominant face, growing a nucleation layer, growing a GaN epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.

A graphene device having a ribbon structure with soft boundaries formed between two thin parallel transport barriers in a “railroad track” configuration. Such a structure permits transport along the ribbon, and also permits transport of electrons across the barriers by means of resonant tunneling through quasi-bound states within the railroad track confinement. The transport barriers can be of any form of so long as transport through the barriers leads to the formation of isolated resonant bands with a transport gap. In some embodiments, the transport barriers can be in the form of a pair of parallel line defects, wherein the line defects delineate the central ribbon section and the two lateral sections. In some such embodiments, the line defects are chemically decorated by the adsorption of diatomic gases. In other embodiments, the transport barriers can be formed by the application of large local potentials directly to the graphene sheet.

A method for synthesizing Cu(InxGa1-x)S2 and Cu(InxGa1-x)Se2 nanopowders using flame spray pyrolysis to form solar cell absorber materials. The flame spray product is the oxide nanoparticles of the absorber materials (copper indium gallium oxide). The oxide nanoparticles may be deposited directly onto glass substrates. The oxide nanoparticles are then sulfurdized or selenized with a post deposition anneal directly on the substrate to form the absorber layer for a solar cell device.

A device with complementary non-inverted N-channel and inverted P-channel field effect transistors comprising a layer grown epitaxially on a substrate, a barrier layer, a two-dimensional electron gas in the first III-Nitride epitaxial layer, a second III-Nitride material layer, and a two-dimensional hole gas in the second III-Nitride epitaxial layer. A device with complementary inverted N-channel and non-inverted P-channel field effect transistors comprising a nitrogen-polar III-Nitride layer grown epitaxially, a barrier material layer, a two-dimensional hole gas, and a two-dimensional electron gas in the second III-Nitride epitaxial layer. A method of making complementary inverted P-channel and non-inverted N-channel III-Nitride field effect transistors. A method of making a complementary non-inverted P-channel field effect transistor and inverted N-channel III-Nitride field effect transistor on a substrate.

A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.

An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride barrier material, a second material layer, a two-dimensional hole gas in the second layer, and wherein the gallium-polar material comprises one or more III-Nitride epitaxial material layers grown such that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making an inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the gallium-polar (0001) face is the dominant face, growing a nucleation layer, growing a gallium-polar epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

A transistor device having a graphene base for the transport of electrons into a collector is provided. The transistor consists of a heterostructure comprising an electron emitter, an electron collector, and a graphene material base layer consisting of one or more sheets of graphene situated between the emitter and the collector. The transistor also can further include an emitter transition layer at the emitter interface with the base and/or a collector transition layer at the base interface with the collector. The electrons injected into the graphene material base layer can be “hot electrons” having an energy E substantially greater than EF, the Fermi energy in the graphene material base layer or can be “non-hot electrons” having an energy E approximately equal to than EF. The electrons can have the properties of ballistic transit through the base layer.

An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride grown epitaxially on a substrate, a barrier, a two-dimensional hole gas in the barrier layer material at the heterointerface of the first material, and wherein the gallium-polar III-Nitride material comprises III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face of a substrate so that the gallium-polar (0001) face is the dominant face for growth of III-Nitride epitaxial layer growth material, growing a GaN epitaxial layer, doping, growing a barrier, etching, forming a contact, performing device isolation, defining a gate opening, defining gate metal, making a contact window, and depositing and defining a thick metal.

A space solar power system that has sun-tracking curved reflectors, such as off-axis parabolic reflectors, a secondary reflector, and a power conversion module for converting the sunlight into microwave energy and transmit the energy to remote locations. The power conversion module can have a modular stepped conical shape, with additional radiator area configured in vertical sidewalls, horizontal radiator panels, or both. Hinged, fold-out units can house the microwave conversion electronics and the antenna for transmitting the microwave radiation to the remote ground station.

A non-volatile reconfigurable logic device executing logical operations and a memory function and controlled by a magnetic field is provided. The reconfigurable logic device includes i) at least one semiconductor device; and ii) a pair of magnetic field controlled devices respectively spaced apart from both sides of the semiconductor device and that are adapted to generate magnetic field leakage to control the semiconductor device. The semiconductor device includes i) a first semiconductor layer; and ii) a second semiconductor layer located on the first semiconductor layer. One of the first semiconductor layer and the second semiconductor layer is a p-type semiconductor layer and the other is an n-type semiconductor layer.

A polymer film comprising at least two layers, wherein each layer comprises a compound comprising the formula: wherein R1 and R2 are independently selected organic groups. A method of making a polymer film comprising the steps of: providing a monomer solution comprising one or more monomers comprising the formula: wherein R1 and R2 are independently selected organic groups; dispensing the monomer solution onto a substrate; heating the monomer solution on the substrate to polymerize the monomer; and repeating the steps of providing a monomer solution, dispensing, and heating one or more times, wherein the spin-coating is performed on top of the prior spin-coated layer.

This invention relates generally to a new class of chemoselective polymer materials. In particular, the invention relates to linear polycarbosilane compounds for use in various analytical applications involving sorbent polymer materials, including chromatoghraphy, chemical trapping, analyte collection, and chemical sensor applications. These polymers have pendant and terminal aryl, alkyl, alkenyl, and alkynyl groups that are functionalized with halogen substituted alcohol or phenol groups, having the general structure: wherein n is an integer greater than 1;wherein at least one of R1 and R2 is a linear or branched arm having at least one group independently selected from the group consisting of alkyl, alkenyl, alkynyl, and aryl groups, or combinations thereof, and having at least one halogen substituted alcohol or phenol groups attached thereto;wherein any said R1 and R2 aryl groups are attached to said [Si—X—]n either directly or through a short hydrocarbon chain;wherein any remaining said R1 or R2 group is a hydrocarbon or carbosilane group;wherein X is a polymer component selected from the group consisting of alkylene, alkenylene, alkynylene, arylene groups, and combinations thereof; andwherein Z1 and Z2 are end groups independently selected from the group consisting of alkyl, alkenyl, alkynyl, aryl, alkyl silanes, aryl silanes, hydroxyl, silicon hydride, alkoxides, phenols, halogen substituted alcohols, halogen substituted phenols, organosilyl, and combinations thereof. These polymeric materials are primarily designed to sorb hydrogen bond basic analytes such as organophosphonate esters (nerve agents and precursors) and nitro-substituted compounds (explosives).

A carborane-siloxane compound is provided having the repeat unit Q contains any of —SiR2—, —SiR2—O—, —C≡C—C≡C—, carboranyl, and U′. Each R and R′ is alkyl, aryl, alkylaryl, haloalkyl, haloaryl, or mixtures thereof. Each U′ is derivable from hydrosilation of an alkenyl or alkynyl group. Each T is alkyl, aryl, alkylaryl, haloalkyl, haloaryl, mixtures thereof, —(O—SiR′2)xH, or the repeat unit. Each x and x′ is a positive integer. The compounds may be made be reacting a carborane-siloxane precursor having unsaturated end groups with a siloxane crosslinker in the presence of a hydrosilation catalyst.

