Transistor with diamond gate
NRL
A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN high-electron-mobility transistor (HEMT). The diamond gate electrode is formed so that it directly contacts the barrier layer. In some embodiments, the diamond gate electrode is formed from boron-doped nanocrystalline diamond (NCD), while in other embodiments, the diamond gate electrode is formed from single crystal diamond.
Inventors:
Koehler, Andrew D.; Anderson, Travis J.; Tadjer, Marko J.; Hobart, Karl D.; Feygelson, Tatyana I.
Patent Number:
Technical domain:
Materials and Coatings
FIle Date:
2016-03-25
Grant Date:
2016-10-11
Grant time:
200 days
Grant time percentile rank:
3
Claim count percentile rank:
2
Citations percentile rank:
1
'Cited by' percentile rank:
1
Assignee:
US NAVY
