Transistor with enhanced channel charge inducing material layer and threshold voltage control
NRL
High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.
Inventors:
Kub, Francis J.; Anderson, Travis; Hobart, Karl D.; Mastro, Michael A.; Eddy Jr., Charles R.
Patent Number:
Technical domain:
Materials and Coatings
FIle Date:
2014-01-28
Grant Date:
2014-12-02
Grant time:
308 days
Grant time percentile rank:
5
Claim count percentile rank:
2
Citations percentile rank:
1
'Cited by' percentile rank:
1
Assignee:
US NAVY