A cyanate ester system is disclosed. An aryl ether oligomer may be made from a dihydroxyaromatic compound and a dihaloaromatic compound in the presence of a base. The oligomer is then reacted with a cyanide compound in the presence of a base to form the cyanate ester shown below. The cyanate ester may then be cross-linked to a thermoset having triazine ring cross-links. HO—Ar2O—Ar1—O—Ar2nOH

A linear polymer comprising carborane, siloxane, and acetylene units, which may be cross-linked to a cured polymer and/or pyrolyzed to a ceramic.

A metallized thermoset containing a crosslinked metallized polymer having a backbone having an acetylenic repeat unit and —SiR2—(O—SiR2)n— and/or —SiR2—(O—SiR2)n-[Cb-SiR2—(O—SiR2)n]m—. At least one of the acetylenic repeat units contains a (MLx)y-acetylene complex. The metallized thermoset contains a crosslink between acetylene groups and/or a polycarbosiloxane crosslink. M is a metal, L is a ligand, x and y are positive integers, R is an organic group, Cb is a carborane, and n and m are greater than or equal to zero. A method of making a metallized thermoset by providing a metallized polymer and heating the metallized polymer. The metallized polymer contains the above backbone. Heating the metallized polymer forms crosslinks between acetylene groups and/or polycarbosiloxane crosslinks.

A ceramic made by providing a composition and pyrolyzing the composition. The composition has siloxane polymer, metallic polymer, siloxane thermoset, and/or metallic thermoset having a backbone having: an acetylenic repeat unit; and —SiR2—(O—SiR2)n— and/or —SiR2—(O—SiR2)n-[Cb-SiR2—(O—SiR2)n]m—. R is an organic group, Cb is a carborane, and n and m are integers greater than or equal to zero. Any crosslinking is a crosslink between acetylene groups and/or a polycarbosiloxane crosslink. The composition also has free metal atoms, metal clusters, or metal nanoparticles dispersed homogeneously throughout the composition; (MLx)y-acetylene complex in the backbone; and/or a metallic compound for forming a (MLx)y-acetylene complex. M is a metal, L is a ligand, x and y are positive integers.

A composite having an electroactive polymer coating on a porous carbon structure is disclosed. The composite may be used in capacitor electrodes. The composite may be made by self-limiting electropolymerization of a monomer on the carbon structure.

A carborane-siloxane compound is provided having the repeat unit Q contains any of —SiR2—, —SiR2—O—, —C≡C—C≡C—, carboranyl, and U′. Each R and R′ is alkyl, aryl, alkylaryl, haloalkyl, haloaryl, or mixtures thereof. Each U′ is derivable from hydrosilation of an alkenyl or alkynyl group. Each T is alkyl, aryl, alkylaryl, haloalkyl, haloaryl mixtures thereof, —(O—SiR′2)xH, or the repeat unit. Each x and x′ is a positive integer. The compounds may be made be reacting a carborane-siloxane precursor having unsaturated end groups with a siloxane crosslinker in the presence of a hydrosilation catalyst.

A linear polymer comprising carborane, siloxane, and acetylene units, which may be cross-linked to a cured polymer and/or pyrolyzed to a ceramic.

A fiber of linear polymer coated with a siloxane-carborane polymer or a thermoset or ceramic made therefrom. An organic fiber coated with a siloxane-carborane polymer or a thermoset or ceramic made therefrom and a surfactant. An organic fiber coated with a siloxane-carborane polymer made from a hydrosilation reaction of a siloxane-carborane compound containing at least two unsaturated carbon-carbon bonds and a silane compound or a thermoset or ceramic made therefrom. A method of coating a fiber by contacting a fiber to an aqueous solution of a siloxane-carborane polymer and a surfactant or to a solution of a siloxane-carborane polymer in a non-halogenated organic solvent. A method of contacting a fiber to a solution of a siloxane-carborane polymer, drying the coating to a temperature that does not change the polymer to a thermoset or ceramic, and using the dried, coated fiber in a process that requires that the fiber be flexible.

A compound having the formula: Each Ar is an aromatic group. Each R is an alkyl group. The value n is a positive integer. The values of w, x, y, and z are 0 or 1. If y is 0 than x and z are 0 and w is 1, and if y is 1 than x and z have different values and w equals z. A thermoset made by crosslinking a silane-containing compound with the above compound. A method of making the above compound when y is 1 by: reacting 4,4′-difluorobenzophenone with an aromatic diol to form an oligomer; and reacting the oligomer with a vinyl dialkylsilane. A method of making the below compound by: reacting 4,4′-difluorobenzophenone with a vinyl dialkylsilane. Each R is an independently selected alkyl group.

A compound having the formula: Each Ar is an aromatic group. Each R is an alkyl group. The value n is a positive integer. The values of w, x, y, and z are 0 or 1. If y is 0 than x and z are 0 and w is 1, and if y is 1 than x and z have different values and w equals z. A thermoset made by crosslinking a silane-containing compound with the above compound. A method of making the above compound when y is 1 by: reacting 4,4′-difluorobenzophenone with an aromatic diol to form an oligomer; and reacting the oligomer with a vinyl dialkylsilane. A method of making the below compound by: reacting 4,4′-difluorobenzophenone with a vinyl dialkylsilane. Each R is an independently selected alkyl group.

Compounds having the formulas below. R is an aromatic-containing group. Each M is an alkali metal. Each m is a positive integer. The value of n is a positive integer. The value p is 0 or 1. If p is 0 then n is 1. A thermoset made by curing a composition containing the below phthalonitrile monomers. A method of reacting a diphenyl acetylene compound with an excess of an aromatic diol in the presence of an alkali metal carbonate to form the above oligomer. A method of reacting a phenoxyphthalonitrile with an acetylene compound to form the phthalonitrile monomer below.

A method of: providing a solution of a dichloroaromatic compound having an electron-withdrawing group bound to each aromatic ring containing one of the chloride groups; an excess of a dihydroxyaromatic compound; an organic transition metal complex or a transition metal salt; a base; and a solvent; and heating the solution to a temperature at which the dichloroaromatic compound and the dihydroxyaromatic compound react to form an aromatic ether oligomer that is a dihydroxy-terminated compound or a dimetallic salt thereof. Water formed during the heating is concurrently distilled from the solution. A method of curing a phthalonitrile monomer in the presence of an acid and a curing agent to form a phthalonitrile thermoset.

A method of: providing a solution of a dichloroaromatic compound having an electron-withdrawing group bound to each aromatic ring containing one of the chloride groups; a dihydroxyaromatic compound; an organic transition metal complex or a transition metal salt; a base; and a solvent; and heating the solution to a temperature at which the dichloroaromatic compound and the dihydroxyaromatic compound react to form a dimetallic salt of an aromatic ether oligomer. The molar ratio of the dihydroxyaromatic compound to the dichloroaromatic compound is greater than 2:1. Water formed during the heating is concurrently distilled from the solution.

Disclosed herein are the compounds shown below. Also disclosed are methods of making the compounds. R1=—O—;R2=any alkyl chain;R3=—CH3, —CN, —COOCH3, -tetrazole, -imidazole, or -triazole;R4=—H or —R5;R5=—H, -halogen, —C≡CH, or —C≡C—;n is a positive integer; andm is a positive integer.

