Strained InGaAs quantum wells for complementary transistors
NRL
An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.
Inventors:
Bennett, Brian R.; Boos, John Bradley; Chick, Theresa F.; Champlain, James G.
Patent Number:
Technical domain:
Materials and Coatings
FIle Date:
2014-10-02
Grant Date:
2015-06-09
Grant time:
250 days
Grant time percentile rank:
4
Claim count percentile rank:
3
Citations percentile rank:
1
'Cited by' percentile rank:
1
Assignee:
US NAVY
