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Low-dimensional material chemical vapor sensors

Patent image
NRL

A method of making a low-dimensional material chemical vapor sensor comprising exfoliating MoS2, applying the monolayer flakes of MoS2 onto a SiO2/Si wafer, applying a methylmethacrylate (MMA)/polymethylmethacrylate (PMMA) film, defining trenches for the deposition of metal contacts, and depositing one of Ti/Au, Au, and Pt in the trench and resulting in a MoS2 sensor. A low-dimensional material chemical vapor sensor comprising monolayer flakes of MoS2, trenches in the SiO2/Si wafer, metal contacts in the trenches, and thereby resulting in a MoS2 sensor. A full spectrum sensing suite comprising similarly fabricated parallel sensors made from a variety of low-dimensional materials including graphene, carbon nanotubes, MoS2, BN, and the family of transition metal dichalcogenides. The sensing suites are small, robust, sensitive, low-power, inexpensive, and fast in their response to chemical vapor analytes.

Inventors: 
Friedman, Adam L.; Perkins, Keith F.; Cobas, Enrique; Campbell, Paul M.; Jernigan, Glenn G.; Jonker, Berend T.
Patent Number: 
Technical domain: 
Sensors and Measurement
FIle Date: 
2013-11-08
Grant Date: 
2015-06-23
Grant time: 
592 days
Grant time percentile rank: 
10
Claim count percentile rank: 
3
Citations percentile rank: 
1
'Cited by' percentile rank: 
1
Assignee: 
US NAVY