A method is provided for transferring an electro-optical layer grown on a growth substrate to a handle substrate. The method includes implanting hydrogen ions in the transfer substrate to form an intermediate hydrogen ion implant layer and bonding the transfer substrate to the handle substrate to form a joined structure. The joined structure is heated to a temperature sufficient to split the joined structure to thereby transfer a portion of the electro-optical layer to the handle substrate.

A semiconductor substrate incorporating a neutron conversion layer (such as boron-10) that is sensitive enough to permit the counting of single neutron events. The substrate includes an active semiconductor device layer, a base substrate, an insulating layer provided between the active semiconductor device layer and the base substrate, and a neutron conversion layer provided between the active semiconductor device layer and the base substrate. The neutron conversion layer is located within the insulating layer, between the insulating layer and the base substrate or between the active semiconductive device layer and the insulating layer. A barrier layer is provided between at least one of the neutron conversion layer and the active semiconductor device layer and the neutron conversion layer and the base substrate to prevent diffusion of the neutron conversion material provided in the neutron conversion layer. Further, a plurality of trenches may be formed in the active semiconductor device layer. In such a case, a trench neutron conversion layer is formed in at least one of the trenches to improve device sensitivity.

The invention comprises a chemical composition with the structure shown below. The composition can be polymerized or pyrolyzed, forming transition metal nanoparticles homogeneously dispersed in a thermoset or carbon composition. The size of the nanoparticles can be controlled by manipulating the number and arrangement of functional groups in the composition and by changing the conditions of the polymerization or pyrolysis. The resulting thermosets and carbon compositions have useful magnetic, electric, mechanical, catalytic and/or optical properties. wherein A is selected from the group consisting of H, wherein M is a metal selected independently from the group consisting of Fe, Mn, Ru, Co, Ni, Cr and V;wherein Rx is independently selected from the group consisting of an aromatic, a substituted aromatic group and combinations thereof;wherein Ry is independently selected from the group consisting of an aromatic, a substituted aromatic group and combinations thereof;wherein m is ≧0;wherein s is ≧0;wherein z is ≧0; andwherein m and s are independently determined in each repeating unit.

This invention pertains to transfer of a solid target material onto a substrate by vaporizing the material by irradiating it with intense light of a resonant vibrational mode of the material and depositing the vaporized material on a substrate in a solid form.

A computer-implemented method as follows. Providing a list of target sequences associated with one or more organisms. Providing a list of candidate prototype sequences suspected of hybridizing to one or more of the target sequences. Generating a collection of probes corresponding to each candidate prototype sequence, each collection of probes having a set of probes for every subsequence. The sets consist of the corresponding subsequence and every variation of the corresponding subsequence formed by varying a center nucleotide of the corresponding subsequence. Generating a set of fragments corresponding to each target sequence. Calculating the binding free energy of each fragment with a perfect complimentary sequence of the fragment. Determining which extended fragments are perfect matches to any of the probes. Assembling a base call sequence corresponding to each candidate prototype sequence.

This invention discloses and claims the low temperature reduction and purification of refractory metals, metal compounds, and semi-metals. The reduction is accomplished using non-aqueous ionic solvents in an electrochemical cell with the metal entity to be reduced. Using this invention, TiO2 is reduced directly to Ti metal at room temperature.

A process of making metal nanoparticles comprising the steps of: providing a precursor composition comprising at least one metallic compound and at least one organic compound; wherein the organic compound is selected from the group consisting of an ethynyl compound, a metal-ethynyl complex, and combinations thereof; wherein the precursor composition is a liquid or solid at room temperature; and heating the precursor composition under conditions effective to produce metal nanoparticles. A metal nanoparticle composition comprising metal nanoparticles dispersed homogenously in a matrix selected from the group consisting of ethynyl polymer, crosslinked ethynyl polymer, amorphous carbon, carbon nanotubes, carbon nanoparticles, graphite, and combinations thereof.

A cyanate ester system is disclosed. An aryl ether oligomer may be made from a dihydroxyaromatic compound and a dihaloaromatic compound in the presence of a base. The oligomer is then reacted with a cyanide compound in the presence of a base to form the cyanate ester shown below. The cyanate ester may then be cross-linked to a thermoset having triazine ring cross-links HO—Ar2O—Ar1—O—Ar2nOH.

A method of bonding a wafer to a substrate comprising the steps of: providing a wafer having a front surface and a back surface; attaching the front surface of the wafer to a support; thinning the wafer from the back surface; bonding the back surface of the wafer to a substrate using a thin bonding technique; and removing the support from the front surface of the wafer. A circuit comprising: a substrate; and a wafer; wherein the wafer is at most about 50 microns thick; wherein the wafer has a front surface comprising features; and wherein the wafer has a back surface bonded to the substrate using a thin bonding technique.

This invention pertains to an electronic device containing a semi-insulating substrate, a buffer layer of an antimony-based material disposed on said substrate, a channel layer of InAsySb1-y material disposed on said buffer layer, a barrier layer of an antimony-based disposed on said channel layer, and a cap layer of InAsySb1-y material disposed on said barrier layer, wherein the device can have frequency of on the order of 500 GHz and a reduced power dissipation.

This invention pertains to a chalcogenide glass of low optical loss that can be on the order of 30 dB/km or lower, and to a process for preparing the chalcogenide glass. The process includes the steps of optionally preparing arsenic monochalcogenide precursor or the precursor can be provided beforehand; dynamically distilling the precursor in an open system under vacuum from a hot section to a cold section to purify same; homogenizing the precursor in a closed system so that it is of a uniform color; disposing the distilled or purified precursor and at least one chalcogenide element at a hot section of an open distillation system; dynamically distilling under vacuum in an open system so that the precursor and the at least one chalcogenide element are deposited at a cold section of the open system in a more purified state; homogenizing the precursor and the at least chalcogenide element in a closed system while converting the precursor and the at least one chalcogenide element from crystalline phase to glassy phase.

The present invention is phthalocyanine compounds with peripheral siloxane substitution, as well as methods for making these compounds and various uses thereof, having the basic structure: wherein —W—X—Y—Z are peripheral groups comprising individual W, X, Y, and Z subgroups;W is a linkage represented by the formula: —D—(R1)0.1—, where D═S or O;X is: —(CH2)n—, n=2 to 8;Y is a siloxane chain;Z is an aryl or alkyl terminal cap;M is two protons or a metal ion; and forms a transparent film of high optical quality with large nonlinear absorption and thermal refraction, free of scattering from solid or liquid crystalline domains making them highly suitable for use as the active component in thin films protective eye wear, and optical data storage applications.

A thermoset and method of making such by crosslinking a mixture of a polyhedral oligomeric silsesquioxane having pendent siloxane groups or unsaturated carbon bonds and a siloxylcarborane compound having unsaturated carbon bonds.

A polymer film comprising at least two layers, wherein each layer comprises a compound comprising the formula: wherein R1 and R2 are independently selected organic groups. A method of making a polymer film comprising the steps of: providing a monomer solution comprising one or more monomers comprising the formula: wherein R1 and R2 are independently selected organic groups; dispensing the monomer solution onto a substrate; heating the monomer solution on the substrate to polymerize the monomer; and repeating the steps of providing a monomer solution, dispensing, and heating one or more times, wherein the spin-coating is performed on top of the prior spin-coated layer.

A fiber of linear polymer coated with a siloxane-carborane polymer or a thermoset or ceramic made therefrom. An organic fiber coated with a siloxane-carborane polymer or a thermoset or ceramic made therefrom and a surfactant. An organic fiber coated with a siloxane-carborane polymer made from a hydrosilation reaction of a siloxane-carborane compound containing at least two unsaturated carbon-carbon bonds and a silane compound or a thermoset or ceramic made therefrom. A method of coating a fiber by contacting a fiber to an aqueous solution of a siloxane-carborane polymer and a surfactant or to a solution of a siloxane-carborane polymer in a non-halogenated organic solvent. A method of contacting a fiber to a solution of a siloxane-carborane polymer, drying the coating to a temperature that does not change the polymer to a thermoset or ceramic, and using the dried, coated fiber in a process that requires that the fiber be flexible.

A method of making metal nanoparticles and carbon nanotubes is disclosed. A mixture of a transition metal compound and an aromatic polymer, a precursor of an aromatic polymer, or an aromatic monomer is heated to form a metal nanoparticle composition, optionally containing carbon nanotubes.

A structure including a Si1-xGex substrate and a distributed Bragg reflector layer disposed directly onto the substrate. The distributed Bragg reflector layer includes a repeating pattern that includes at least one aluminum nitride layer and a second layer having the general formula AlyGa1-yN. Another aspect of the present invention is various devices including this structure. Another aspect of the present invention is directed to a method of forming such a structure comprising providing a Si1-xGex substrate and depositing a distributed Bragg reflector layer directly onto the substrate. Another aspect of the present invention is directed to a photodetector or photovoltaic cell device, including a Si1-xGex substrate device, a group III-nitride device and contacts to provide a conductive path for a current generated across at least one of the Si1-xGex substrate device and the group III-nitride device upon incident light.

This invention relates generally to a new class of chemoselective polymer materials primarily designed to sorb hydrogen bond basic analytes such as organophosphonate esters (nerve agents and precursors) and nitro-substituted compounds (explosives). In particular, the invention relates to linear polycarbosilane compounds for use in various analytical applications involving sorbent polymer materials, including chromatography, chemical trapping, analyte collection, and chemical sensor applications. These polymers have pendant and terminal aryl, alkyl, alkenyl, and alkynyl groups that are functionalized with halogen substituted alcohol or phenol groups, having the general structure: wherein n is an integer greater than 1;wherein at least one of R1 and R2 is a pendant group having at least one aryl group independently selected from the group consisting of a phenol, a halogen substituted phenol, and an aryl hydrocarbon with a halogen substituted alcohol substitutent, or combinations thereof;wherein any said R1 and R2 aryl groups are attached to said [Si—X—], either directly or through a short hydrocarbon chain;wherein any remaining said R1 or R2 group is a hydrocarbon or carbosilane group;wherein X is a polymer component selected from the group consisting of alkylene, alkenylene, alkynylene, arylene groups, and combinations thereof; andwherein Z1 and Z2 are end groups independently selected from the group consisting of alkyl, alkenyl, alkynyl, aryl, alkyl silanes, aryl silanes, hydroxyl, silicon hydride, alkoxides, phenols, halogen substituted alcohols, halogen substituted phenols, organosilyl, and combinations thereof.

A device and method for depositing a material of interest onto a receiving substrate includes a first laser and a second laser, a receiving substrate, and a target substrate. The target substrate comprises a laser transparent support having a back surface and a front surface. The front surface has a coating that comprises the source material, which is a material that can be transformed into the material of interest. The first laser can be positioned in relation to the target substrate so that a laser beam is directed through the back surface of the target substrate and through the laser-transparent support to strike the coating at a defined location with sufficient energy to remove and lift the source material from the surface of the support. The receiving substrate can be positioned in a spaced relation to the target substrate so that the source material is deposited at a defined location on the receiving substrate. The second laser is then positioned to strike the deposited source material to transform the source material into the material of interest.

A method of: introducing hydrogen and a feed gas containing at least 50 vol % carbon dioxide into a reactor containing a Fischer-Tropsch catalyst; and heating the hydrogen and carbon dioxide to a temperature of at least about 190° C. to produce hydrocarbons in the reactor. An apparatus having: a reaction vessel for containing a Fischer-Tropsch catalyst, capable of heating gases to at least about 190° C.; a hydrogen delivery system feeding into the reaction vessel; a carbon dioxide delivery system for delivering a feed gas containing at least 50 vol % carbon dioxide feeding into the reaction vessel; and a trap for collecting hydrocarbons generated in the reaction vessel.

This invention pertains to a process of bonding a magnesium aluminate spinel article or articles and a germanate glass article or articles including the step of heating them together above the softening temperature of the glass.

A compound having the formula below. Each R is methyl or phenyl; R2 comprises one or more of silane, siloxane, and aromatic groups; n is a nonnegative integer; and m is 1 or 2. The dashed bond is a single bond and the double dashed bond is a double bond, or the dashed bond is a double bond and the double dashed bond is a triple bond. A polymer made by a hydrosilation reaction of a polyhedral oligomeric silsesquioxane having pendant siloxane groups with an acetylene- and silicon-containing compound having at least two vinyl or ethynyl groups, and a crosslinked polymer thereof. The reaction occurs between the pendant siloxane groups and the vinyl or ethynyl groups.

Disclosed herein is a composition having a thermoset polymer and a plurality of hollow microsphere homogenously dispersed in the composition. The polymer is a cyanate ester thermoset, a phthalonitrile thermoset, a crosslinked acetylene thermoset, or a hydrosilation thermoset. Also disclosed herein is a method of: providing a thermosetting compound; adding microspheres to the thermosetting compound; and mixing the thermosetting compound while initiating crosslinking of the thermosetting compound.

A ceramic having at least about 90% by weight magnesium aluminate and having a bulk scattering and absorption loss of less than about 1/cm at any wavelength in a range of about 0.23 to about 5.3 microns or 0.2/cm at any wavelength in a range of about 0.27 to about 4.5 microns. A method of making a ceramic by providing a plurality of particles having a magnesium aluminate core and a fluoride salt coating; heating the particles in an oxidizing atmosphere to a temperature in the range of about 400° C. to about 750° C.; and sintering the particles to form a solid ceramic.

High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.

A method of immersing an electrode in an electroplating solution while under vacuum, to substantially eliminate air and/or other gas from microscopic holes, cavities or indentations in the electrode. A method of electroplating an electrode in an electroplating solution including the application of a vacuum to the electrode while it is immersed in the electroplating solution to thereby substantially eliminate air and/or other gas from microscopic holes, cavities or indentations in the electrode. The electroplating liquid may be applied to only one side of the electrode (“the wet side”) in which case, sufficient time is allowed to pass for the immersion liquid to fill the microscopic through-holes, cavities or indentations in the electrode. An enhancement of this mode is to force liquid through the microscopic holes from the wet side. A highly penetrating solvent may be used as an immersion liquid. Alternatively, carbon dioxide can be used as an immersion liquid, in which case the liquid carbon dioxide may be obtained by adjusting the temperature and pressure conditions in a closed container of gaseous carbon dioxide.

Disclosed herein are the compounds shown below. Each R is an organic group, Cb is a carborane group, and —C6H4— is phenylene. The value of each m is a nonnegative integer, q is 0 or 1, with the proviso that if q is 0 then m is 0 or 1, p is a positive integer, r is a positive integer, and n is an integer greater than or equal to 10. Also disclosed are methods of making and crosslinking the compounds. —{SiR2—([O]q—SiR2)m-[Cb-SiR2—([O]q—SiR2)m]p—C≡C—C6H4—C≡C}— —{SiR2—(O—SiR2)m—C≡C—C6H4—C≡C}n—; —{SiR2—([O]q—SiR2)m—[C≡C—C6H4—C≡C—SiR2—([O]q—SiR2)m]p-Cb-[SiR2—([O]q—SiR2)m-Cb]r}-

Methods of forming a graphene material on a surface are presented. A metal material is disposed on a material substrate or material layer and is infused with carbon, for example, by exposing the metal to a carbon-containing vapor. The carbon-containing metal material is annealed to cause graphene to precipitate onto the bottom of the metal material to form a graphene layer between the metal material and the material substrate/material layer and also onto the top and/or sides of the metal material. Graphene material is removed from the top and sides of the metal material and then the metal material is removed, leaving only the graphene layer that was formed on the bottom of the metal material. In some cases graphene material that formed on one or more side of the sides of the metal material is not removed so that a vertical graphene material layer is formed.

Provided herein are the polymers shown below. The value n is a positive integer. R1 is an organic group, and each R2 is H or a chemisorbed group, with at least one R2 being a chemisorbed group. The polymer may be a nanostructured film. Also provided herein is a method of: converting a di-p-xylylene paracyclophane dimer to a reactive vapor of monomers; depositing the reactive vapor onto a substrate held at an angle relative to the vapor flux to form nanostructured poly(p-xylylene) film; reacting the film with an agent to form hydrogen atoms that are reactive with a precursor of a chemisorbed group, if the film does not contain the hydrogen atoms; and reacting the hydrogen atoms with the precursor. Also provided herein is a device having a nanostructured poly(p-xylylene) film on a pivotable substrate. The film has directional hydrophobic or oleophobic properties and directional adhesive properties.

A spatially organized polymer nanostructured thin film and a ligand adsorbate attached to the polymer nanostructured thin film and, optionally, an additional material or materials attached to the ligand adsorbate. A method for forming a structure by: providing a spatially organized polymer nanostructured thin film and a ligand adsorbate, and adsorbing the ligand adsorbate onto the thin film and, optionally, binding additional material or materials to the ligand adsorbate.

A hexafluorodimethylcarbinol terminated compound, method of making it, and a composition of matter are disclosed. The compound may have the formula (CF3)2C(OH)-L-M-R. The substructure L may be selected from an optionally substituted propenylene group (—CH2CH═CH—) and trimethylene group (—CH2CH2CH2—). The substructure M may be selected from a substituted or unsubstituted methylene chain, a substituted or unsubstituted oxyalkylene chain, and a silicon-containing chain or combination thereof. In one embodiment, M may be selected from —(CH2)n—, —(OCH2CH2)m—, and —(Si(CH3)2O)p—Si(CH3)2—(CH2)q—, wherein n is at least 1, e.g., n is up to 10, m can be at least 1, e.g., m is up to 10, p can be 0 and in one embodiment is from 1 to 10, and wherein q can be 1 and in one embodiment is from 1 to 12. The substructure R represents one of a halogen, —SH, —SZ, —S—S-M-L-C(CF3)2(OH), wherein Z represents a thiol protecting group.

High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.

A method of: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxial grow silicon carbide on a wafer in the growth chamber; stopping or reducing the flow of the silicon source gas to interrupt the silicon carbide growth and maintaining the flow of the carrier gas while maintaining an elevated temperature in the growth chamber for a period of time; and resuming the flow of the silicon source gas to reinitiate silicon carbide growth. The wafer remains in the growth chamber throughout the method.

A process of making metal nanoparticles comprising the steps of: providing a precursor composition comprising at least one metallic compound and at least one organic compound; wherein the organic compound is selected from the group consisting of an ethynyl compound, a metal-ethynyl complex, and combinations thereof, wherein the precursor composition is a liquid or solid at room temperature; and heating the precursor composition under conditions effective to produce metal nanoparticles. A metal nanoparticle composition comprising metal nanoparticles dispersed homogenously in a matrix selected from the group consisting of ethynyl polymer, crosslinked ethynyl polymer, amorphous carbon, carbon nanotubes, carbon nanoparticles, graphite, and combinations thereof.

The ionic conjugates include an inorganic particle electrostatically associated with a macromolecule which can interact specifically with predetermined chemical species or biological targets.

Quantum dots are modified with varying amounts of (a) a redox-active moiety effective to perform charge transfer quenching, and (b) a fluorescent dye effective to perform fluorescence resonance energy transfer (FRET), so that the modified quantum dots have a plurality of photophysical properties. The FRET and charge transfer pathways operate independently, providing for two channels of control for varying luminescence of quantum dots having the same innate properties.

A crosslinked polymer and process of making it are disclosed. A copolymer having at least one alkyne group, carborane group, and alkylsiloxane group is reacted with a siloxane crosslinker in a hydrosilation reaction. This produces a crosslinked polymer where the crosslink sites are reacted alkyne groups.

A particle having a magnesium aluminate core and a fluoride salt coating on the core. The particle has been heated in an oxidizing atmosphere to a temperature in the range of about 400° C. to about 750° C. A method of making a particle by mixing a magnesium aluminate core with a solution of a fluoride salt in a solvent to form a slurry and spraying the slurry into a drying column. The slurry enters the column as an aerosol under thermal conditions that avoid boiling the solvent. The thermal conditions in the column evaporate the solvent as the aerosol moves through the column to form a coating of the fluoride salt on the core while substantially avoiding spalling.

A method of laser forward transfer is disclosed. Photon energy is directed through a photon-transparent support and absorbed by an interlayer coated thereon. The energized interlayer causes the transfer of a biological material coated thereon across a gap and onto a receiving substrate.

A method of laser forward transfer is disclosed. Photo energy is directed through a photon-transparent support and absorbed by an interlayer coated thereon. The energized interlayer causes the transfer of specific regions of a heterogeneous tissue sample coated thereon across a gap and onto a receiving substrate or into a receiving vessel.

An embodiment of the invention includes a particle. The particle includes a first yttria core; and a fluoride salt coating on the first yttria core. The coating is sufficiently continuous to prevent a large number of sites where a second yttria core may come into contact with the first yttria core. Optionally, the particle has been heated in an oxidizing atmosphere to a temperature in the range of about 400° C. to about 750° C. Optionally, the particle is substantially free of at least one of carbon-containing species and water. Optionally, the fluoride salt is lithium fluoride. Optionally, the fluoride salt is aluminum fluoride.

A gain medium and an interband cascade laser, an interband cascade amplifier, and an external cavity laser having the gain medium are presented. The gain medium can include any one or more of the following features: (1) the active quantum well region includes a thick and In-rich GaInSb hole well; (2) the hole injector includes two or more GaSb hole wells having thicknesses in a specified range; (3) the electron and hole injectors are separated by a thick AlSb barrier to suppress interband absorption; (4) a first electron barrier of the hole injector region separating the hole injector region from an adjacent active quantum well region has a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states to not more than 5%; (5) the thickness of the first InAs electron well in the electron injector, as well as the total thickness of the electron injector, is reduced; (6) the number of cascaded stages is reduced; (7) transition regions are inserted at the interfaces between the various regions of the gain medium so as to smooth out abrupt shifts of the conduction-band minimum; (8) thick separate confinement layers comprising Ga(InAlAs)Sb are disposed between the active gain region and the cladding to confine the optical mode and increase its overlap with the active stages; and (9) the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AlSb SL cladding layers. An interband cascade laser, an interband cascade amplifier, or an external cavity laser employing a gain medium having these features can emit at a wavelength of about 2.5 μm to about 8 μm at high temperatures.

This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

A method of bonding a wafer to a substrate comprising the steps of: providing a wafer having a front surface and a back surface; attaching the front surface of the wafer to a support; thinning the wafer from the back surface; bonding the back surface of the wafer to a substrate using a thin bonding technique; and removing the support from the front surface of the wafer. A circuit comprising: a substrate; and a wafer; wherein the wafer is at most about 50 microns thick; wherein the wafer has a front surface comprising features; and wherein the wafer has a back surface bonded to the substrate using a thin bonding technique.

A composition having: a proanthocyanidin; and a macromolecule, an assembly of macromolecules, a semi-solid, or a solid surface to which the proanthocyanidin is immobilized.

A particle having a magnesium aluminate core and a fluoride salt coating on the core. The particle has been heated in an oxidizing atmosphere to a temperature in the range of about 400° C. to about 750° C. A method of making a particle by mixing a magnesium aluminate core with a solution of a fluoride salt in a solvent to form a slurry and spraying the slurry into a drying column. The slurry enters the column as an aerosol under thermal conditions that avoid boiling the solvent. The thermal conditions in the column evaporate the solvent as the aerosol moves through the column to form a coating of the fluoride salt on the core while substantially avoiding spalling.

This invention pertains to product and process. The product is a transparent product of a density in excess 99.5% comprising spinel and having uniform mechanical properties. The process pertains to fabrication of a transparent spinel product comprising the steps of dissolving a sintering aid in water to form a neutral sintering aid solution, adding a suitable additive to the sintering aid solution, applying the sintering aid solution to spinel particles to form a spinel dispersion, sub-dividing or atomizing the spinel dispersion to form droplets comprising one or more spinel particles coated with the final spinel solution, drying the droplets to form dried coated particles comprising one or more spinel particles coated with a dried layer of the sintering aid, and densifying the dried coated particles to form a transparent spinel product having, uniform optical and mechanical properties in absence of grains of exaggerated size.

A method of making a polymer by providing an imine and reacting the imine with a polyisocyanate in the presence of a hydroxyl group. The imine is a polyaldimine, hydroxyaldimine, polyketimine, or hydroxyketimines. The polymer has urea linkages formed from the imine and polyisocyanate and urethane linkages formed from the hydroxyl group and the polyisocyanate. The polymer has at least as many urea linkages as urethane linkages. A polymer having urea units and urethane units having a molar ratio of at least about 2:1. A polymer comprising a urea-urethane repeat unit.

Disclosed herein is a composition having: a polymer having a carbosilane or siloxane backbone and pendant hydrogen-bond acidic groups; and a filler material having polar groups. The polymer is not covalently bound to the filler material.

A metallized polymer having a backbone having an acetylenic repeat unit and —SiR2—(O—SiR2)n— and/or —SiR2—(O—SiR2)n-[Cb-SiR2—(O—SiR2)n]m—. At least one of the acetylenic repeat units contains a (MLx)y-acetylene complex. M is a metal, L is a ligand, x and y are positive integers, R is an organic group, Cb is a carborane, and n and m are greater than or equal to zero. A composition containing a siloxane polymer and a metallic compound. The siloxane polymer has a backbone having one or more acetylene groups and —SiR2—(O—SiR2)n— and/or —SiR2—(O—SiR2)n-[Cb-SiR2—(O—SiR2)n]m—. The metallic compound is capable of reacting with the acetylene group to form a (MLx)y-acetylene complex.

A polyurethane coating made by: applying to a surface a polyol composition and an isocyanate composition, such that a mixture of the polyol composition and the isocyanate composition is formed during the application; and allowing the mixture to cure to the polyurethane coating. The polyol composition has a polyol monomer having the chemical formula: R1 is a divalent radical selected from aliphatic, aromatic, and ether-containing group. R2 is a monovalent radical selected from aliphatic, aromatic, ester-containing group, ether-containing group, and acrylic-containing group. R2 is free of —O—CH2—CH(OH)— groups, and the polyol monomer is free of epoxy groups and amino hydrogens. The isocyanate composition comprises an isocyanate compound having at least two isocyanate groups. The polyol composition or the isocyanate composition comprises a water scavenger. The polyol composition or the isocyanate composition comprises a polyurethane catalyst.

This invention pertains to heterojunction bipolar transistors containing a semiconductor substrate, a buffer layer of an antimony-based material deposited on the substrate, a sub-collector layer of an antimony-based material deposited on the buffer layer, a collector layer of an antimony-based material deposited on the sub-collector layer, a base layer of an antimony-based material deposited on the collector layer, an emitter layer of an antimony-based material deposited on the base layer, and a cap layer of an antimony-based material deposited on the emitter layer.

A composite having an electroactive polymer coating on a porous carbon structure is disclosed. The composite may be used in capacitor electrodes. The composite may be made by self-limiting electropolymerization of a monomer on the carbon structure.

A composition of matter containing a solution made from: from about 18 to about 70 wt % of a sugar; from about 2 to about 10 wt % of a water-soluble polysaccharide; from about 0.1 to about 1 wt % of a phosphate; from about 0.01 to about 1 wt % of a surfactant; and from about 18 wt % to remainder of water. A method for dust and sand abatement and erosion prevention by: providing the above solution, applying the solution to sand or dust particles wherein the solution binds to the particles; and allowing the solution to bind to the sand or dust particles and to dry thereby forming a hardened crust.

A method and a ceramic made therefrom by: providing a composition of a compound having the formula below and a metallic component, and pyrolyzing the composition. R is an organic group. The value n is a positive integer. Q is an acetylenic repeat unit having an acetylene group, crosslinked acetylene group, (MLx)y-acetylene complex, and/or crosslinked (MLx)y-acetylene complex. M is a metal. L is a ligand. The values x and y are positive integers. The metallic component is the (MLx)y-acetylene complex in the compound or a metallic compound capable of reacting with the acetylenic repeat unit to form the (MLx)y-acetylene complex. The ceramic comprises metallic nanoparticles.

A molecularly imprinted material made from polymerizing a monomer having the structural formula (OR)3Si—B-A-B—Si(OR)3. A is a divalent organic group, B is a saturated or unsaturated divalent hydrocarbon group or a covalent bond, and R is an independently selected saturated or unsaturated monovalent hydrocarbon group. A preconcentrator having: a container comprising in inlet and an outlet and the above material within the container. The inlet is capable of allowing a fluid to enter the container. The outlet is capable of being coupled to a sensor and of allowing the fluid to exit the container.

A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.

A thermoset and method of making such by crosslinking a mixture of a polyhedral oligomeric silsesquioxane having pendent siloxane groups or unsaturated carbon bonds and a siloxylcarborane compound having unsaturated carbon bonds.

This invention pertains to a chalcogenide glass of low optical loss that can be on the order of 30 dB/km or lower, and to a process for preparing the chalcogenide glass. The process includes the steps of optionally preparing arsenic monochalcogenide precursor or the precursor can be provided beforehand; dynamically distilling the precursor in an open system under vacuum from a hot section to a cold section to purify same; homogenizing the precursor in a closed system so that it is of a uniform color; disposing the distilled or purified precursor and at least one chalcogenide element at a hot section of an open distillation system; dynamically distilling under vacuum in an open system so that the precursor and the at least one chalcogenide element are deposited at a cold section of the open system in a more purified state; homogenizing the precursor and the at least chalcogenide element in a closed system while converting the precursor and the at least one chalcogenide element from crystalline phase to glassy phase.

A safe, biodegradable, environmentally benign, non-toxic, water-soluble solution consisting of water, sugar, starch, sodium phosphate, and surfactant that can be applied to dust and sand particles to bind the particles and form a hardened crust. Also disclosed is the related method for abating dust and preventing erosion.

Provided is a method for controllably activating a surface for stable amine-reactive chemistries. A surface containing nitride is exposed to a plasma having a reactive species containing hydrogen for a period of time sufficient to activate the substrate for amine-reactive chemistries. Amine-reactive chemical processes can then be applied to the activated surface to reliably and controllably bond molecules directly to said surface. The method is designed to create stable primary amines on the nitride substrate, so that any subsequent amine-reactive chemistry may proceed in a controlled manner that is directly proportional to the density of surface amines so created.

A method of laser forward transfer is disclosed. Photon energy is directed through a photon-transparent support and absorbed by a polymer interlayer coated thereon. The energized interlayer causes the transfer of a biological material coated thereon across a gap and onto a receiving substrate.

A process for producing synthetic hydrocarbons that reacts carbon dioxide, obtained from seawater of air, and hydrogen obtained from water, with a catalyst in a chemical process such as reverse water gas shift combined with Fischer Tropsch synthesis. The hydrogen is produced by nuclear reactor electricity, nuclear waste heat conversion, ocean thermal energy conversion, or any other source that is fossil fuel-free, such as wind or wave energy. The process can be either land based or sea based.

A linear polymer comprising carborane, siloxane, and acetylene units, which may be cross-linked to a cured polymer and/or pyrolyzed to a ceramic.

This invention pertains to a composite of AlON and a germanate glass, and to a process for bonding AlON to the glass. The composite includes AlON and glass bonded together and having transmission in the visible and mid-infrared wavelength region. The process includes the step of heating them together above the softening temperature of the glass, the composite having excellent, i.e., typically in excess of about 60%, transmission in the 0.4-5 wavelength region.

Compounds having the formulas below. R is an aromatic-containing group. Each M is an alkali metal. Each m is a positive integer. The value of n is a positive integer. The value p is 0 or 1. If p is 0 then n is 1. A thermoset made by curing a composition containing the below phthalonitrile monomers. A method of reacting a diphenyl acetylene compound with an excess of an aromatic diol in the presence of an alkali metal carbonate to form the above oligomer. A method of reacting a phenoxyphthalonitrile with an acetylene compound to form the phthalonitrile monomer below.

A compound having the formula below. Each R is methyl or phenyl; R2 comprises one or more of silane, siloxane, and aromatic groups; n is a nonnegative integer; and m is 1 or 2. The dashed bond is a single bond and the double dashed bond is a double bond, or the dashed bond is a double bond and the double dashed bond is a triple bond. A polymer made by a hydrosilation reaction of a polyhedral oligomeric silsesquioxane having pendant siloxane groups with an acetylene- and silicon-containing compound having at least two vinyl or ethynyl groups, and a crosslinked polymer thereof. The reaction occurs between the pendant siloxane groups and the vinyl or ethynyl groups.

A gate after diamond transistor and method of making comprising the steps of depositing a first dielectric layer on a semiconductor substrate, depositing a diamond particle nucleation layer on the first dielectric layer, growing a diamond thin film layer on the first dielectric layer, defining an opening for the gate in the diamond thin film layer, patterning of the diamond thin film layer for a gate metal to first dielectric layer surface, etching the first dielectric layer, depositing and defining a gate metal, and forming a contact window opening in the diamond thin film layer and the first dielectric layer to the ohmic contact.

This disclosure involves a formula, mixing procedure, etching technique and application of an etchant for revealing defects in T2SL's grown lattice matched to (100) GaSb. The etching agent comprises a (2.5:4.5:16.5:280) solution by volume or (1%:2%:9%:88%) by weight, of HF:H2O2:H2SO4:H2O. The etchant is made by mixing (49%) hydrofluoric aqueous solution with (30%) water-based peroxide, followed by sulfuric acid, and diluted with de-ionized H2O (DI-water).

A method of making a liquid crystalline fiber is disclosed. A copolymer having a liquid crystalline side group and a crosslinking side group is crosslinked. A fiber of the crosslinking copolymer is drawn before the crosslinking reaction is complete.

Disclosed is a new ionic liquid monomer salt and methods of is synthesis and polymerization. The ionic liquid monomer salt is prepared by mixing equimolar amounts of an amine, such as tris[2-(2-methoxyethoxy)-ethyl]amine and an acid functionalized polymerizable monomer, such as 2-acrylamido-2-methyl-1-propanesulfonic acid, which is stirred at ambient temperature until salt formation is complete. Also disclosed is a new ionic liquid polymer salts and method for making the same. The synthesis of 2-acrylamido-2-methyl-1-propanesulfonic acid-ammonium salt polymer is accomplished by adding 2,2′-azobisisobutyronitrile (AIBN) to the ionic liquid monomer salt and heating the homogeneous melt at 70° C. for 18 hr.

Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.

The present embodiments relate methods of preparing metal carbides, for example some embodiments relate to methods of preparing metal carbides that do not contain the formation of an intermediate oxide compound. Some embodiments relate to methods that do not employ hydrocarbons in the reaction. Some embodiments relate to a method of preparing metal carbides that involves citrate gel precursors and a non-hydrocarbon gas but does not use a hydrocarbon gas, does not form an oxide intermediate species and does not produce carbon monoxide. In some embodiments, the metal carbides are transition metal carbides.

This invention pertains to a composite of AlON and a germanate glass, and to a process for bonding AlON to the glass. The composite includes AlON and glass bonded together and having transmission in the visible and mid-infrared wavelength region. The process includes the step of heating them together above the softening temperature of the glass, the composite having excellent, i.e., typically in excess of about 60%, transmission in the 0.4-5 wavelength region.

A compound having the formula. Each R is methyl or phenyl; R2 comprises one or more of silane, siloxane, and aromatic groups; n is a nonnegative integer; and m is 1 or 2. The dashed bond is a single bond and the double dashed bond is a double bond, or the dashed bond is a double bond and the double dashed bond is a triple bond. A polymer made by a hydrosilation reaction of a polyhedral oligomeric silsesquioxane having pendant siloxane groups with an acetylene- and silicon-containing compound having at least two vinyl or ethynyl groups, and a crosslinked polymer thereof. The reaction occurs between the pendant siloxane groups and the vinyl or ethynyl groups.

Disclosed herein are the compounds shown below and methods of their synthesis. The value m is a positive integer. R comprises an alkyl chain or an alkoxy chain. Each X comprises a metal binding group. Each E is a methoxy group or comprises a biomolecule reactive group or a residue thereof. E optionally comprises a protecting group. The value n is a positive integer. The value p is zero or one. Y is OCH3, OH, NH2, or COOH.

A composite material formulated for slow release of a small molecule in seawater includes a porous inorganic oxide framework and micelles embedded within the pores of the framework. The micelles include a surfactant and a small molecule, the surfactant being present in the composite material at no more than 80 parts by weight per 100 parts by weight inorganic oxide, the composite material being stable in seawater for releasing the small molecule over at least 20 days.

A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.

A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.

The compound is a silane surface treatment agent and is useful for modifying the surfaces of silicon oxide and other metal oxides with hexafluorodimethyl carbinol functional groups. Additionally provided is a surface treatment procedure that effectively bonds it and other alkoxysilanes via homogeneous and heterogeneous amine catalysis onto metal oxide surfaces.

A method of: introducing hydrogen and a feed gas containing at least 50 vol % carbon dioxide into a reactor containing a Fischer-Tropsch catalyst; and heating the hydrogen and carbon dioxide to a temperature of at least about 190° C. to produce hydrocarbons in the reactor. An apparatus having: a reaction vessel for containing a Fischer-Tropsch catalyst, capable of heating gases to at least about 190° C.; a hydrogen delivery system feeding into the reaction vessel; a carbon dioxide delivery system for delivering a feed gas containing at least 50 vol % carbon dioxide feeding into the reaction vessel; and a trap for collecting hydrocarbons generated in the reaction vessel.

A composition having nanoparticles of a boron carbide and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising boron and an organic component. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining boron and an organic compound having a char yield of at least 60% by weight, and heating to form boron carbide or boron nitride nanoparticles.

A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 Å, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.

Disclosed herein is a composition having a thermoset polymer and a plurality of hollow microsphere homogenously dispersed in the composition. The polymer is a cyanate ester thermoset, a phthalonitrile thermoset, a crosslinked acetylene thermoset, or a hydrosilation thermoset. Also disclosed herein is a method of: providing a thermosetting compound; adding microspheres to the thermosetting compound; and mixing the thermosetting compound while initiating crosslinking of the thermosetting compound.

An article having: a nonconductive fiber and a RuO2 coating. A method of: immersing a nonconductive article in a solution of RuO4 and a nonpolar solvent at a temperature that is below the temperature at which RuO4 decomposes to RuO2 in the nonpolar solvent in the presence of the article; and warming the article and solution to ambient temperature under ambient conditions to cause the formation of a RuO2 coating on a portion of the article. An article having: a nonconductive fiber and a coating. The coating is made by electroless deposition, sputtering, atomic-layer deposition, chemical vapor deposition, or physical vapor deposition.

Monodisperse metal oxide nanopowders are prepared by treating a dispersion of crude metal oxide nanopowder with ultrasonication, allowing the dispersion to settle, and subjecting the remaining suspended portion to centrifugation to obtain a supernatant comprising metal oxide nanopowder.

A compound having the formula: Each R1 is C1-C3 alkyl group or fluoridated C1-C3 alkyl group. The value n is a positive integer. Each R2 is alkylene group or polyethylene glycol group. Y1 is hydrogen, quaternary ammonium containing group, or phenol-containing group. Y2 is quaternary ammonium-containing group or phenol-containing group. The quaternary ammonium-containing group is non-aromatic and contains no more than one quaternary ammonium.

This disclosure involves a new spinel and glass micro-composite material and process for making such. The composite has excellent transmission in the 0.5-5.0 μm wavelength region suitable for various visible and mid IR applications utilizing windows, domes and other geometric shapes. The composite can be made at a temperature about 40% lower than the glass melting temperature and about 50% lower than the spinel sintering temperature. The composite material has high modulus and fracture toughness which are important for impact resistance in armor and other practical applications.

A metron refers to a molecule which contains a pre-defined number of high affinity binding sites for metal ions. Metrons may be used to prepare homogenous populations of nanoparticles each composed of a same, specific number of atoms, wherein each particle has the same size ranging from 2 atoms to about ten nanometers.

A method for reducing graphene film thickness on a donor substrate and transferring graphene films from a donor substrate to a handle substrate includes applying a bonding material to the graphene on the donor substrate, releasing the bonding material from the donor substrate thereby leaving graphene on the bonding material, applying the bonding material with graphene onto the handle substrate, and releasing the bonding material from the handle substrate thereby leaving the graphene on the handle substrate. The donor substrate may comprise SiC, metal foil or other graphene growth substrate, and the handle substrate may comprise a semiconductor or insulator crystal, semiconductor device, epitaxial layer, flexible substrate, metal film, or organic device.

An LED device having plasmonically enhanced emission is provided. The device includes an inverted LED structure with a coating of metal nanoparticles on the surface chosen to match the plasmonic response to the peak emission from the active quantum well (QW) emission region of the LED. The active QW emission region is separated from the metal nanoparticles on the surface by a thin n-type contact layer disposed on a top side of the active QW emission. A p-type layer is disposed immediately beneath the active QW emission region and injects holes into the active QW emission region. The n-type contact layer is sufficiently thin to permit a coupling of the surface plasmons (SPs) from the metal nanoparticles and the excitons in the active QW emission region. The SP-exciton coupling provides an alternative decay route for the excitons and thus enhances the photon emission from the LED device.

A composition comprising india stabilized gadolinia wherein the india stabilized gadolinia is an oxide with a direct substitution of the indium ion for the gadolinia ion resulting in a compound with the formula InxGd2-xO3.

A composition having nanoparticles of a refractory-metal boride and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising a metal component, boron, and an organic component. The metal component is nanoparticles or particles of a refractory metal or a refractory-metal compound capable of decomposing into refractory metal nanoparticles. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining particles of a refractory metal or a refractory-metal compound capable of reacting or decomposing into refractory-metal nanoparticles, boron, and an organic compound having a char yield of at least 60% by weight to form a precursor mixture. A composition having nanoparticles of a refractory-metal boride that is not in the form of a powder.

A structure having: a molecule of carboxymethyl amylose (CMA) in a super-helical conformation; cyanine molecules on the exterior surface of the CMA arranged in a J-aggregate formation; and a chromophore molecule in the interior space of the CMA.